JPH0526294B2 - - Google Patents

Info

Publication number
JPH0526294B2
JPH0526294B2 JP61229969A JP22996986A JPH0526294B2 JP H0526294 B2 JPH0526294 B2 JP H0526294B2 JP 61229969 A JP61229969 A JP 61229969A JP 22996986 A JP22996986 A JP 22996986A JP H0526294 B2 JPH0526294 B2 JP H0526294B2
Authority
JP
Japan
Prior art keywords
primary particle
particle beam
ion
scanning
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61229969A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6386340A (ja
Inventor
Haruhisa Mori
Tadayuki Kojima
Satoshi Hasui
Hiroshi Oomori
Shuji Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Fujitsu Ltd
Original Assignee
Tokyo Electron Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Fujitsu Ltd filed Critical Tokyo Electron Ltd
Priority to JP61229969A priority Critical patent/JPS6386340A/ja
Priority to US07/102,448 priority patent/US4785188A/en
Priority to DE8787402184T priority patent/DE3771982D1/de
Priority to EP87402184A priority patent/EP0263032B1/en
Priority to KR1019870010878A priority patent/KR910007835B1/ko
Publication of JPS6386340A publication Critical patent/JPS6386340A/ja
Publication of JPH0526294B2 publication Critical patent/JPH0526294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P30/20—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP61229969A 1986-09-30 1986-09-30 一次粒子線照射装置 Granted JPS6386340A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61229969A JPS6386340A (ja) 1986-09-30 1986-09-30 一次粒子線照射装置
US07/102,448 US4785188A (en) 1986-09-30 1987-09-29 Primary particle beam irradiation apparatus and method of irradiation thereof
DE8787402184T DE3771982D1 (de) 1986-09-30 1987-09-30 Primaer-teilchen-bestrahlungsvorrichtung und verfahren zur bestrahlung derselben.
EP87402184A EP0263032B1 (en) 1986-09-30 1987-09-30 Primary particle beam irradiation apparatus and method of irradiation thereof
KR1019870010878A KR910007835B1 (ko) 1986-09-30 1987-09-30 1차입자 비임 조사장치 및 그의 조사방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61229969A JPS6386340A (ja) 1986-09-30 1986-09-30 一次粒子線照射装置

Publications (2)

Publication Number Publication Date
JPS6386340A JPS6386340A (ja) 1988-04-16
JPH0526294B2 true JPH0526294B2 (OSRAM) 1993-04-15

Family

ID=16900545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61229969A Granted JPS6386340A (ja) 1986-09-30 1986-09-30 一次粒子線照射装置

Country Status (5)

Country Link
US (1) US4785188A (OSRAM)
EP (1) EP0263032B1 (OSRAM)
JP (1) JPS6386340A (OSRAM)
KR (1) KR910007835B1 (OSRAM)
DE (1) DE3771982D1 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9000822A (nl) * 1990-04-09 1991-11-01 Philips Nv Werkwijze voor bestraling van een object met een geladen deeltjesbundel en inrichting voor uitvoering van de werkwijze.
JP2648642B2 (ja) * 1990-04-17 1997-09-03 アプライド マテリアルズ インコーポレイテッド 巾広ビームでイオンインプランテーションを行なう方法及び装置
JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5859437A (en) * 1997-03-17 1999-01-12 Taiwan Semiconductor Manufacturing Corporation Intelligent supervision system with expert system for ion implantation process
US6519018B1 (en) 1998-11-03 2003-02-11 International Business Machines Corporation Vertically aligned liquid crystal displays and methods for their production
US6061115A (en) * 1998-11-03 2000-05-09 International Business Machines Incorporation Method of producing a multi-domain alignment layer by bombarding ions of normal incidence
US6313896B1 (en) 1999-08-31 2001-11-06 International Business Machines Corporation Method for forming a multi-domain alignment layer for a liquid crystal display device
US7358484B2 (en) * 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating
US20100086711A1 (en) * 2007-02-14 2010-04-08 Asahi Kasei Chemicals Corporation Stretched laminated film and bag
US8378317B1 (en) * 2011-09-07 2013-02-19 Gtat Corporation Ion implant apparatus and method of ion implantation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585397A (en) * 1968-10-04 1971-06-15 Hughes Aircraft Co Programmed fine ion implantation beam system
JPS55124936A (en) * 1979-03-22 1980-09-26 Hitachi Ltd Control method of beam current in ion drive
JPS57123639A (en) * 1981-01-23 1982-08-02 Agency Of Ind Science & Technol Method for monitoring ion current for ion implantation apparatus
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS599843A (ja) * 1982-07-07 1984-01-19 Akashi Seisakusho Co Ltd 走査型電子顕微鏡およびその類似装置における２次荷電粒子検出装置
US4539217A (en) * 1984-06-27 1985-09-03 Eaton Corporation Dose control method
JPS6139356A (ja) * 1984-07-30 1986-02-25 Hitachi Ltd イオン打込装置

Also Published As

Publication number Publication date
EP0263032B1 (en) 1991-08-07
DE3771982D1 (de) 1991-09-12
KR880004550A (ko) 1988-06-04
JPS6386340A (ja) 1988-04-16
US4785188A (en) 1988-11-15
EP0263032A1 (en) 1988-04-06
KR910007835B1 (ko) 1991-10-02

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