JPS55124936A - Control method of beam current in ion drive - Google Patents

Control method of beam current in ion drive

Info

Publication number
JPS55124936A
JPS55124936A JP3229679A JP3229679A JPS55124936A JP S55124936 A JPS55124936 A JP S55124936A JP 3229679 A JP3229679 A JP 3229679A JP 3229679 A JP3229679 A JP 3229679A JP S55124936 A JPS55124936 A JP S55124936A
Authority
JP
Japan
Prior art keywords
beam current
disk
center
arithmetic circuit
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3229679A
Other languages
Japanese (ja)
Inventor
Seiichi Yamada
Kiyoshi Yoshida
Masayuki Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3229679A priority Critical patent/JPS55124936A/en
Publication of JPS55124936A publication Critical patent/JPS55124936A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To control a beam current in such a manner as to be uniformly driven into a wafer of processing the beam current, by changing a relatively moving speed between the center of a disk and the beam position in accordance with a change of the beam current value detected from the processed disk side. CONSTITUTION:A beam current I taken out from a rotary disk 9 by the beam current detecting circuit and a preset value K from beam current setting switch 13 are calculated in an arithmetic circuit 21 to obtain a result of A=KI, being input to an arithmetic circuit 22. While a distance R, from the rotating center to the center of gravity of the beam current, detected by an up and down feed position linear encoder 23 is input to the arithmetic circuit 22 through a counter 24, calculating a result of VR=A/R. This value VR is given to a pulse motor 19 through a converter 25 and a pulse motor drive circuit 26, thus controlling a speed of up and down feeding of the rotating disk.
JP3229679A 1979-03-22 1979-03-22 Control method of beam current in ion drive Pending JPS55124936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3229679A JPS55124936A (en) 1979-03-22 1979-03-22 Control method of beam current in ion drive

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3229679A JPS55124936A (en) 1979-03-22 1979-03-22 Control method of beam current in ion drive

Publications (1)

Publication Number Publication Date
JPS55124936A true JPS55124936A (en) 1980-09-26

Family

ID=12354985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3229679A Pending JPS55124936A (en) 1979-03-22 1979-03-22 Control method of beam current in ion drive

Country Status (1)

Country Link
JP (1) JPS55124936A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160427A (en) * 1979-05-23 1980-12-13 Nova Ass Inc Beam machining apparatus
US4785188A (en) * 1986-09-30 1988-11-15 Fujitsu Limited Primary particle beam irradiation apparatus and method of irradiation thereof
JPH01500310A (en) * 1986-04-09 1989-02-02 イクリプス・イオン・テクノロジー・インコーポレイテッド Ion beam scanning method and device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778626A (en) * 1972-07-28 1973-12-11 Western Electric Co Mechanical scan system for ion implantation
JPS52147073A (en) * 1976-06-02 1977-12-07 Hitachi Ltd Ion implantation apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778626A (en) * 1972-07-28 1973-12-11 Western Electric Co Mechanical scan system for ion implantation
JPS52147073A (en) * 1976-06-02 1977-12-07 Hitachi Ltd Ion implantation apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160427A (en) * 1979-05-23 1980-12-13 Nova Ass Inc Beam machining apparatus
JPH0351050B2 (en) * 1979-05-23 1991-08-05 Noba Asosheitsu Inc
JPH01500310A (en) * 1986-04-09 1989-02-02 イクリプス・イオン・テクノロジー・インコーポレイテッド Ion beam scanning method and device
US4785188A (en) * 1986-09-30 1988-11-15 Fujitsu Limited Primary particle beam irradiation apparatus and method of irradiation thereof

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