JPH0525389B2 - - Google Patents

Info

Publication number
JPH0525389B2
JPH0525389B2 JP63218664A JP21866488A JPH0525389B2 JP H0525389 B2 JPH0525389 B2 JP H0525389B2 JP 63218664 A JP63218664 A JP 63218664A JP 21866488 A JP21866488 A JP 21866488A JP H0525389 B2 JPH0525389 B2 JP H0525389B2
Authority
JP
Japan
Prior art keywords
layer
region
base
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63218664A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6472562A (en
Inventor
Emu Runarudei Reda
Jei Maritsuku Rojaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of JPS6472562A publication Critical patent/JPS6472562A/ja
Publication of JPH0525389B2 publication Critical patent/JPH0525389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/841—Vertical heterojunction BJTs having a two-dimensional base, e.g. modulation-doped base, inversion layer base or delta-doped base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Bipolar Transistors (AREA)
JP63218664A 1987-09-04 1988-09-02 Transistor Granted JPS6472562A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/094,633 US4825265A (en) 1987-09-04 1987-09-04 Transistor

Publications (2)

Publication Number Publication Date
JPS6472562A JPS6472562A (en) 1989-03-17
JPH0525389B2 true JPH0525389B2 (en:Method) 1993-04-12

Family

ID=22246275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63218664A Granted JPS6472562A (en) 1987-09-04 1988-09-02 Transistor

Country Status (5)

Country Link
US (1) US4825265A (en:Method)
EP (1) EP0306258B1 (en:Method)
JP (1) JPS6472562A (en:Method)
CA (1) CA1286799C (en:Method)
DE (1) DE3887716T2 (en:Method)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63276267A (ja) * 1987-05-08 1988-11-14 Fujitsu Ltd 半導体装置の製造方法
US4967254A (en) * 1987-07-16 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
CA1303754C (en) * 1988-09-07 1992-06-16 American Telephone And Telegraph Company Bipolar hot electron transistor
US5206524A (en) * 1988-09-28 1993-04-27 At&T Bell Laboratories Heterostructure bipolar transistor
US5164218A (en) * 1989-05-12 1992-11-17 Nippon Soken, Inc. Semiconductor device and a method for producing the same
US5106766A (en) * 1989-07-11 1992-04-21 At&T Bell Laboratories Method of making a semiconductor device that comprises p-type III-V semiconductor material
US5001534A (en) * 1989-07-11 1991-03-19 At&T Bell Laboratories Heterojunction bipolar transistor
US5077597A (en) * 1990-08-17 1991-12-31 North Carolina State University Microelectronic electron emitter
JP3130545B2 (ja) * 1991-03-06 2001-01-31 株式会社東芝 半導体装置および半導体装置の製造方法
US5162243A (en) * 1991-08-30 1992-11-10 Trw Inc. Method of producing high reliability heterojunction bipolar transistors
US5286997A (en) * 1992-03-31 1994-02-15 Texas Instruments Incorporated Method for forming an isolated, low resistance epitaxial subcollector for bipolar transistors
US5448087A (en) * 1992-04-30 1995-09-05 Trw Inc. Heterojunction bipolar transistor with graded base doping
US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors
US5700701A (en) * 1992-10-30 1997-12-23 Texas Instruments Incorporated Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors
US5716859A (en) * 1995-12-22 1998-02-10 The Whitaker Corporation Method of fabricating a silicon BJT
JP3087671B2 (ja) * 1996-12-12 2000-09-11 日本電気株式会社 バイポーラトランジスタおよびその製造方法
DE19944925B4 (de) * 1999-09-13 2010-11-25 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung
EP2202784B1 (en) * 2008-12-29 2017-10-25 Imec Method for manufacturing a junction

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
US4410902A (en) * 1981-03-23 1983-10-18 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier semiconductor device
DE3572752D1 (en) * 1984-09-21 1989-10-05 American Telephone & Telegraph A novel semiconductor device
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
JPS61276261A (ja) * 1985-05-30 1986-12-06 Fujitsu Ltd 高速バイポ−ラトランジスタの製造方法

Also Published As

Publication number Publication date
EP0306258A3 (en) 1989-10-18
DE3887716D1 (de) 1994-03-24
US4825265A (en) 1989-04-25
EP0306258B1 (en) 1994-02-09
EP0306258A2 (en) 1989-03-08
CA1286799C (en) 1991-07-23
DE3887716T2 (de) 1994-05-19
JPS6472562A (en) 1989-03-17

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