JPH0525232Y2 - - Google Patents

Info

Publication number

JPH0525232Y2

JPH0525232Y2 JP2316587U JP2316587U JPH0525232Y2 JP H0525232 Y2 JPH0525232 Y2 JP H0525232Y2 JP 2316587 U JP2316587 U JP 2316587U JP 2316587 U JP2316587 U JP 2316587U JP H0525232 Y2 JPH0525232 Y2 JP H0525232Y2

Authority

JP

Japan

Prior art keywords

element isolation

isolation region

region

diffusion layer

base

Prior art date

1987-02-18

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

Links

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• 238000002955 isolation Methods 0.000 claims description 24
• 238000009792 diffusion process Methods 0.000 claims description 20
• 239000004065 semiconductor Substances 0.000 claims description 18
• 239000010410 layer Substances 0.000 description 26
• 230000003071 parasitic effect Effects 0.000 description 12
• 230000005611 electricity Effects 0.000 description 4
• 230000003068 static effect Effects 0.000 description 4
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
• 230000006378 damage Effects 0.000 description 3
• 229910052710 silicon Inorganic materials 0.000 description 3
• 239000010703 silicon Substances 0.000 description 3
• 239000000758 substrate Substances 0.000 description 3
• 239000011229 interlayer Substances 0.000 description 2
• WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 2
• 230000000694 effects Effects 0.000 description 1
• 238000000605 extraction Methods 0.000 description 1
• 239000012535 impurity Substances 0.000 description 1
• 230000010354 integration Effects 0.000 description 1
• 238000000034 method Methods 0.000 description 1