JPH05251819A - 電子ビーム蒸着多層ミラーを有する光デバイス - Google Patents
電子ビーム蒸着多層ミラーを有する光デバイスInfo
- Publication number
- JPH05251819A JPH05251819A JP4341862A JP34186292A JPH05251819A JP H05251819 A JPH05251819 A JP H05251819A JP 4341862 A JP4341862 A JP 4341862A JP 34186292 A JP34186292 A JP 34186292A JP H05251819 A JPH05251819 A JP H05251819A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- index layer
- refractive index
- optical device
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000005388 borosilicate glass Substances 0.000 claims description 29
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims 2
- 238000000313 electron-beam-induced deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000005368 silicate glass Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 20
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 101150093988 maf-2 gene Proteins 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 114
- 230000008021 deposition Effects 0.000 description 19
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- -1 H + Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 101150117735 sel-10 gene Proteins 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US815311 | 1991-12-27 | ||
| US07/815,311 US5206871A (en) | 1991-12-27 | 1991-12-27 | Optical devices with electron-beam evaporated multilayer mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05251819A true JPH05251819A (ja) | 1993-09-28 |
Family
ID=25217423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4341862A Pending JPH05251819A (ja) | 1991-12-27 | 1992-12-22 | 電子ビーム蒸着多層ミラーを有する光デバイス |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5206871A (en, 2012) |
| EP (1) | EP0549167B1 (en, 2012) |
| JP (1) | JPH05251819A (en, 2012) |
| KR (1) | KR0147857B1 (en, 2012) |
| CA (1) | CA2083122C (en, 2012) |
| DE (1) | DE69209630T2 (en, 2012) |
| HK (1) | HK146096A (en, 2012) |
| TW (1) | TW263626B (en, 2012) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08181391A (ja) * | 1994-10-24 | 1996-07-12 | Nec Corp | 面発光レーザ及び面発光レーザアレイ及び光情報処理装置 |
| JPH0945963A (ja) * | 1995-07-31 | 1997-02-14 | Eiko Eng:Kk | ＧａＮ系半導体装置 |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5408105A (en) * | 1992-02-19 | 1995-04-18 | Matsushita Electric Industrial Co., Ltd. | Optoelectronic semiconductor device with mesa |
| US5258316A (en) * | 1992-03-26 | 1993-11-02 | Motorola, Inc. | Patterened mirror vertical cavity surface emitting laser |
| US5256596A (en) * | 1992-03-26 | 1993-10-26 | Motorola, Inc. | Top emitting VCSEL with implant |
| US5513202A (en) * | 1994-02-25 | 1996-04-30 | Matsushita Electric Industrial Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser |
| US5557626A (en) * | 1994-06-15 | 1996-09-17 | Motorola | Patterned mirror VCSEL with adjustable selective etch region |
| US5654228A (en) * | 1995-03-17 | 1997-08-05 | Motorola | VCSEL having a self-aligned heat sink and method of making |
| EP0784363B1 (en) * | 1995-12-26 | 2000-10-11 | Nippon Telegraph and Telephone Corporation | Vertical-cavity surface-emitting laser and method for manufacturing the same |
| US6044100A (en) * | 1997-12-23 | 2000-03-28 | Lucent Technologies Inc. | Lateral injection VCSEL |
| US6169756B1 (en) * | 1997-12-23 | 2001-01-02 | Lucent Technologies Inc. | Vertical cavity surface-emitting laser with optical guide and current aperture |
| US6208680B1 (en) | 1997-12-23 | 2001-03-27 | Lucent Technologies Inc. | Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors |
| US5960024A (en) | 1998-03-30 | 1999-09-28 | Bandwidth Unlimited, Inc. | Vertical optical cavities produced with selective area epitaxy |
| US6117699A (en) * | 1998-04-10 | 2000-09-12 | Hewlett-Packard Company | Monolithic multiple wavelength VCSEL array |
| US6493372B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
| US6760357B1 (en) | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
| US6487231B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
| US6493373B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
| US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
| US6493371B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth9, Inc. | Vertical cavity apparatus with tunnel junction |
| US5991326A (en) | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
| US6535541B1 (en) | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
| US6226425B1 (en) | 1999-02-24 | 2001-05-01 | Bandwidth9 | Flexible optical multiplexer |
| US6233263B1 (en) | 1999-06-04 | 2001-05-15 | Bandwidth9 | Monitoring and control assembly for wavelength stabilized optical system |
| US6275513B1 (en) | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
| US6614821B1 (en) * | 1999-08-04 | 2003-09-02 | Ricoh Company, Ltd. | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
| US6577658B1 (en) * | 1999-09-20 | 2003-06-10 | E20 Corporation, Inc. | Method and apparatus for planar index guided vertical cavity surface emitting lasers |
| NL1015714C2 (nl) * | 2000-07-14 | 2002-01-15 | Dsm Nv | Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur. |
| US6724796B2 (en) * | 2000-12-06 | 2004-04-20 | Applied Optoelectronics, Inc. | Modified distributed bragg reflector (DBR) for vertical cavity surface-emitting laser (VCSEL) resonant wavelength tuning sensitivity control |
| US6696307B2 (en) | 2000-12-06 | 2004-02-24 | Applied Optoelectronics, Inc. | Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays |
| US6636544B2 (en) | 2000-12-06 | 2003-10-21 | Applied Optoelectronics, Inc. | Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays |
| EP1298461A1 (en) * | 2001-09-27 | 2003-04-02 | Interuniversitair Microelektronica Centrum Vzw | Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR |
| DE10208171A1 (de) * | 2002-02-26 | 2003-09-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür |
| US6897131B2 (en) * | 2002-09-20 | 2005-05-24 | Applied Materials, Inc. | Advances in spike anneal processes for ultra shallow junctions |
| DE10244447B4 (de) * | 2002-09-24 | 2006-06-14 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür |
| US6839507B2 (en) * | 2002-10-07 | 2005-01-04 | Applied Materials, Inc. | Black reflector plate |
| US7126160B2 (en) * | 2004-06-18 | 2006-10-24 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
| US7119377B2 (en) * | 2004-06-18 | 2006-10-10 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
| US7627017B2 (en) * | 2006-08-25 | 2009-12-01 | Stc. Unm | Laser amplifier and method of making the same |
| US7483212B2 (en) * | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
| CN110212409A (zh) * | 2019-05-31 | 2019-09-06 | 度亘激光技术（苏州）有限公司 | 基于GaAs衬底的分布布拉格反射镜的制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1382401A (en) * | 1973-02-13 | 1975-01-29 | Inst Poluprovodnikov | Solid state laser |
| US3984581A (en) * | 1973-02-28 | 1976-10-05 | Carl Zeiss-Stiftung | Method for the production of anti-reflection coatings on optical elements made of transparent organic polymers |
| JPS6179280A (ja) * | 1984-09-27 | 1986-04-22 | Agency Of Ind Science & Technol | 面発光型半導体レ−ザ装置及びその製造方法 |
| JPS63245984A (ja) * | 1987-04-01 | 1988-10-13 | Seiko Epson Corp | 半導体発光素子及びその製造方法 |
| US5018157A (en) * | 1990-01-30 | 1991-05-21 | At&T Bell Laboratories | Vertical cavity semiconductor lasers |
| US5068868A (en) * | 1990-05-21 | 1991-11-26 | At&T Bell Laboratories | Vertical cavity surface emitting lasers with electrically conducting mirrors |
-
1991
- 1991-12-27 US US07/815,311 patent/US5206871A/en not_active Expired - Lifetime
-
1992
- 1992-05-26 TW TW081104103A patent/TW263626B/zh active
- 1992-11-17 CA CA002083122A patent/CA2083122C/en not_active Expired - Fee Related
- 1992-12-04 EP EP92311091A patent/EP0549167B1/en not_active Expired - Lifetime
- 1992-12-04 DE DE69209630T patent/DE69209630T2/de not_active Expired - Fee Related
- 1992-12-22 JP JP4341862A patent/JPH05251819A/ja active Pending
- 1992-12-24 KR KR1019920025378A patent/KR0147857B1/ko not_active Expired - Fee Related
-
1996
- 1996-08-01 HK HK146096A patent/HK146096A/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08181391A (ja) * | 1994-10-24 | 1996-07-12 | Nec Corp | 面発光レーザ及び面発光レーザアレイ及び光情報処理装置 |
| JPH0945963A (ja) * | 1995-07-31 | 1997-02-14 | Eiko Eng:Kk | ＧａＮ系半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| HK146096A (en) | 1996-08-09 |
| KR0147857B1 (ko) | 1998-11-02 |
| EP0549167B1 (en) | 1996-04-03 |
| EP0549167A2 (en) | 1993-06-30 |
| DE69209630D1 (de) | 1996-05-09 |
| DE69209630T2 (de) | 1996-08-22 |
| US5206871A (en) | 1993-04-27 |
| TW263626B (en, 2012) | 1995-11-21 |
| CA2083122A1 (en) | 1993-06-28 |
| EP0549167A3 (en) | 1993-08-25 |
| KR930015234A (ko) | 1993-07-24 |
| CA2083122C (en) | 1997-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20011210 |