JPH0524673B2 - - Google Patents

Info

Publication number
JPH0524673B2
JPH0524673B2 JP58191039A JP19103983A JPH0524673B2 JP H0524673 B2 JPH0524673 B2 JP H0524673B2 JP 58191039 A JP58191039 A JP 58191039A JP 19103983 A JP19103983 A JP 19103983A JP H0524673 B2 JPH0524673 B2 JP H0524673B2
Authority
JP
Japan
Prior art keywords
memory cell
capacitor
volatile memory
transistor
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58191039A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6083374A (ja
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58191039A priority Critical patent/JPS6083374A/ja
Priority to US06/659,191 priority patent/US4630238A/en
Priority to DE8484306978T priority patent/DE3486094T2/de
Priority to EP84306978A priority patent/EP0147019B1/en
Priority to EP91121355A priority patent/EP0481532B1/en
Priority to DE3486418T priority patent/DE3486418T2/de
Priority to KR8406376A priority patent/KR900006190B1/ko
Publication of JPS6083374A publication Critical patent/JPS6083374A/ja
Publication of JPH0524673B2 publication Critical patent/JPH0524673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP58191039A 1983-10-14 1983-10-14 半導体記憶装置 Granted JPS6083374A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP58191039A JPS6083374A (ja) 1983-10-14 1983-10-14 半導体記憶装置
US06/659,191 US4630238A (en) 1983-10-14 1984-10-09 Semiconductor memory device
DE8484306978T DE3486094T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung.
EP84306978A EP0147019B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
EP91121355A EP0481532B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
DE3486418T DE3486418T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung
KR8406376A KR900006190B1 (en) 1983-10-14 1984-10-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58191039A JPS6083374A (ja) 1983-10-14 1983-10-14 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6083374A JPS6083374A (ja) 1985-05-11
JPH0524673B2 true JPH0524673B2 (enrdf_load_stackoverflow) 1993-04-08

Family

ID=16267868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58191039A Granted JPS6083374A (ja) 1983-10-14 1983-10-14 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6083374A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217493A (ja) * 1986-02-27 1987-09-24 Fujitsu Ltd 半導体不揮発性記憶装置
JPS62256296A (ja) * 1986-04-30 1987-11-07 Fujitsu Ltd 半導体不揮発性記憶装置
US4787066A (en) * 1987-08-03 1988-11-22 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with improved level shifting circuit and reduced tunnel device count for improved reliability

Also Published As

Publication number Publication date
JPS6083374A (ja) 1985-05-11

Similar Documents

Publication Publication Date Title
US4510584A (en) MOS Random access memory cell with nonvolatile storage
JPS61246995A (ja) 不揮発性ランダムアクセスメモリ装置
US4420821A (en) Static RAM with non-volatile back-up storage and method of operation thereof
US4630238A (en) Semiconductor memory device
JP2002529885A (ja) メモリセル装置
JPH0115959B2 (enrdf_load_stackoverflow)
US4037243A (en) Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data
JP3039245B2 (ja) 半導体メモリ装置
JPS63237288A (ja) メモリ装置
JPH07302847A (ja) Ｓｒａｍメモリセル
JPH06104405A (ja) スタティック型メモリ
JPH0524673B2 (enrdf_load_stackoverflow)
JPS5922317B2 (ja) 半導体メモリ
JPH0415556B2 (enrdf_load_stackoverflow)
JPH039560B2 (enrdf_load_stackoverflow)
JPH01128563A (ja) 半導体記憶装置
JPH039559B2 (enrdf_load_stackoverflow)
JPH031759B2 (enrdf_load_stackoverflow)
JPH04253375A (ja) 不揮発性半導体記憶装置およびその製造方法
JPH0379800B2 (enrdf_load_stackoverflow)
JP2702798B2 (ja) 半導体記憶装置
JPS6365674A (ja) 半導体不揮発性ｒａｍ
JPH0590540A (ja) 半導体記憶装置
JPH045271B2 (enrdf_load_stackoverflow)
JP2679718B2 (ja) フローティングゲート型電界効果トランジスタを使用したメモリ回路