JPS6083374A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6083374A
JPS6083374A JP58191039A JP19103983A JPS6083374A JP S6083374 A JPS6083374 A JP S6083374A JP 58191039 A JP58191039 A JP 58191039A JP 19103983 A JP19103983 A JP 19103983A JP S6083374 A JPS6083374 A JP S6083374A
Authority
JP
Japan
Prior art keywords
memory cell
capacitor
volatile memory
transistor
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58191039A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0524673B2 (enrdf_load_stackoverflow
Inventor
Hideki Arakawa
秀貴 荒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58191039A priority Critical patent/JPS6083374A/ja
Priority to US06/659,191 priority patent/US4630238A/en
Priority to EP84306978A priority patent/EP0147019B1/en
Priority to EP91121355A priority patent/EP0481532B1/en
Priority to DE8484306978T priority patent/DE3486094T2/de
Priority to DE3486418T priority patent/DE3486418T2/de
Priority to KR8406376A priority patent/KR900006190B1/ko
Publication of JPS6083374A publication Critical patent/JPS6083374A/ja
Publication of JPH0524673B2 publication Critical patent/JPH0524673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP58191039A 1983-10-14 1983-10-14 半導体記憶装置 Granted JPS6083374A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP58191039A JPS6083374A (ja) 1983-10-14 1983-10-14 半導体記憶装置
US06/659,191 US4630238A (en) 1983-10-14 1984-10-09 Semiconductor memory device
EP84306978A EP0147019B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
EP91121355A EP0481532B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
DE8484306978T DE3486094T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung.
DE3486418T DE3486418T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung
KR8406376A KR900006190B1 (en) 1983-10-14 1984-10-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58191039A JPS6083374A (ja) 1983-10-14 1983-10-14 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6083374A true JPS6083374A (ja) 1985-05-11
JPH0524673B2 JPH0524673B2 (enrdf_load_stackoverflow) 1993-04-08

Family

ID=16267868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58191039A Granted JPS6083374A (ja) 1983-10-14 1983-10-14 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6083374A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217493A (ja) * 1986-02-27 1987-09-24 Fujitsu Ltd 半導体不揮発性記憶装置
US4800533A (en) * 1986-04-30 1989-01-24 Fujitsu Limited Semiconductor nonvolatile memory device
JPH01112595A (ja) * 1987-08-03 1989-05-01 Sgs Thomson Microelectron Inc 不揮発性シャドウ・メモリセル

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217493A (ja) * 1986-02-27 1987-09-24 Fujitsu Ltd 半導体不揮発性記憶装置
US4800533A (en) * 1986-04-30 1989-01-24 Fujitsu Limited Semiconductor nonvolatile memory device
JPH01112595A (ja) * 1987-08-03 1989-05-01 Sgs Thomson Microelectron Inc 不揮発性シャドウ・メモリセル

Also Published As

Publication number Publication date
JPH0524673B2 (enrdf_load_stackoverflow) 1993-04-08

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