JPH0524673B2 - - Google Patents
Info
- Publication number
- JPH0524673B2 JPH0524673B2 JP58191039A JP19103983A JPH0524673B2 JP H0524673 B2 JPH0524673 B2 JP H0524673B2 JP 58191039 A JP58191039 A JP 58191039A JP 19103983 A JP19103983 A JP 19103983A JP H0524673 B2 JPH0524673 B2 JP H0524673B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- capacitor
- volatile memory
- transistor
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 148
- 238000007667 floating Methods 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 32
- 230000000694 effects Effects 0.000 claims description 8
- 230000003068 static effect Effects 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 3
- 101000986989 Naja kaouthia Acidic phospholipase A2 CM-II Proteins 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58191039A JPS6083374A (ja) | 1983-10-14 | 1983-10-14 | 半導体記憶装置 |
US06/659,191 US4630238A (en) | 1983-10-14 | 1984-10-09 | Semiconductor memory device |
EP91121355A EP0481532B1 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
DE8484306978T DE3486094T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung. |
EP84306978A EP0147019B1 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
DE3486418T DE3486418T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
KR8406376A KR900006190B1 (en) | 1983-10-14 | 1984-10-13 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58191039A JPS6083374A (ja) | 1983-10-14 | 1983-10-14 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6083374A JPS6083374A (ja) | 1985-05-11 |
JPH0524673B2 true JPH0524673B2 (de) | 1993-04-08 |
Family
ID=16267868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58191039A Granted JPS6083374A (ja) | 1983-10-14 | 1983-10-14 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6083374A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62217493A (ja) * | 1986-02-27 | 1987-09-24 | Fujitsu Ltd | 半導体不揮発性記憶装置 |
JPS62256296A (ja) * | 1986-04-30 | 1987-11-07 | Fujitsu Ltd | 半導体不揮発性記憶装置 |
US4787066A (en) * | 1987-08-03 | 1988-11-22 | Sgs-Thomson Microelectronics, Inc. | Non-volatile shadow storage cell with improved level shifting circuit and reduced tunnel device count for improved reliability |
-
1983
- 1983-10-14 JP JP58191039A patent/JPS6083374A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6083374A (ja) | 1985-05-11 |
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