JPH031759B2 - - Google Patents
Info
- Publication number
- JPH031759B2 JPH031759B2 JP59038827A JP3882784A JPH031759B2 JP H031759 B2 JPH031759 B2 JP H031759B2 JP 59038827 A JP59038827 A JP 59038827A JP 3882784 A JP3882784 A JP 3882784A JP H031759 B2 JPH031759 B2 JP H031759B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- transistor
- gate
- section
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 39
- 230000000694 effects Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 2
- 230000003068 static effect Effects 0.000 description 15
- 230000010354 integration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59038827A JPS60185294A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
| US06/659,191 US4630238A (en) | 1983-10-14 | 1984-10-09 | Semiconductor memory device |
| EP91121355A EP0481532B1 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
| EP84306978A EP0147019B1 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
| DE3486418T DE3486418T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
| DE8484306978T DE3486094T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung. |
| KR8406376A KR900006190B1 (en) | 1983-10-14 | 1984-10-13 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59038827A JPS60185294A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60185294A JPS60185294A (ja) | 1985-09-20 |
| JPH031759B2 true JPH031759B2 (de) | 1991-01-11 |
Family
ID=12536062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59038827A Granted JPS60185294A (ja) | 1983-10-14 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60185294A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62256296A (ja) * | 1986-04-30 | 1987-11-07 | Fujitsu Ltd | 半導体不揮発性記憶装置 |
| JPH0227593A (ja) * | 1988-07-14 | 1990-01-30 | Sharp Corp | 半導体記憶装置 |
| JPH07111836B2 (ja) * | 1988-08-05 | 1995-11-29 | セイコー電子工業株式会社 | 半導体不揮発性記憶装置およびその動作方法 |
-
1984
- 1984-03-02 JP JP59038827A patent/JPS60185294A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60185294A (ja) | 1985-09-20 |
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