JPH0524591B2 - - Google Patents
Info
- Publication number
- JPH0524591B2 JPH0524591B2 JP2064712A JP6471290A JPH0524591B2 JP H0524591 B2 JPH0524591 B2 JP H0524591B2 JP 2064712 A JP2064712 A JP 2064712A JP 6471290 A JP6471290 A JP 6471290A JP H0524591 B2 JPH0524591 B2 JP H0524591B2
- Authority
- JP
- Japan
- Prior art keywords
- data
- write
- buffer
- writing
- batch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000872 buffer Substances 0.000 description 56
- 238000010586 diagram Methods 0.000 description 23
- 230000006870 function Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 5
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Dram (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2064712A JPH0316083A (ja) | 1989-03-15 | 1990-03-15 | 半導体メモリ装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-62534 | 1989-03-15 | ||
JP6253489 | 1989-03-15 | ||
JP2064712A JPH0316083A (ja) | 1989-03-15 | 1990-03-15 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0316083A JPH0316083A (ja) | 1991-01-24 |
JPH0524591B2 true JPH0524591B2 (fr) | 1993-04-08 |
Family
ID=26403578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2064712A Granted JPH0316083A (ja) | 1989-03-15 | 1990-03-15 | 半導体メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0316083A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3004313U (ja) * | 1994-05-17 | 1994-11-15 | 京橋紙器印刷株式会社 | 記録用ディスクの収納ケース |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57150190A (en) * | 1981-02-27 | 1982-09-16 | Hitachi Ltd | Monolithic storage device |
JPS607690A (ja) * | 1983-06-24 | 1985-01-16 | Toshiba Corp | 半導体メモリ |
JPS6352397A (ja) * | 1986-08-20 | 1988-03-05 | Toshiba Corp | 半導体記憶装置 |
-
1990
- 1990-03-15 JP JP2064712A patent/JPH0316083A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57150190A (en) * | 1981-02-27 | 1982-09-16 | Hitachi Ltd | Monolithic storage device |
JPS607690A (ja) * | 1983-06-24 | 1985-01-16 | Toshiba Corp | 半導体メモリ |
JPS6352397A (ja) * | 1986-08-20 | 1988-03-05 | Toshiba Corp | 半導体記憶装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3004313U (ja) * | 1994-05-17 | 1994-11-15 | 京橋紙器印刷株式会社 | 記録用ディスクの収納ケース |
Also Published As
Publication number | Publication date |
---|---|
JPH0316083A (ja) | 1991-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0388175B1 (fr) | Dispositif de mémoire à semi-conducteur | |
JPS6118837B2 (fr) | ||
US6404696B1 (en) | Random access memory with divided memory banks and data read/write architecture therefor | |
JPS60136086A (ja) | 半導体記憶装置 | |
JPH0632217B2 (ja) | 半導体記憶装置 | |
US5432733A (en) | Semiconductor memory device | |
JPS61160898A (ja) | 半導体記憶装置 | |
US20010014046A1 (en) | Semiconductor memory device for fast access | |
JP2907074B2 (ja) | 半導体記憶装置 | |
JPH0482080A (ja) | 静的ランダムアクセスメモリ | |
US4769792A (en) | Semiconductor memory device with voltage bootstrap | |
JP2875321B2 (ja) | 半導体記憶装置 | |
US4965769A (en) | Semiconductor memory capable of high-speed data erasing | |
JPS6177194A (ja) | 半導体読み出し書込みメモリデバイス | |
JPH08273364A (ja) | 共有される電源線を具備する5トランジスタメモリセル | |
US5383160A (en) | Dynamic random access memory | |
JPS5856287A (ja) | 半導体回路 | |
EP0062547A2 (fr) | Circuit de mémoire | |
US4485461A (en) | Memory circuit | |
JPH0524591B2 (fr) | ||
JP3231310B2 (ja) | 半導体記憶装置 | |
JP3079025B2 (ja) | シリアルアクセスメモリ制御回路 | |
JP3064561B2 (ja) | 半導体記憶装置 | |
US5337287A (en) | Dual port semiconductor memory device | |
JPH0414437B2 (fr) |