JPH05230187A - Epoxy resin composition for sealing - Google Patents

Epoxy resin composition for sealing

Info

Publication number
JPH05230187A
JPH05230187A JP15316591A JP15316591A JPH05230187A JP H05230187 A JPH05230187 A JP H05230187A JP 15316591 A JP15316591 A JP 15316591A JP 15316591 A JP15316591 A JP 15316591A JP H05230187 A JPH05230187 A JP H05230187A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin composition
curing agent
sealing
moisture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15316591A
Other languages
Japanese (ja)
Inventor
Masayuki Kiyougaku
正之 教学
Takashi Sakamoto
孝史 坂本
Ryuzo Hara
竜三 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP15316591A priority Critical patent/JPH05230187A/en
Publication of JPH05230187A publication Critical patent/JPH05230187A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain the subject composition having excellent water vapor resistance, solder crack resistance and reliability of water vapor resistance, comprising an epoxy resin, a specific amount of a curing agent of cresol, a phosphorus- based curing promotor and an inorganic filler. CONSTITUTION:The objective composition comprising (A) an epoxy resin (e.g. biphenyl novolak type epoxy resin), (B) a curing agent of a cresol compound of formula I having a naphthalene skeleton containing a phenolic OH group in a functional group, (C) a phosphorus-based curing promotor (e.g. triphenylphosphine) and (D) an inorganic filler (e.g. fused silica). An epoxy compound of formula II (R is H or methyl; (n) is 0-6). The component A preferably contains 50wt.% epoxy compound of formula II (R is H or methyl; (n) is 0-6) in the epoxy resin is preferable as the component A.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、封止用エポキシ樹脂組
成物に関するものである。耐吸湿半田クラック性と特に
耐湿信頼性に優れた封止用エポキシ樹脂組成物に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing epoxy resin composition. The present invention relates to an epoxy resin composition for encapsulation, which is excellent in moisture absorption resistance to solder cracking and particularly excellent in moisture resistance reliability.

【0002】[0002]

【従来技術】近年、ダイオ−ド、トランジスタ−、I
C,LSIなどの半導体や電子部品の封止方法として、
たとえばエポキシ樹脂やシリコン樹脂などによる低圧ト
ランスファ−成形による樹脂封止法が信頼性の向上とと
もに大量生産や価格面で有利性から主流を占めている。
中でもエポキシ樹脂を用いた樹脂封止法においては、オ
ルソクレゾ−ルノボラック型エポキシ樹脂を樹脂成分と
し、フェノ−ルノボラック樹脂を硬化剤成分、三級アミ
ン、イミダゾール類を硬化硬化促進剤成分とする封止用
エポキシ樹脂組成物からなる成形材料が最も多く使用さ
れている。しかしながら、最近IC,LSI、VLSI
などの半導体や電子部品の集積度が高密度化されるとと
もに、半導体装置の成形品の薄肉化のために、前記の封
止用エポキシ樹脂組成物では必ずしも十分に対応するこ
とができなくなっている。
2. Description of the Related Art In recent years, diodes, transistors, I
As a method for sealing semiconductors such as C and LSI and electronic parts,
For example, a resin encapsulation method by low-pressure transfer molding using epoxy resin or silicone resin has become the mainstream because of its improved reliability, mass production and price advantages.
Among them, in the resin encapsulation method using an epoxy resin, orthocresol-novolak type epoxy resin as a resin component, phenol novolac resin as a curing agent component, tertiary amine, imidazoles as a curing and curing accelerator component for sealing A molding material composed of an epoxy resin composition is most often used. However, recently, IC, LSI, VLSI
As the degree of integration of semiconductors and electronic components has become higher, and the molded products of semiconductor devices have become thinner, the epoxy resin composition for encapsulation described above has not always been sufficient. ..

【0003】たとえば、表面実装用半導体装置において
は、実装時に、半導体装置自身が、半田に直接浸漬され
るなど、急激に高温の環境下にさらされるため、半導体
装置の成形品にパッケ−ジクラックが発生するという問
題が生じている。この現象は、成形品となった後、半導
体装置が保管中に吸湿した水分が、高温の半田に浸漬さ
れた際に、急激に気化膨張し、封止樹脂がそれに耐えき
れず、パッケ−ジクラックを生じると考えらる。この対
応として封止用樹脂組成物について、耐熱性、吸湿性の
向上などの検討からこれら特性の改良が特開平3-39323
号公報に開示され、なされてきているが、上記の耐吸湿
半田クラック性と吸湿半田処理後の耐湿信頼性の向上に
ついては今だ十分に満足できる状況にはない。
For example, in a surface-mounting semiconductor device, during mounting, the semiconductor device itself is rapidly exposed to a high-temperature environment, such as being directly immersed in solder, so that package cracks occur in the molded product of the semiconductor device. There is a problem of occurrence. This phenomenon is that after the semiconductor device becomes a molded product, moisture absorbed during storage of the semiconductor device is rapidly vaporized and expanded when it is immersed in high-temperature solder, and the sealing resin cannot withstand it, resulting in package cracking. It is thought to occur. In response to this, improvement of these properties has been made in consideration of improvement of heat resistance and hygroscopicity of the encapsulating resin composition.
Although it has been disclosed and made in Japanese Patent Publication No. JP-A-2003-242242, the above-mentioned improvement of the moisture absorption solder crack resistance and the moisture resistance reliability after the moisture absorption solder treatment is not yet sufficiently satisfactory.

【0004】[0004]

【発明が解決しようとする課題】本発明は、吸湿後、半
田浸漬された際に、パッケ−ジクラックが発生すること
のない耐吸湿半田クラック性と特に吸湿後、半田浸漬さ
れた後の耐湿信頼性に優れた半導体の封止用エポキシ樹
脂組成物を提供することにある。
DISCLOSURE OF THE INVENTION The present invention is directed to moisture-absorbing solder cracking resistance that does not cause package cracks when solder is dipped after moisture absorption, and particularly moisture-resistant reliability after solder immersion after moisture absorption. It is intended to provide an epoxy resin composition for encapsulating a semiconductor having excellent properties.

【0005】[0005]

【課題を解決するための手段】本発明は、上記課題を解
決するためになされたもので、エポキシ樹脂、ナフ
タレン骨格を有するフェノ−ル性OH基を官能基に持つ
下記の一般式〔1〕のクレゾール化合物の硬化剤、リ
ン系の硬化促進剤、無機充填材を含有してなる封止用
エポキシ樹脂組成物を提供することにある。
The present invention has been made to solve the above-mentioned problems, and has the following general formula [1] having an epoxy resin and a phenolic OH group having a naphthalene skeleton as a functional group. Another object of the present invention is to provide a sealing epoxy resin composition containing the cresol compound curing agent, the phosphorus-based curing accelerator, and the inorganic filler.

【0006】[0006]

【化3】 [Chemical 3]

【0007】以下、この発明を詳しく説明する。エポキ
シ樹脂としては、ビフェニルノボラック型エポキシ樹
脂、フェノ−ルノボラック型エポキシ樹脂、クレゾ−ル
ノボラック型エポキシ樹脂、ビスフェノ−ルA型エポキ
シ樹脂、ビスフェノ−ルF型エポキシ樹脂または、これ
らのハロゲン化エポキシ樹脂などがあげられ例えば、そ
の中でも1分子中に2個以上のエポキシ基をもつエポキ
シ樹脂であり、エポキシ当量180〜220、軟化点6
0〜100℃のものを単独、もしくは組み合わせ、その
配合量が封止用エポキシ樹脂組成物の5〜35重量%の
範囲で用いると成形材料として混合、加熱、溶融、混練
するのに均一性が確保でき、良好に取扱うことができ
る。
The present invention will be described in detail below. Examples of the epoxy resin include biphenyl novolac type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, and halogenated epoxy resins thereof. For example, it is an epoxy resin having two or more epoxy groups in one molecule, and has an epoxy equivalent of 180 to 220 and a softening point of 6
When the compounds of 0 to 100 ° C. are used alone or in combination and the compounding amount thereof is within the range of 5 to 35% by weight of the encapsulating epoxy resin composition, there is no uniformity in mixing, heating, melting and kneading as a molding material. It can be secured and can be handled well.

【0008】特に、エポキシ樹脂中50重量%以上を次
の一般式〔2〕(式〔2〕中のRは水素原子又はメチル
基を示し、nは0〜6の整数を示す)のビフェニル型エ
ポキシ樹脂の配合量にあてるのが好ましい。50重量%
以上の使用では吸湿率が小さく、吸湿した後の半田浸漬
での耐クラック性に優れるが、50重量%未満の使用で
は、吸湿率が大きく、半導体チップとの密着性も低下す
る。
Particularly, 50% by weight or more of the epoxy resin is a biphenyl type of the following general formula [2] (R in the formula [2] represents a hydrogen atom or a methyl group, and n represents an integer of 0 to 6). It is preferable to adjust the blending amount of the epoxy resin. 50% by weight
In the above use, the moisture absorption rate is small and the crack resistance in solder immersion after absorbing the moisture is excellent, but in the use of less than 50% by weight, the moisture absorption rate is large and the adhesion to the semiconductor chip is also deteriorated.

【0009】[0009]

【化4】 [Chemical 4]

【0010】ナフタレン骨格を有し、フェノ−ル性OH
基を官能基に持つ前記の一般式〔1〕のクレゾール化合
物の硬化剤を用いる必要があり、硬化剤としてその配合
量は硬化剤中に占める割合で30重量%以上で用いるの
が好ましい。30重量%未満では低吸湿化が進まず、耐
吸湿半田クラック性の改善が認められない。なお、他に
硬化剤としてフェノ−ルノボラック樹脂、クレゾ−ルノ
ボラック樹脂、レゾ−ル樹脂などを併用する、ことがで
きる。その中でも1分子中に2個以上の水酸基をもつフ
ェノ−ル樹脂であり、水酸基当量80〜120、軟化点
60〜120℃のものを単独、もしくは組み合わせ、こ
れら硬化剤の配合量が封止用エポキシ樹脂組成物の2〜
25重量%の範囲で用いると成形材料として混合、加
熱、溶融、混練するのに均一性が確保でき、良好に取扱
うことができる。
A phenolic OH having a naphthalene skeleton
It is necessary to use a curing agent of the above-mentioned cresol compound of the general formula [1] having a group as a functional group, and the compounding amount of the curing agent is preferably 30% by weight or more in the proportion of the curing agent. If it is less than 30% by weight, the moisture absorption does not proceed so much and the improvement of the moisture absorption solder crack resistance is not recognized. In addition, a phenol novolac resin, a cresol novolac resin, a resole resin or the like can be used in combination as a curing agent. Among them, a phenol resin having two or more hydroxyl groups in one molecule, having a hydroxyl equivalent of 80 to 120 and a softening point of 60 to 120 ° C., alone or in combination, the compounding amount of these curing agents is for sealing. 2 of epoxy resin composition
When it is used in the range of 25% by weight, it is possible to ensure uniformity in mixing, heating, melting and kneading as a molding material, and it can be handled satisfactorily.

【0011】リン系の硬化促進剤としては、トリフェニ
ルホスフィン、トリフェニルホスファイト、トリフェニ
ルホスフェイトなどを用いることができる。また、他の
硬化促進剤として、三級アミン、イミダゾール類などと
併用することもできる。
As the phosphorus-based curing accelerator, triphenylphosphine, triphenylphosphite, triphenylphosphate and the like can be used. Further, as other curing accelerators, tertiary amines, imidazoles and the like can be used in combination.

【0012】無機充填材としては、例えば、溶融シリ
カ、結晶シリカ、タルク、アルミナ、珪酸カルシュウ
ム、炭酸カルシュウム、窒化硅素などの粉末があげら
れ、単独、もしくは組み合わせて用いることができる。
しかし、電子部品の封止に供するものであるため、無機
充填材5gを純水45gで95℃、20時間抽出したと
きの抽出水の電気伝導度が100μs /cm以下の高純度
な無機充填材が好ましい。特にシリカが好適である。無
機充填材の配合量は封止用エポキシ樹脂組成物の65〜
95重量%の範囲で用いると成形材料として混合、加
熱、溶融、混練するのに均一性が確保でき、良好に取扱
うことができる。
Examples of the inorganic filler include powders of fused silica, crystalline silica, talc, alumina, calcium silicate, calcium carbonate, silicon nitride and the like, which can be used alone or in combination.
However, since it is used for sealing electronic parts, the high-purity inorganic filler has an electric conductivity of 100 μs / cm or less when the 5 g of inorganic filler is extracted with 45 g of pure water at 95 ° C. for 20 hours. Is preferred. Silica is particularly preferable. The compounding amount of the inorganic filler is from 65 to 65 of the epoxy resin composition for sealing.
When it is used in the range of 95% by weight, it is possible to ensure uniformity in mixing, heating, melting and kneading as a molding material, and to handle it satisfactorily.

【0013】なお、本発明の半導体の封止用エポキシ樹
脂組成物の配合成分としては、以上の他に、適当な添加
剤、硬化硬化促進剤、難燃剤、離型剤、着色剤などを適
用することができる。
As the compounding ingredients of the epoxy resin composition for encapsulating a semiconductor of the present invention, in addition to the above, suitable additives, curing and curing accelerators, flame retardants, release agents, colorants, etc. are applied. can do.

【0014】また、以上の配合成分からなる半導体の封
止用エポキシ樹脂組成物を成形材料とするには、配合成
分を均一に混合し、加熱溶融、冷却、粉砕の通常のプロ
セスで製造することができ、この際に使用される装置た
とえば、ミキサー、ブレンダー、ニーダー、ロールなど
通常使用されるものをそのまま適用することができる。
Further, in order to form a semiconductor encapsulating epoxy resin composition comprising the above-mentioned compounding ingredients as a molding material, the compounding ingredients are uniformly mixed and manufactured by a usual process of heating, melting, cooling and crushing. The equipment used at this time, for example, mixers, blenders, kneaders, rolls and the like which are commonly used, can be applied as they are.

【0015】次に本発明を実施例と比較例によって具体
的に説明する。
Next, the present invention will be specifically described with reference to Examples and Comparative Examples.

【0016】[0016]

【実施例】【Example】

実施例 1〜4と比較例1〜4 のエポキシ樹脂としては、ビフェニルノボラック型エ
ポキシ樹脂(油化シェル社製YX-4000H、エポキシ当量1
85、一般式〔2〕においてRがメチル基、n=0のも
の)または、および、エポキシ当量195、軟化点65
℃のオルソ−クレゾ−ルノボラックエポキシ樹脂(表に
は、O・C・Nエポキシ樹脂と記載する)の硬化剤と
して、一般式〔1〕のOH基当量140のクレゾール化
合物(日本化薬社製 OCN-7000)単独及び併使用で水酸基
当量104、軟化点80℃のノボラック型フェノ−ル樹
脂を用いた。硬化促進剤としてトリフェニルホスフィ
ン、2−フェニルイミダゾール、2−メチルイミダゾー
ル、DBUのいずれかを用いた。これら、、の各
成分と配合量は表1、表2の上段に示した。単位は重量
部である。これ以外の配合成分とその配合量は共通で次
のものを用いた。単位はいずれも重量部であり、以下
「部」と省記する。
As the epoxy resin of Examples 1 to 4 and Comparative Examples 1 to 4, biphenyl novolac type epoxy resin (YX-4000H manufactured by Yuka Shell Co., epoxy equivalent 1
85, wherein R is a methyl group and n = 0 in the general formula [2]), or, and an epoxy equivalent of 195, a softening point of 65.
As a curing agent for an ortho-cresol-novolak epoxy resin (denoted as O.C.N epoxy resin in the table) at ℃, a cresol compound of the general formula [1] having an OH group equivalent of 140 (manufactured by Nippon Kayaku Co., Ltd. OCN-7000) was used alone or in combination to use a novolac-type phenol resin having a hydroxyl equivalent of 104 and a softening point of 80 ° C. Any one of triphenylphosphine, 2-phenylimidazole, 2-methylimidazole, and DBU was used as a curing accelerator. The respective components and their blending amounts are shown in the upper part of Tables 1 and 2. The unit is parts by weight. The following components were used in common with the other components and their amounts. All units are parts by weight, and will be referred to as "parts" hereinafter.

【0017】の無機充填材としては、平均粒子径14
μm 、抽出水の電気伝導度3μs /cmの溶融シリカを7
54部、カップリング剤としてγ−グリシドキシプロピ
ルトリメトキシシランを5部、難燃剤として三酸化アン
チモンを21部、エポキシ当量400、軟化点65℃の
ブロム化エポキシ樹脂を14部、着色剤としてカ−ボン
ブラックを2.5部、離型剤としてカルナバワックスを
3部それぞれ用いた。以上の配合成分の配合量を各例ご
とに均一に混合し、ロール温度100 ℃のミキシングロー
ルで加熱、溶融、混練した後、冷却し、粉砕して各半導
体の封止用エポキシ樹脂組成物の成形材料を得た。
The inorganic filler of (1) has an average particle size of 14
7 μm of fused silica with an electric conductivity of 3 μs / cm
54 parts, 5 parts of γ-glycidoxypropyltrimethoxysilane as a coupling agent, 21 parts of antimony trioxide as a flame retardant, 14 parts of a brominated epoxy resin having an epoxy equivalent of 400 and a softening point of 65 ° C., and a colorant. 2.5 parts of carbon black and 3 parts of carnauba wax as a release agent were used. The compounding amounts of the above compounding ingredients are uniformly mixed for each example, and the mixture is heated, melted, and kneaded with a mixing roll having a roll temperature of 100 ° C., cooled, and pulverized to obtain an epoxy resin composition for sealing each semiconductor. A molding material was obtained.

【0018】以上で得た各半導体の封止用エポキシ樹脂
組成物の成形材料を用いて75トントランスファー成形
機に所定の金型を取付け、それぞれ金型温度180℃、
成形時間60秒で成形した。
Using the molding material of the epoxy resin composition for sealing each semiconductor obtained above, a predetermined mold was attached to a 75-ton transfer molding machine, and the mold temperature was 180 ° C., respectively.
Molding was carried out for a molding time of 60 seconds.

【0019】吸湿率は、径50mm、厚み3mmの試験片を、
85℃、85%相対湿度で72時間処理する前後の試験
片の重量変化率で求めた。結果は表1、表2の下段に示
した。
The moisture absorption rate of a test piece having a diameter of 50 mm and a thickness of 3 mm is
The weight change rate of the test piece before and after the treatment at 85 ° C. and 85% relative humidity for 72 hours was calculated. The results are shown in the lower part of Tables 1 and 2.

【0020】吸湿半田クラックは、櫛形状のアルミニウ
ム配線回路をシリコンチップ表面に配設した評価用素子
を42アロイ製の 60QFPリードフレームに搭載したもの
を使って封止成形した60QFP 成形品12個を試験片と
し、85℃、85%相対湿度で72時間処理後、250
℃の半田槽に10秒間浸漬し、外観クラック発生の有無
で検査した。結果はクラック発生個数/全試料数で表
1、表2下段に示した。
Moisture-absorbing solder cracks were obtained by sealing and molding 12 pieces of 60QFP molded products using a 42Q 60QFP leadframe mounted with evaluation elements each having a comb-shaped aluminum wiring circuit arranged on the surface of a silicon chip. After being treated as a test piece and treated at 85 ° C and 85% relative humidity for 72 hours, 250
It was immersed in a solder bath at a temperature of 10 ° C. for 10 seconds and inspected for appearance cracks. The results are shown in the lower part of Tables 1 and 2 by the number of cracks generated / total number of samples.

【0021】吸湿半田後の耐湿信頼性は吸湿半田クラッ
クと同じ試験片の60QFP 成形品12個を用い、吸湿半田
クラック試験と同じ85℃、85%相対湿度で72時間
処理後、250℃の半田槽に10秒間浸漬する処理を
し、さらにPCTで2気圧で200時間処理した後、実
装した半導体チップのオープン不良で評価し、結果は不
良個数/全試料数で表1、表2の下段に示した。
Moisture-resistant reliability after moisture-absorption soldering was the same as that of moisture-absorption solder cracks. 12 pieces of 60QFP molded products were used. After treatment for 72 hours at the same temperature of 85 ° C and 85% relative humidity as in the moisture-absorption solder crack test, soldering at 250 ° C After dipping in a bath for 10 seconds and further treating with PCT at 2 atm for 200 hours, the mounted semiconductor chips were evaluated for open defects, and the results are shown in Table 1 and Table 2 at the bottom of Table 1 and Table 2. Indicated.

【0022】表1、表2下段の結果から、硬化剤として
ナフタレン骨格を有するフェノ−ル性OH基を官能基に
持つ前記の一般式〔1〕のクレゾール化合物の硬化剤と
リン系の硬化促進剤を含む実施例のものは吸湿後、半田
浸漬された際に、パッケ−ジクラックが発生することの
ない耐吸湿半田クラック性を良好に維持しつつ、特に吸
湿後の半田浸漬された後の耐湿信頼性に優れていること
が確認できた。
From the results shown in the lower part of Tables 1 and 2, the curing agent for the cresol compound of the above-mentioned general formula [1] having a phenolic OH group having a naphthalene skeleton as a curing agent as a curing agent and phosphorus-based curing acceleration In the examples containing the agent, after moisture absorption, when immersed in solder, moisture absorption resistance that does not cause package cracks while maintaining good solder crack resistance, especially moisture absorption after solder immersion after moisture absorption It was confirmed that the reliability was excellent.

【0023】[0023]

【発明の効果】本発明の封止用エポキシ樹脂組成物によ
って吸湿後、半田浸漬された際に、パッケ−ジクラック
が発生することのない耐吸湿半田クラック性と特に、吸
湿後、半田浸漬された後の耐湿信頼性に優れた半導体装
置、電子部品を得ることができる。
The epoxy resin composition for encapsulation of the present invention absorbs moisture after absorbing moisture, and does not cause package cracks when immersed in solder. It is possible to obtain a semiconductor device and an electronic component that are excellent in the reliability of the moisture resistance.

【0024】[0024]

【表1】 [Table 1]

【0025】[0025]

【表2】 [Table 2]

フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/31 Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 23/31

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 エポキシ樹脂、ナフタレン骨格を有
するフェノ−ル性OH基を官能基に持つ下記の一般式
〔1〕のクレゾール化合物の硬化剤、リン系の硬化促
進剤、無機充填材を含有してなることを特徴とする封
止用エポキシ樹脂組成物。 【化1】
1. An epoxy resin, a curing agent for a cresol compound of the following general formula [1] having a phenolic OH group having a naphthalene skeleton as a functional group, a phosphorus-based curing accelerator, and an inorganic filler are contained. An epoxy resin composition for encapsulation, comprising: [Chemical 1]
【請求項2】 前記エポキシ樹脂がビフェニル骨格を有
する下記の一般式〔2〕(式〔2〕中のRは水素原子又
はメチル基を示し、nは0〜6の整数を示す)のエポキ
シ樹脂でエポキシ樹脂中50重量%以上含まれることを
特徴とする請求項1記載の封止用エポキシ樹脂組成物。 【化2】
2. An epoxy resin represented by the following general formula [2] (wherein R represents a hydrogen atom or a methyl group, and n represents an integer of 0 to 6) having a biphenyl skeleton. 2. The epoxy resin composition for encapsulation according to claim 1, wherein the epoxy resin content is 50% by weight or more in the epoxy resin. [Chemical 2]
【請求項3】 前記クレゾール化合物の硬化剤が硬化剤
中30重量%以上含まれることを特徴とする請求項1記
載の封止用エポキシ樹脂組成物。
3. The encapsulating epoxy resin composition according to claim 1, wherein the cresol compound curing agent is contained in an amount of 30% by weight or more in the curing agent.
JP15316591A 1991-06-25 1991-06-25 Epoxy resin composition for sealing Pending JPH05230187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15316591A JPH05230187A (en) 1991-06-25 1991-06-25 Epoxy resin composition for sealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15316591A JPH05230187A (en) 1991-06-25 1991-06-25 Epoxy resin composition for sealing

Publications (1)

Publication Number Publication Date
JPH05230187A true JPH05230187A (en) 1993-09-07

Family

ID=15556472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15316591A Pending JPH05230187A (en) 1991-06-25 1991-06-25 Epoxy resin composition for sealing

Country Status (1)

Country Link
JP (1) JPH05230187A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450223A (en) * 1990-06-18 1992-02-19 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH04173829A (en) * 1990-11-07 1992-06-22 Hitachi Chem Co Ltd Epoxy resin molding material for sealing electric part
JPH04214714A (en) * 1990-12-11 1992-08-05 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH04236215A (en) * 1991-01-16 1992-08-25 Toshiba Chem Corp Sealing resin composition and sealed semiconductor device
JPH04300914A (en) * 1991-03-29 1992-10-23 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH04342719A (en) * 1991-05-21 1992-11-30 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450223A (en) * 1990-06-18 1992-02-19 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH04173829A (en) * 1990-11-07 1992-06-22 Hitachi Chem Co Ltd Epoxy resin molding material for sealing electric part
JPH04214714A (en) * 1990-12-11 1992-08-05 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH04236215A (en) * 1991-01-16 1992-08-25 Toshiba Chem Corp Sealing resin composition and sealed semiconductor device
JPH04300914A (en) * 1991-03-29 1992-10-23 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH04342719A (en) * 1991-05-21 1992-11-30 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device

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