JPH0519689B2 - - Google Patents
Info
- Publication number
- JPH0519689B2 JPH0519689B2 JP60011849A JP1184985A JPH0519689B2 JP H0519689 B2 JPH0519689 B2 JP H0519689B2 JP 60011849 A JP60011849 A JP 60011849A JP 1184985 A JP1184985 A JP 1184985A JP H0519689 B2 JPH0519689 B2 JP H0519689B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- substrate
- electrode
- film
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 10
- 230000014759 maintenance of location Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 etc. Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60011849A JPS61170724A (ja) | 1985-01-25 | 1985-01-25 | アクテイブマトリクス表示装置用基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60011849A JPS61170724A (ja) | 1985-01-25 | 1985-01-25 | アクテイブマトリクス表示装置用基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61170724A JPS61170724A (ja) | 1986-08-01 |
| JPH0519689B2 true JPH0519689B2 (no) | 1993-03-17 |
Family
ID=11789169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60011849A Granted JPS61170724A (ja) | 1985-01-25 | 1985-01-25 | アクテイブマトリクス表示装置用基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61170724A (no) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61157927U (no) * | 1985-03-20 | 1986-09-30 | ||
| US4819038A (en) * | 1986-12-22 | 1989-04-04 | Ibm Corporation | TFT array for liquid crystal displays allowing in-process testing |
| US5210045A (en) * | 1987-10-06 | 1993-05-11 | General Electric Company | Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays |
| JP2828981B2 (ja) * | 1987-12-25 | 1998-11-25 | 株式会社日立製作所 | 液晶ディスプレイパネル |
| DE69022010T2 (de) * | 1989-12-22 | 1996-04-18 | Philips Electronics Nv | Elektrooptische Anzeigevorrichtung mit aktiver Matrix und Speicherkondensatoren sowie Farbprojektionsapparat, der diese verwendet. |
| JP2907629B2 (ja) * | 1992-04-10 | 1999-06-21 | 松下電器産業株式会社 | 液晶表示パネル |
| WO1994000882A1 (en) * | 1992-06-24 | 1994-01-06 | Seiko Epson Corporation | Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor |
-
1985
- 1985-01-25 JP JP60011849A patent/JPS61170724A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61170724A (ja) | 1986-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4821092A (en) | Thin film transistor array for liquid crystal display panel | |
| JP3401589B2 (ja) | Ｔｆｔアレイ基板および液晶表示装置 | |
| JP3708637B2 (ja) | 液晶表示装置 | |
| KR100426980B1 (ko) | 전기 광학 장치, 그 제조 방법 및 전자 기기 | |
| US6038002A (en) | Thin film transistor liquid crystal display and method for fabricating the same | |
| EP0453324A2 (en) | Active matrix display device with thin film transistors structure | |
| US6781658B1 (en) | Reflection type liquid crystal display device having a high aperture ratio | |
| JPH1010548A (ja) | アクティブマトリクス基板およびその製造方法 | |
| JPH0465168A (ja) | 薄膜トランジスタ | |
| JP2002151699A (ja) | アクティブマトリクス型液晶表示装置 | |
| JP2556253B2 (ja) | 液晶表示装置 | |
| KR970002412A (ko) | 액정표시장치 | |
| KR19990006966A (ko) | 액티브 매트릭스 기판 | |
| JP3127619B2 (ja) | アクティブマトリクス基板 | |
| JPH0519689B2 (no) | ||
| US5796449A (en) | Active matrix liquid crystal display with one repair line above protective layer and one below | |
| JPH0431376B2 (no) | ||
| JPH1073809A (ja) | アクティブマトリックスパネル及びその製造方法 | |
| JPH0815711A (ja) | アクティブマトリクス基板 | |
| JP3326832B2 (ja) | 液晶表示装置 | |
| JPH0258030A (ja) | 液晶表示装置 | |
| JP4048711B2 (ja) | 薄膜トランジスタパネル | |
| JP2845900B2 (ja) | 液晶表示装置 | |
| JP3591674B2 (ja) | 液晶表示装置 | |
| JPH09160015A (ja) | 液晶表示素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |