JPH0519302B2 - - Google Patents

Info

Publication number
JPH0519302B2
JPH0519302B2 JP57032065A JP3206582A JPH0519302B2 JP H0519302 B2 JPH0519302 B2 JP H0519302B2 JP 57032065 A JP57032065 A JP 57032065A JP 3206582 A JP3206582 A JP 3206582A JP H0519302 B2 JPH0519302 B2 JP H0519302B2
Authority
JP
Japan
Prior art keywords
substrate
bias
electrode
insulating
substrate material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57032065A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58148428A (ja
Inventor
Nobuyuki Hayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3206582A priority Critical patent/JPS58148428A/ja
Publication of JPS58148428A publication Critical patent/JPS58148428A/ja
Publication of JPH0519302B2 publication Critical patent/JPH0519302B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
JP3206582A 1982-03-01 1982-03-01 絶縁膜形成方法 Granted JPS58148428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3206582A JPS58148428A (ja) 1982-03-01 1982-03-01 絶縁膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3206582A JPS58148428A (ja) 1982-03-01 1982-03-01 絶縁膜形成方法

Publications (2)

Publication Number Publication Date
JPS58148428A JPS58148428A (ja) 1983-09-03
JPH0519302B2 true JPH0519302B2 (enrdf_load_stackoverflow) 1993-03-16

Family

ID=12348474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3206582A Granted JPS58148428A (ja) 1982-03-01 1982-03-01 絶縁膜形成方法

Country Status (1)

Country Link
JP (1) JPS58148428A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342398A (en) * 1976-09-30 1978-04-17 Hitachi Metals Ltd Method of manufacturing multiicrystal garnet
JPS5711813A (en) * 1980-06-23 1982-01-21 Matsushita Electric Ind Co Ltd Preparation of carbide film resistor

Also Published As

Publication number Publication date
JPS58148428A (ja) 1983-09-03

Similar Documents

Publication Publication Date Title
JP2795643B2 (ja) プラズマエツチング装置
US3767551A (en) Radio frequency sputter apparatus and method
EP0070982B1 (en) Sputtering system
JP3499104B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP2002502550A (ja) 半導体ウエハ処理システムでのワークピースへのパワーの結合を改善する装置
JP2000156370A (ja) プラズマ処理方法
GB2191787A (en) Process and arrangement for sputtering a material by means of high frequency
JPH11233289A (ja) 高周波放電装置及び高周波処理装置
US8398832B2 (en) Coils for generating a plasma and for sputtering
US4802968A (en) RF plasma processing apparatus
JPH0314907B2 (enrdf_load_stackoverflow)
JP3350973B2 (ja) プラズマ処理方法およびプラズマ処理装置
JPH11274141A (ja) プラズマ処理装置及びプラズマ処理方法
JPH07254588A (ja) プラズマ表面処理装置
JPS597212B2 (ja) プラズマ・エッチング方法
JPH1060637A (ja) 基板上に材料を堆積する方法及び装置
JP2761875B2 (ja) バイアススパッタリング法による堆積膜形成装置
JPH0519302B2 (enrdf_load_stackoverflow)
JP3368743B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP3082659B2 (ja) プラズマ処理装置
JP2550368B2 (ja) 有磁場プラズマエッチング装置
JP2750430B2 (ja) プラズマ制御方法
JPS61284918A (ja) プラズマ化学気相成長装置
JPH05206071A (ja) マイクロ波プラズマ処理装置
JPS621471B2 (enrdf_load_stackoverflow)