JP2002502550A - 半導体ウエハ処理システムでのワークピースへのパワーの結合を改善する装置 - Google Patents
半導体ウエハ処理システムでのワークピースへのパワーの結合を改善する装置Info
- Publication number
- JP2002502550A JP2002502550A JP55075498A JP55075498A JP2002502550A JP 2002502550 A JP2002502550 A JP 2002502550A JP 55075498 A JP55075498 A JP 55075498A JP 55075498 A JP55075498 A JP 55075498A JP 2002502550 A JP2002502550 A JP 2002502550A
- Authority
- JP
- Japan
- Prior art keywords
- pedestal
- assembly
- insulator
- ring
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 230000008878 coupling Effects 0.000 title abstract description 13
- 238000010168 coupling process Methods 0.000 title abstract description 13
- 238000005859 coupling reaction Methods 0.000 title abstract description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 63
- 230000008021 deposition Effects 0.000 claims abstract description 35
- 239000012212 insulator Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 61
- 238000000151 deposition Methods 0.000 description 27
- 210000002381 plasma Anatomy 0.000 description 25
- 239000010408 film Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 230000001010 compromised effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.半導体ウエハ処理システムでウエハを支持するための装置であって、 ペデスタル組立体と、 ペデスタル組立体を外から取り囲む堆積リング組立体と、 ペデスタル組立体と堆積リング組立体の間に配置され、ペデスタル組立体を堆 積リング組立体から絶縁する、絶縁体と を備える装置。 2.該絶縁体が、内面と外面を有する環状のリングであり、該絶縁体の内面がペ デスタル組立体に接触し、該絶縁体の外面の一部が堆積リング組立体に接触する 請求項1に記載の装置。 3.該絶縁体が更に、等高線状である上面を備える請求項1に記載の装置。 4.該絶縁体がクオーツである請求項3に記載の装置。 5.該絶縁体がアルミナである請求項3に記載の装置。 6.該絶縁体か複雑な表面を備える請求項3に記載の装置。 7.該絶縁体が更に、ノッチ付きの開口と、これに対応するチャンネルを有し、 もって絶縁体とペデスタル組立体の間に迷路を形成する請求項6に記載の装置。 8.更に、高インピーダンスでDCレベルを与える経路を作るための、電気回路 要素をペデスタル組立体と堆積リング組立体の間に備える請求項1に記載の装置 。 9.該電気回路がインダクタである請求項8に記載の装置。 10.半導体ウエハ処理システムでウエハを支持するための装置であって、 半導体ウエハを支持するためのペデスタルと、 ペデスタルを外から取り囲むカバーリングと、 等高線状の上面を有し、ペデスタルの周縁エッジとカバーリングの間に配置さ れこれらと接触する、絶縁リングと、 電極とカバーリングの間に電気的に接続されるインダクタと を備える装置。 11.該絶縁リングがクオーツである請求項10に記載の装置。 12.該絶縁リングがアルミナである請求項10に記載の装置。 13.該絶縁リングが複雑な表面を備える請求項10に記載の装置。 14.該絶縁リングが更に、ノッチ付きの開口と、これに対応するチャンネルを 有し、もって絶縁体とペデスタル組立体の間に迷路を形成する請求項13に記載 の装置。 15.半導体ウエハ処理システムでウエハを支持するための装置であって、 半導体ウエハ処理の環境を作る真空チャンバと、 半導体ウエハを支持するための表面と、半導体ウエハにバイアスを与えるため のカソード電極を有するペデスタルと、 堆積材料とアノード電極を有するターゲットと、 ペデスタルを外から取り囲むリング組立体と、 カソード電極からアノード電極への導電経路を絶縁体するため、ペデスタルの 周縁エッジとリング組立体の間に配置される絶縁体、 ペデスタルとリング組立体の間のDCポテンシャルを導電経路に妥協すること なく維持するための、ペデスタルとリング組立体の間に電気的に接続されたイン ダクタと を備える装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/862,272 | 1997-05-23 | ||
US08/862,272 US5942042A (en) | 1997-05-23 | 1997-05-23 | Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system |
PCT/US1998/010770 WO1998053482A1 (en) | 1997-05-23 | 1998-05-21 | Apparatus for coupling power through a workpiece in a semiconductor wafer processing system |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002502550A true JP2002502550A (ja) | 2002-01-22 |
JP4334621B2 JP4334621B2 (ja) | 2009-09-30 |
Family
ID=25338098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55075498A Expired - Lifetime JP4334621B2 (ja) | 1997-05-23 | 1998-05-21 | ウエハ支持装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5942042A (ja) |
EP (1) | EP1012869A1 (ja) |
JP (1) | JP4334621B2 (ja) |
KR (1) | KR20010012878A (ja) |
TW (1) | TW451307B (ja) |
WO (1) | WO1998053482A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006144590A (ja) * | 2004-11-17 | 2006-06-08 | Mitsubishi Heavy Ind Ltd | 真空ポンプ |
JP2018127711A (ja) * | 2017-02-10 | 2018-08-16 | 株式会社アルバック | スパッタリング装置 |
CN109801828A (zh) * | 2017-11-16 | 2019-05-24 | 东京毅力科创株式会社 | 等离子体处理装置、温度控制方法以及存储介质 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
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US6284093B1 (en) | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
US6364957B1 (en) | 1997-10-09 | 2002-04-02 | Applied Materials, Inc. | Support assembly with thermal expansion compensation |
US6217704B1 (en) | 1998-09-22 | 2001-04-17 | Canon Kabushiki Kaisha | Plasma processing apparatus |
WO2000026939A1 (en) * | 1998-10-29 | 2000-05-11 | Applied Materials, Inc. | Apparatus for coupling power through a workpiece in a semiconductor wafer processing system |
US6188564B1 (en) * | 1999-03-31 | 2001-02-13 | Lam Research Corporation | Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber |
JP4419237B2 (ja) * | 1999-12-22 | 2010-02-24 | 東京エレクトロン株式会社 | 成膜装置及び被処理体の処理方法 |
JP4673478B2 (ja) * | 2000-10-05 | 2011-04-20 | キヤノンアネルバ株式会社 | バイアススパッタリング装置及びバイアススパッタリング方法 |
US6340302B1 (en) * | 2001-02-06 | 2002-01-22 | Micron Technology, Inc. | Apparatus for establishing an electrical connection with a wafer to facilitate wafer-level burn-in and methods |
US7467598B2 (en) * | 2001-04-09 | 2008-12-23 | Tegal Corporation | System for, and method of, etching a surface on a wafer |
US6620736B2 (en) * | 2001-07-24 | 2003-09-16 | Tokyo Electron Limited | Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing |
US6887340B2 (en) | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
JP2003282547A (ja) * | 2002-03-26 | 2003-10-03 | Ulvac Japan Ltd | 高選択比かつ大面積高均一プラズマ処理方法及び装置 |
US6960263B2 (en) * | 2002-04-25 | 2005-11-01 | Applied Materials, Inc. | Shadow frame with cross beam for semiconductor equipment |
US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
US20070051471A1 (en) * | 2002-10-04 | 2007-03-08 | Applied Materials, Inc. | Methods and apparatus for stripping |
US6944006B2 (en) * | 2003-04-03 | 2005-09-13 | Applied Materials, Inc. | Guard for electrostatic chuck |
US7501161B2 (en) * | 2004-06-01 | 2009-03-10 | Applied Materials, Inc. | Methods and apparatus for reducing arcing during plasma processing |
GB0424371D0 (en) * | 2004-11-04 | 2004-12-08 | Trikon Technologies Ltd | Shielding design for backside metal deposition |
US20060219172A1 (en) * | 2005-04-05 | 2006-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD equipment and electrode and deposition ring thereof |
US7837825B2 (en) * | 2005-06-13 | 2010-11-23 | Lam Research Corporation | Confined plasma with adjustable electrode area ratio |
US20070056850A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
WO2007032858A1 (en) * | 2005-09-13 | 2007-03-22 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070056845A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
US20070056843A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US7588668B2 (en) | 2005-09-13 | 2009-09-15 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
US7651571B2 (en) * | 2005-12-22 | 2010-01-26 | Kyocera Corporation | Susceptor |
US20080196661A1 (en) * | 2007-02-20 | 2008-08-21 | Brian West | Plasma sprayed deposition ring isolator |
JP5916384B2 (ja) | 2008-04-16 | 2016-05-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウェハ処理堆積物遮蔽構成材 |
JP5762281B2 (ja) | 2008-05-02 | 2015-08-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Rf物理気相蒸着用処理キット |
CN101901749B (zh) * | 2009-05-27 | 2012-08-08 | 中芯国际集成电路制造(上海)有限公司 | 减少晶片处理过程中电弧产生的方法 |
US20110217465A1 (en) * | 2010-03-08 | 2011-09-08 | Novellus Systems Inc. | Shields for substrate processing systems |
GB201102447D0 (en) * | 2011-02-11 | 2011-03-30 | Spp Process Technology Systems Uk Ltd | Composite shielding |
US9905443B2 (en) * | 2011-03-11 | 2018-02-27 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
CN107227448B (zh) * | 2017-06-30 | 2023-10-13 | 北京北方华创微电子装备有限公司 | 基座以及物理气相沉积装置 |
KR102387562B1 (ko) | 2020-06-01 | 2022-04-15 | 동의대학교 산학협력단 | 디지털 콘덴서가 장착된 다중 웨이퍼의 결합구조 및 제조방법 |
Family Cites Families (8)
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DE3835153A1 (de) * | 1988-10-15 | 1990-04-26 | Leybold Ag | Vorrichtung zum aetzen von substraten durch eine glimmentladung |
US5803977A (en) * | 1992-09-30 | 1998-09-08 | Applied Materials, Inc. | Apparatus for full wafer deposition |
US5346578A (en) * | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
US5403459A (en) * | 1993-05-17 | 1995-04-04 | Applied Materials, Inc. | Cleaning of a PVD chamber containing a collimator |
JPH08153682A (ja) * | 1994-11-29 | 1996-06-11 | Nec Corp | プラズマcvd装置 |
JPH0936088A (ja) * | 1995-07-18 | 1997-02-07 | Nissin Electric Co Ltd | プラズマ処理装置 |
JPH0935894A (ja) * | 1995-07-19 | 1997-02-07 | Nissin Electric Co Ltd | プラズマ処理装置 |
US5863340A (en) * | 1996-05-08 | 1999-01-26 | Flanigan; Allen | Deposition ring anti-rotation apparatus |
-
1997
- 1997-05-23 US US08/862,272 patent/US5942042A/en not_active Expired - Lifetime
-
1998
- 1998-05-20 TW TW087107868A patent/TW451307B/zh not_active IP Right Cessation
- 1998-05-21 JP JP55075498A patent/JP4334621B2/ja not_active Expired - Lifetime
- 1998-05-21 EP EP98923809A patent/EP1012869A1/en not_active Withdrawn
- 1998-05-21 KR KR1019997010844A patent/KR20010012878A/ko not_active Application Discontinuation
- 1998-05-21 WO PCT/US1998/010770 patent/WO1998053482A1/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006144590A (ja) * | 2004-11-17 | 2006-06-08 | Mitsubishi Heavy Ind Ltd | 真空ポンプ |
JP2018127711A (ja) * | 2017-02-10 | 2018-08-16 | 株式会社アルバック | スパッタリング装置 |
CN109801828A (zh) * | 2017-11-16 | 2019-05-24 | 东京毅力科创株式会社 | 等离子体处理装置、温度控制方法以及存储介质 |
CN109801828B (zh) * | 2017-11-16 | 2021-06-01 | 东京毅力科创株式会社 | 等离子体处理装置、温度控制方法以及存储介质 |
Also Published As
Publication number | Publication date |
---|---|
TW451307B (en) | 2001-08-21 |
EP1012869A1 (en) | 2000-06-28 |
KR20010012878A (ko) | 2001-02-26 |
US5942042A (en) | 1999-08-24 |
WO1998053482A1 (en) | 1998-11-26 |
JP4334621B2 (ja) | 2009-09-30 |
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