JPS58148428A - 絶縁膜形成方法 - Google Patents
絶縁膜形成方法Info
- Publication number
- JPS58148428A JPS58148428A JP3206582A JP3206582A JPS58148428A JP S58148428 A JPS58148428 A JP S58148428A JP 3206582 A JP3206582 A JP 3206582A JP 3206582 A JP3206582 A JP 3206582A JP S58148428 A JPS58148428 A JP S58148428A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pascal
- bias
- substrate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 10
- 239000013077 target material Substances 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 239000012212 insulator Substances 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052786 argon Inorganic materials 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 230000001939 inductive effect Effects 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 238000009413 insulation Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005513 bias potential Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- METKIMKYRPQLGS-UHFFFAOYSA-N atenolol Chemical compound CC(C)NCC(O)COC1=CC=C(CC(N)=O)C=C1 METKIMKYRPQLGS-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3206582A JPS58148428A (ja) | 1982-03-01 | 1982-03-01 | 絶縁膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3206582A JPS58148428A (ja) | 1982-03-01 | 1982-03-01 | 絶縁膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58148428A true JPS58148428A (ja) | 1983-09-03 |
| JPH0519302B2 JPH0519302B2 (enrdf_load_stackoverflow) | 1993-03-16 |
Family
ID=12348474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3206582A Granted JPS58148428A (ja) | 1982-03-01 | 1982-03-01 | 絶縁膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58148428A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5342398A (en) * | 1976-09-30 | 1978-04-17 | Hitachi Metals Ltd | Method of manufacturing multiicrystal garnet |
| JPS5711813A (en) * | 1980-06-23 | 1982-01-21 | Matsushita Electric Ind Co Ltd | Preparation of carbide film resistor |
-
1982
- 1982-03-01 JP JP3206582A patent/JPS58148428A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5342398A (en) * | 1976-09-30 | 1978-04-17 | Hitachi Metals Ltd | Method of manufacturing multiicrystal garnet |
| JPS5711813A (en) * | 1980-06-23 | 1982-01-21 | Matsushita Electric Ind Co Ltd | Preparation of carbide film resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519302B2 (enrdf_load_stackoverflow) | 1993-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0064163B1 (en) | High speed plasma etching system | |
| JPS60126832A (ja) | ドライエツチング方法および装置 | |
| KR100499763B1 (ko) | 플라즈마 에칭장치 | |
| US6719875B1 (en) | Plasma process apparatus | |
| JPS60167330A (ja) | リアクテイブイオンエツチ装置のガス供給装置 | |
| EP1030345B1 (en) | Plasma treatment equipment and impedance measurement tool | |
| JP2000156370A (ja) | プラズマ処理方法 | |
| JPH0813143A (ja) | プラズマ処理方法及び処理装置 | |
| US5221416A (en) | Plasma surface treating method | |
| JPH0927395A (ja) | プラズマ処理装置及び該装置を用いたプラズマ処理方法 | |
| EP0326531A2 (en) | Improved RF plasma processing apparatus | |
| US5330615A (en) | Symmetric double water plasma etching system | |
| JP2006054334A (ja) | 半導体製造装置、スパッタリング装置、ドライエッチング装置及び半導体装置の製造方法 | |
| JPS58148428A (ja) | 絶縁膜形成方法 | |
| US5268056A (en) | Plasma surface treating method and apparatus | |
| JP2845910B2 (ja) | スパッタリング成膜装置 | |
| JP4576011B2 (ja) | プラズマ処理装置 | |
| JP2812477B2 (ja) | 半導体処理装置 | |
| JP3038828B2 (ja) | プラズマ処理方法 | |
| JPH0645096A (ja) | プラズマ発生方法およびその装置 | |
| JPH0368136A (ja) | ドライエッチング装置 | |
| JPS63109164A (ja) | マグネトロンスパツタ装置 | |
| JPH09270299A (ja) | プラズマ処理装置 | |
| JPS627131A (ja) | ドライエツチング装置 | |
| JPH0456774A (ja) | プラズマ反応装置 |