JPH05190734A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH05190734A JPH05190734A JP4004795A JP479592A JPH05190734A JP H05190734 A JPH05190734 A JP H05190734A JP 4004795 A JP4004795 A JP 4004795A JP 479592 A JP479592 A JP 479592A JP H05190734 A JPH05190734 A JP H05190734A
- Authority
- JP
- Japan
- Prior art keywords
- resin package
- semiconductor device
- semiconductor element
- connecting portion
- element mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置及び半導体
装置の製造方法に関し、特に、半導体装置の内部に水分
等の腐蝕物が浸入し難くした半導体装置及び該半導体装
置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device in which a corrosive substance such as moisture is unlikely to enter into the inside of the semiconductor device and a method for manufacturing the semiconductor device.
【０００２】[0002]
【従来の技術】近年、電子技術の進歩は著しく、半導体
装置の応用分野が民生、産業の分野を問わず拡がるに伴
って、半導体装置は様々な環境下で用いられるようにな
ってきたので高い信頼性が要求される。2. Description of the Related Art In recent years, the progress of electronic technology has been remarkable, and the semiconductor devices have been used in various environments as the application fields of the semiconductor devices have expanded in both consumer and industrial fields. Reliability is required.
【０００３】ところで、半導体装置の信頼性を低下させ
る原因に、樹脂パッケージの外部から内部に水分等の腐
蝕物が浸入し、樹脂パッケージ内の半導体素子に悪影響
を及ぼすという問題がある。By the way, as a cause of lowering the reliability of the semiconductor device, there is a problem that a corrosive substance such as moisture penetrates into the resin package from the outside to adversely affect the semiconductor element in the resin package.
【０００４】樹脂パッケージの外部から内部に水分等の
腐蝕物が浸入して半導体素子に悪影響を及ぼす経路には
主に以下の２つの経路がある。すなわち、第１の経路は
樹脂パッケージを構成する樹脂自体が水分を通す場合で
あって、樹脂パッケージを通じて水分等の腐蝕物が浸入
し該腐蝕物が半導体素子に達するというものであり、第
２の経路は、樹脂パッケージとリードフレームとの間に
隙間が形成され、該隙間を通じて水分等の腐蝕物が内部
に浸入し内部に浸入した腐蝕物が半導体素子に達すると
いう経路である。この場合、前記２つの経路による腐蝕
物の浸入を比較すると、後者の経路の方が半導体装置の
信頼性を低下させる大きな要因になることは知られてい
る。There are mainly the following two routes through which a corrosive substance such as moisture penetrates from the outside of the resin package to adversely affect the semiconductor device. That is, the first route is a case where the resin itself that constitutes the resin package allows water to pass therethrough, and a corrosive substance such as moisture penetrates through the resin package to reach the semiconductor element. The route is a route in which a gap is formed between the resin package and the lead frame, and a corrosive substance such as moisture penetrates into the interior through the gap, and the corroded substance that has penetrated into the interior reaches the semiconductor element. In this case, it is known that comparing the penetration of the corrosive substances by the two routes, the latter route is a major factor of lowering the reliability of the semiconductor device.
【０００５】以下、従来の半導体装置の構造を図６、図
７及び図８に基づいて説明する。The structure of a conventional semiconductor device will be described below with reference to FIGS. 6, 7 and 8.
【０００６】図６は従来の半導体装置の構造を示す斜視
図、図７は前記半導体装置の内部構造を示す正面図、図
８は前記半導体装置の内部構造を示す断面図であって、
図６〜図８において、２１は半導体素子、２２はリード
フレームの半導体素子載置部、２３は金属細線、２４は
樹脂パッケージ、２５はリードフレームの外枠部（図示
は省略している。）と半導体素子載置部２２とを連結す
る連結部、２５ａは樹脂パッケージ２４の形成後に切除
された連結部２５の切断面、２７はリードフレームの外
部接続リード、２８は接着剤、２９は間隙である。FIG. 6 is a perspective view showing the structure of a conventional semiconductor device, FIG. 7 is a front view showing the internal structure of the semiconductor device, and FIG. 8 is a sectional view showing the internal structure of the semiconductor device.
6 to 8, 21 is a semiconductor element, 22 is a semiconductor element mounting portion of a lead frame, 23 is a thin metal wire, 24 is a resin package, and 25 is an outer frame portion of the lead frame (not shown). A connecting portion for connecting the semiconductor element mounting portion 22 and the semiconductor element mounting portion 22, a cut surface of the connecting portion 25 cut off after the resin package 24 is formed, 27 is an external connection lead of a lead frame, 28 is an adhesive, and 29 is a gap. is there.
【０００７】半導体素子２１は、接着剤２８により半導
体素子載置部２２に接着され、金属細線２３を介して外
部接続リード２７に接続されている。半導体素子２１、
金属細線２３及び外部接続リード２７の内側部分は保護
のため樹脂パッケージ２４により封止されており、外部
接続リード２７の外側部分及び連結部２５の切断面２５
ａは樹脂パッケージ２４よりも外部に露出している。The semiconductor element 21 is adhered to the semiconductor element mounting portion 22 with an adhesive 28, and is connected to the external connection lead 27 via the thin metal wire 23. The semiconductor element 21,
The metal thin wire 23 and the inner portion of the external connection lead 27 are sealed with a resin package 24 for protection, and the outer portion of the external connection lead 27 and the cut surface 25 of the connecting portion 25
a is exposed to the outside of the resin package 24.
【０００８】[0008]
【発明が解決しようとする課題】ところが、図８に示す
ように、樹脂パッケージ２４と連結部２５との間及び樹
脂パッケージ２４と外部接続リード２７との間には各々
間隙２９が生じており、該間隙２９を通って水分等の腐
蝕物が樹脂パッケージ２４の内部に浸入し、半導体素子
２１の電極等を腐蝕する。この間隙２９は、樹脂パッケ
ージ２４を構成する樹脂と連結部２５及び外部接続リー
ド２７を構成する金属との間の熱膨張係数の差及び樹脂
パッケージ２４を構成する樹脂に含まれる離型剤によっ
て誘起され、経時変化を受けて増大する傾向がある。However, as shown in FIG. 8, there are gaps 29 between the resin package 24 and the connecting portion 25 and between the resin package 24 and the external connection lead 27, respectively. A corrosive substance such as water penetrates into the resin package 24 through the gap 29 and corrodes the electrodes and the like of the semiconductor element 21. The gap 29 is induced by the difference in thermal expansion coefficient between the resin forming the resin package 24 and the metal forming the connecting portion 25 and the external connection lead 27 and the release agent contained in the resin forming the resin package 24. However, it tends to increase with the passage of time.
【０００９】この場合、金属細線２３が細いため、樹脂
パッケージ２４と外部接続リード２７との間の隙間２９
から浸入する水分等が金属細線２３を伝わって半導体素
子２１に至ることは少ないが、連結部２５と半導体素子
載置部２２とが一体に形成されているため、樹脂パッケ
ージ２４と連結部２５との間の隙間２９から浸入する水
分等は容易に半導体素子２１に達し、半導体素子２１の
電極等を腐蝕してしまうという問題がある。In this case, since the thin metal wire 23 is thin, a gap 29 between the resin package 24 and the external connection lead 27 is formed.
Although water or the like entering from the inside rarely reaches the semiconductor element 21 through the thin metal wire 23, since the connecting portion 25 and the semiconductor element mounting portion 22 are integrally formed, the resin package 24 and the connecting portion 25 There is a problem that water or the like entering through the gaps 29 between them easily reaches the semiconductor element 21 and corrodes the electrodes and the like of the semiconductor element 21.
【００１０】従来の半導体装置の構造においては、樹脂
パッケージ２４と連結部２５との間の間隙２９を小さく
することはできても無くすことは不可能であるために、
該間隙２９を通って浸入する水分等の腐蝕物を阻止する
ことはできないという問題があった。In the structure of the conventional semiconductor device, the gap 29 between the resin package 24 and the connecting portion 25 can be made small but cannot be eliminated.
There is a problem in that it is impossible to prevent corrosive substances such as water from penetrating through the gap 29.
【００１１】前記に鑑み、本発明は、リードフレームの
外枠部と半導体素子載置部とを連結する連結部と樹脂パ
ッケージとの間の間隙から樹脂パッケージの内部に水分
等の腐蝕物が浸入しないようにすることを目的とする。In view of the above, according to the present invention, a corrosive substance such as moisture penetrates into the inside of the resin package through the gap between the resin package and the connecting portion connecting the outer frame portion of the lead frame and the semiconductor element mounting portion. The purpose is not to.
【００１２】[0012]
【課題を解決するための手段】前記の目的を達成するた
め、請求項１及び２の発明は、半導体素子及び半導体素
子載置部を覆う内側樹脂パッケージと、半導体素子載置
部とリードフレームの外枠部とを連結していて内側樹脂
パッケージの形成後に切除された連結部の切断面とを外
側樹脂パッケージで覆うことにより、連結部の切断面を
樹脂パッケージの外部に露出させないものである。In order to achieve the above object, the inventions of claims 1 and 2 include an inner resin package for covering a semiconductor element and a semiconductor element mounting portion, a semiconductor element mounting portion and a lead frame. By covering the cut surface of the connecting portion, which is connected to the outer frame portion and cut off after the formation of the inner resin package, with the outer resin package, the cut surface of the connecting portion is not exposed to the outside of the resin package.
【００１３】具体的に請求項１の発明が講じた解決手段
は、半導体装置を、リードフレームの半導体素子載置部
に載置された半導体素子と、該半導体素子及び前記半導
体素子載置部を覆う内側樹脂パッケージと、前記半導体
素子載置部とリードフレームの外枠部とを連結していた
連結部が前記内側樹脂パッケージの形成後に切除された
跡の切断面及び前記内側樹脂パッケージを覆う外側樹脂
パッケージとを備えている構成とするものである。Specifically, a solution means taken by the invention of claim 1 is to provide a semiconductor device, a semiconductor element mounted on a semiconductor element mounting portion of a lead frame, the semiconductor element and the semiconductor element mounting portion. An outer resin package that covers the inner resin package, and a connection surface that connects the semiconductor element mounting portion and the outer frame portion of the lead frame to the cut surface cut off after the inner resin package is formed and the outer surface that covers the inner resin package. And a resin package.
【００１４】また、具体的に請求項２の発明が講じた解
決手段は、半導体装置の製造方法を、リードフレームの
外枠部に連結部を介して連結された半導体素子載置部に
載置されている半導体素子及び前記半導体素子載置部を
覆うように樹脂封止して内側樹脂パッケージを形成した
後、該内側樹脂パッケージから露出している前記連結部
を切除し、しかる後、前記連結部の切断面及び前記内側
樹脂パッケージを覆うように樹脂封止して外側樹脂パッ
ケージを形成する構成とするものである。Further, specifically, the solution means taken by the invention of claim 2 is to mount the method for manufacturing a semiconductor device on a semiconductor element mounting portion connected to an outer frame portion of a lead frame through a connecting portion. The semiconductor element and the semiconductor element mounting portion are resin-sealed to form an inner resin package, the connecting portion exposed from the inner resin package is cut off, and then the connecting portion is formed. The outer resin package is formed by resin sealing so as to cover the cut surface of the portion and the inner resin package.
【００１５】[0015]
【作用】請求項１の構成により、半導体素子載置部とリ
ードフレームの外枠部とを連結していた連結部が内側樹
脂パッケージの形成後に切除された跡の切断面及び内側
樹脂パッケージを覆う外側樹脂パッケージを備えている
ため、連結部の切断面は樹脂パッケージの外部に露出い
ない。このため、樹脂パッケージと連結部との間から水
分等の腐蝕物が樹脂パッケージの内部に浸入することは
ない。According to the structure of claim 1, the connecting portion connecting the semiconductor element mounting portion and the outer frame portion of the lead frame covers the cut surface and the inner resin package cut off after the inner resin package is formed. Since the outer resin package is provided, the cut surface of the connecting portion is not exposed to the outside of the resin package. For this reason, corrosive substances such as water do not enter the inside of the resin package from between the resin package and the connecting portion.
【００１６】請求項２の構成により、内側樹脂パッケー
ジの形成後に該内側樹脂パッケージから露出している連
結部を切除し、しかる後、連結部の切断面及び内側樹脂
パッケージを覆うように外側樹脂パッケージを形成する
ため、連結部の切断面が外側樹脂パッケージから露出い
ない半導体装置を簡易且つ確実に製造することができ
る。According to the structure of claim 2, the connecting portion exposed from the inner resin package is cut off after the inner resin package is formed, and then the outer resin package is covered so as to cover the cut surface of the connecting portion and the inner resin package. Therefore, the semiconductor device in which the cut surface of the connecting portion is not exposed from the outer resin package can be easily and reliably manufactured.
【００１７】[0017]
【実施例】以下、本発明の一実施例を図１〜図４に基づ
いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.
【００１８】図１は本発明の一実施例に係る半導体装置
の斜視図、図２は前記半導体装置の内部構造を示す正面
図、図３は前記半導体装置の内部構造を示す側面図、図
４は前記半導体装置のリードフレームの正面図、図５は
前記半導体装置の断面図であって、図１〜図４におい
て、１は半導体素子、２はリードフレームの半導体素子
載置部、３は金属細線、４は半導体素子１及び半導体素
子載置部２を覆う内側樹脂パッケージ、５は内側樹脂パ
ッケージ４を覆う外側樹脂パッケージ、６はリードフレ
ームの外部接続リード、７は半導体載置部２とリードフ
レームの外枠部とを連結する連結部、７ａは内側樹脂パ
ッケージ４の形成後に切除された連結部７の切断面、８
は半導体素子１と半導体素子載置部２とを接着している
接着剤、９Ａは内側樹脂パッケージ４と外部接続リード
６との間の間隙、９Ｂは内側樹脂パッケージ４と連結部
７との間の間隙、１０は連結部７における内側樹脂パッ
ケージ４の形成後に切除される切除部、１１はリードフ
レームの外枠部を構成する下桟部、１２は外部接続リー
ド６同士を連結する中桟部、１３はリードフレームの外
枠部を構成する上桟部である。FIG. 1 is a perspective view of a semiconductor device according to an embodiment of the present invention, FIG. 2 is a front view showing the internal structure of the semiconductor device, FIG. 3 is a side view showing the internal structure of the semiconductor device, and FIG. 5 is a front view of a lead frame of the semiconductor device, FIG. 5 is a sectional view of the semiconductor device, and in FIGS. 1 to 4, 1 is a semiconductor element, 2 is a semiconductor element mounting portion of the lead frame, and 3 is metal. A thin wire, 4 is an inner resin package that covers the semiconductor element 1 and the semiconductor element mounting portion 2, 5 is an outer resin package that covers the inner resin package 4, 6 is an external connection lead of a lead frame, and 7 is the semiconductor mounting portion 2 and leads. A connecting portion for connecting the outer frame portion of the frame, 7a is a cut surface of the connecting portion 7 cut off after the formation of the inner resin package 4, 8
Is an adhesive that bonds the semiconductor element 1 and the semiconductor element mounting portion 2 to each other, 9A is a gap between the inner resin package 4 and the external connection lead 6, and 9B is between the inner resin package 4 and the connecting portion 7. Gap, 10 is a cutout portion that is cut out after the inner resin package 4 is formed in the connection portion 7, 11 is a lower rail portion that constitutes an outer frame portion of the lead frame, and 12 is a middle rail portion that connects the external connection leads 6 to each other. , 13 are upper rails that form the outer frame of the lead frame.
【００１９】本実施例に係る半導体装置は次のようにし
て製造される。すなわち、半導体素子１を接着剤８によ
ってリードフレームの半導体素子載置部２に接着した
後、半導体素子１の電極部と外部接続リード７とを金属
細線３を介して電気的に接続する。次に、半導体素子
１、半導体素子載置部２及び外部接続リード７の内側部
分を樹脂封止して内側樹脂パッケージ４を形成した後、
内側樹脂パッケージ４から露出している連結部７の切除
部１０を切除する。次に、内側樹脂パッケージ４及び該
内側樹脂パッケージ４から露出している連結部７の切断
面７ａを覆うように樹脂封止して外側樹脂パッケージ５
を形成する。尚、前記内側樹脂パッケージ４及び外側樹
脂パッケージ５を形成する方法としてはトランスファー
モールド法を用いることが好ましい。次に、下桟部１
１、中桟部１２、上桟部１３を各々切断して、半導体装
置同士及び外部接続リード６同士を互いに分離する。The semiconductor device according to this embodiment is manufactured as follows. That is, after the semiconductor element 1 is adhered to the semiconductor element mounting portion 2 of the lead frame by the adhesive agent 8, the electrode portion of the semiconductor element 1 and the external connection lead 7 are electrically connected via the thin metal wire 3. Next, after the inner parts of the semiconductor element 1, the semiconductor element mounting portion 2 and the external connection leads 7 are resin-sealed to form the inner resin package 4,
The cutout portion 10 of the connecting portion 7 exposed from the inner resin package 4 is cut off. Next, the outer resin package 5 is sealed with resin so as to cover the inner resin package 4 and the cut surface 7a of the connecting portion 7 exposed from the inner resin package 4.
To form. A transfer molding method is preferably used as a method of forming the inner resin package 4 and the outer resin package 5. Next, the lower cross section 1
1, the middle rail portion 12 and the upper rail portion 13 are cut to separate the semiconductor devices from each other and the external connection leads 6 from each other.
【００２０】本実施例に係る半導体装置によると、内側
樹脂パッケージ４と該内側樹脂パッケージ４から露出し
ている連結部７の切断面７ａとを覆う外側樹脂パッケー
ジ５を設けたため、連結部７の切断面７ａは外側樹脂パ
ッケージ５の外部に露出いない。このため、内側樹脂パ
ッケージ４と連結部７との間から水分等の腐蝕物が内側
樹脂パッケージ４の内部に浸入することがないので、こ
の経路による水分等の腐蝕物の半導体素子１への浸入は
阻止され、高い信頼性を有する半導体装置を得ることが
できる。According to the semiconductor device of this embodiment, since the outer resin package 5 covering the inner resin package 4 and the cut surface 7a of the connecting portion 7 exposed from the inner resin package 4 is provided, the connecting portion 7 The cut surface 7a is not exposed to the outside of the outer resin package 5. Therefore, corrosive substances such as moisture do not enter the inside of the inner resin package 4 through the space between the inner resin package 4 and the connecting portion 7. Therefore, the corrosive substances such as moisture enter the semiconductor element 1 through this route. Therefore, a semiconductor device having high reliability can be obtained.
【００２１】また、本実施例に係る半導体装置の製造工
程によると、内側樹脂パッケージ４から露出している連
結部７の切除部１０を切除する工程と、内側樹脂パッケ
ージ４と該内側樹脂パッケージ４から露出している連結
部７の切断面７ａとを覆うように樹脂封止して外側樹脂
パッケージ５を形成する工程とを付加するだけで前記構
造の半導体装置を得ることができるので、技術的に既存
の工程を利用して簡易に信頼性の高い半導体装置を製造
することができる。Further, according to the manufacturing process of the semiconductor device of this embodiment, the step of cutting off the cutout portion 10 of the connecting portion 7 exposed from the inner resin package 4, the inner resin package 4, and the inner resin package 4 are removed. Since the semiconductor device having the above structure can be obtained only by adding a step of resin-sealing so as to cover the cut surface 7a of the connecting portion 7 exposed from the outside and forming the outer resin package 5. In addition, a highly reliable semiconductor device can be easily manufactured by utilizing the existing process.
【００２２】[0022]
【発明の効果】以上説明したように、請求項１の発明に
係る半導体装置によると、内側樹脂パッケージの形成後
に切除された連結部の切断面及び内側樹脂パッケージを
覆う外側樹脂パッケージを備えているため、連結部の切
断面が樹脂パッケージの外部に露出しないので、樹脂パ
ッケージと連結部との間から水分等の腐蝕物が樹脂パッ
ケージの内部に浸入することがなく、信頼性の高い半導
体装置を得ることができる。As described above, according to the semiconductor device of the first aspect of the present invention, the semiconductor device is provided with the outer resin package that covers the cut surface of the connecting portion cut off after the inner resin package is formed and the inner resin package. Therefore, since the cut surface of the connecting portion is not exposed to the outside of the resin package, a corrosive substance such as water does not enter the inside of the resin package from between the resin package and the connecting portion, and a highly reliable semiconductor device is provided. Obtainable.
【００２３】また、請求項２の発明に係る半導体装置の
製造方法によると、内側樹脂パッケージから露出してい
る連結部を切除した後、連結部の切断面及び内側樹脂パ
ッケージとを覆うように外側樹脂パッケージを形成する
ので、連結部の切断面が樹脂パッケージから露出いない
請求項１の発明に係る半導体装置を簡易且つ確実に製造
することができる。Further, according to the method of manufacturing a semiconductor device of the second aspect of the invention, after the connecting portion exposed from the inner resin package is cut off, the outer surface is covered so as to cover the cut surface of the connecting portion and the inner resin package. Since the resin package is formed, it is possible to easily and reliably manufacture the semiconductor device according to the invention of claim 1 in which the cut surface of the connecting portion is not exposed from the resin package.
【図１】本発明の一実施例に係る半導体装置の構造を示
す斜視図である。FIG. 1 is a perspective view showing a structure of a semiconductor device according to an embodiment of the present invention.
【図２】前記半導体装置の内部構造を示す正面図であ
る。FIG. 2 is a front view showing an internal structure of the semiconductor device.
【図３】前記半導体装置の内部構造を示す側面図であ
る。FIG. 3 is a side view showing an internal structure of the semiconductor device.
【図４】前記半導体装置のリードフレームの正面図であ
る。FIG. 4 is a front view of a lead frame of the semiconductor device.
【図５】前記半導体装置の内部構造を示す断面図であ
る。FIG. 5 is a cross-sectional view showing an internal structure of the semiconductor device.
【図６】従来の半導体装置の構造を示す斜視図である。FIG. 6 is a perspective view showing a structure of a conventional semiconductor device.
【図７】従来の半導体装置の内部構造を示す正面図であ
る。FIG. 7 is a front view showing the internal structure of a conventional semiconductor device.
【図８】従来の半導体装置の内部構造を示す断面図であ
る。FIG. 8 is a cross-sectional view showing the internal structure of a conventional semiconductor device.
１ 半導体素子 ２ 半導体素子載置部 ３ 金属細線 ４ 内側樹脂パッケージ ５ 外側樹脂パッケージ ６ 外部接続リード ７ 連結部 ７ａ 切断面 ８ 接着剤 ９Ａ 内側樹脂パッケージと外部接続リードとの間の間
隙 ９Ｂ 内側樹脂パッケージと連結部との間の間隙 １０ 連結部の切除部 １１ リードフレームの下桟部 １２ リードフレームの中桟部 １３ リードフレームの上桟部 ２１ 半導体素子 ２２ 半導体素子載置部 ２３ 金属細線 ２４ 樹脂パッケージ ２５ 連結部 ２５ａ 連結部の切断面 ２７ 外部接続リード ２８ 接着剤 ２９ 間隙DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Semiconductor element mounting part 3 Metal thin wire 4 Inner resin package 5 Outer resin package 6 External connection lead 7 Connecting part 7a Cut surface 8 Adhesive 9A Gap between inner resin package and external connection lead 9B Inner resin package Gap between the connection part and the connection part 10 Cutaway part of the connection part 11 Lower bar part of the lead frame 12 Middle bar part of the lead frame 13 Upper bar part of the lead frame 21 Semiconductor element 22 Semiconductor element mounting part 23 Metal thin wire 24 Resin package 25 connection part 25a cut surface of connection part 27 external connection lead 28 adhesive 29 gap
Claims (2)
置された半導体素子と、該半導体素子及び前記半導体素
子載置部を覆う内側樹脂パッケージと、前記半導体素子
載置部とリードフレームの外枠部とを連結していた連結
部が前記内側樹脂パッケージの形成後に切除された跡の
切断面及び前記内側樹脂パッケージを覆う外側樹脂パッ
ケージとを備えていることを特徴とする半導体装置。1. A semiconductor element mounted on a semiconductor element mounting portion of a lead frame, an inner resin package covering the semiconductor element and the semiconductor element mounting portion, and an outer portion of the semiconductor element mounting portion and the lead frame. A semiconductor device comprising: a connecting portion that is connected to the frame portion; and a cut surface that is cut off after the inner resin package is formed and an outer resin package that covers the inner resin package.
て連結された半導体素子載置部に載置されている半導体
素子及び前記半導体素子載置部を覆うように樹脂封止し
て内側樹脂パッケージを形成した後、該内側樹脂パッケ
ージから露出している前記連結部を切除し、しかる後、
前記連結部の切断面及び前記内側樹脂パッケージを覆う
ように樹脂封止して外側樹脂パッケージを形成すること
を特徴とする半導体装置の製造方法。2. A semiconductor element mounted on a semiconductor element mounting portion connected to an outer frame portion of a lead frame via a connecting portion and a resin-sealed inner side for covering the semiconductor element mounting portion. After forming the resin package, the connecting portion exposed from the inner resin package is cut off, and then,
A method of manufacturing a semiconductor device, comprising encapsulating a resin so as to cover a cut surface of the connecting portion and the inner resin package to form an outer resin package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4004795A JPH05190734A (en) | 1992-01-14 | 1992-01-14 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4004795A JPH05190734A (en) | 1992-01-14 | 1992-01-14 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05190734A true JPH05190734A (en) | 1993-07-30 |
Family
ID=11593713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4004795A Pending JPH05190734A (en) | 1992-01-14 | 1992-01-14 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05190734A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012053205A1 (en) * | 2010-10-21 | 2012-04-26 | パナソニック株式会社 | Semiconductor device and production method for same |
| JP2017044712A (en) * | 2016-12-09 | 2017-03-02 | 日立オートモティブシステムズ株式会社 | Physical quantity measurement device |
-
1992
- 1992-01-14 JP JP4004795A patent/JPH05190734A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012053205A1 (en) * | 2010-10-21 | 2012-04-26 | パナソニック株式会社 | Semiconductor device and production method for same |
| CN102714202A (en) * | 2010-10-21 | 2012-10-03 | 松下电器产业株式会社 | Semiconductor device and production method for same |
| JPWO2012053205A1 (en) * | 2010-10-21 | 2014-02-24 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
| JP5683600B2 (en) * | 2010-10-21 | 2015-03-11 | パナソニックＩｐマネジメント株式会社 | Semiconductor device and manufacturing method thereof |
| US8987877B2 (en) | 2010-10-21 | 2015-03-24 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
| JP2017044712A (en) * | 2016-12-09 | 2017-03-02 | 日立オートモティブシステムズ株式会社 | Physical quantity measurement device |
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