JPH0518908B2 - - Google Patents
Info
- Publication number
- JPH0518908B2 JPH0518908B2 JP57066603A JP6660382A JPH0518908B2 JP H0518908 B2 JPH0518908 B2 JP H0518908B2 JP 57066603 A JP57066603 A JP 57066603A JP 6660382 A JP6660382 A JP 6660382A JP H0518908 B2 JPH0518908 B2 JP H0518908B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- sample
- electrostatic chuck
- dry etching
- chuck mechanism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 26
- 230000007246 mechanism Effects 0.000 claims description 22
- 238000001312 dry etching Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000005041 Mylar™ Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035936 sexual power Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6660382A JPS58185773A (ja) | 1982-04-21 | 1982-04-21 | ドライエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6660382A JPS58185773A (ja) | 1982-04-21 | 1982-04-21 | ドライエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58185773A JPS58185773A (ja) | 1983-10-29 |
| JPH0518908B2 true JPH0518908B2 (zh) | 1993-03-15 |
Family
ID=13320646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6660382A Granted JPS58185773A (ja) | 1982-04-21 | 1982-04-21 | ドライエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58185773A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0670985B2 (ja) * | 1989-09-27 | 1994-09-07 | 株式会社日立製作所 | 試料の温度制御方法及び装置 |
| JPH0670986B2 (ja) * | 1989-09-27 | 1994-09-07 | 株式会社日立製作所 | 真空処理装置の試料保持方法 |
| JP2580791B2 (ja) * | 1989-09-27 | 1997-02-12 | 株式会社日立製作所 | 真空処理装置 |
| JPH04137529A (ja) * | 1990-09-27 | 1992-05-12 | Oki Electric Ind Co Ltd | ドライプロセス装置 |
| JP3375646B2 (ja) * | 1991-05-31 | 2003-02-10 | 株式会社日立製作所 | プラズマ処理装置 |
| KR100463782B1 (ko) * | 1995-09-20 | 2005-04-28 | 가부시끼가이샤 히다치 세이사꾸쇼 | 정전흡착전극및그제작방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5647574A (en) * | 1979-09-28 | 1981-04-30 | Toshiba Corp | Plasma etching apparatus |
| JPS577935A (en) * | 1980-06-19 | 1982-01-16 | Fujitsu Ltd | Method for dry etching |
| JPS5760074A (en) * | 1980-09-30 | 1982-04-10 | Fujitsu Ltd | Dry etching method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115047U (zh) * | 1979-02-06 | 1980-08-13 |
-
1982
- 1982-04-21 JP JP6660382A patent/JPS58185773A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5647574A (en) * | 1979-09-28 | 1981-04-30 | Toshiba Corp | Plasma etching apparatus |
| JPS577935A (en) * | 1980-06-19 | 1982-01-16 | Fujitsu Ltd | Method for dry etching |
| JPS5760074A (en) * | 1980-09-30 | 1982-04-10 | Fujitsu Ltd | Dry etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58185773A (ja) | 1983-10-29 |
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