JPS6254191B2 - - Google Patents
Info
- Publication number
- JPS6254191B2 JPS6254191B2 JP56150801A JP15080181A JPS6254191B2 JP S6254191 B2 JPS6254191 B2 JP S6254191B2 JP 56150801 A JP56150801 A JP 56150801A JP 15080181 A JP15080181 A JP 15080181A JP S6254191 B2 JPS6254191 B2 JP S6254191B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- magnetic field
- gauss
- cathode
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15080181A JPS5855567A (ja) | 1981-09-25 | 1981-09-25 | プラズマエツチング方法 |
EP81109891A EP0054201B1 (en) | 1980-12-11 | 1981-11-25 | Dry etching device and method |
DE8181109891T DE3175576D1 (en) | 1980-12-11 | 1981-11-25 | Dry etching device and method |
DD81235634A DD208011A5 (de) | 1980-12-11 | 1981-12-10 | Trockenaetzverfahren und -vorrichtung |
US06/559,857 US4492610A (en) | 1980-12-11 | 1983-12-12 | Dry Etching method and device therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15080181A JPS5855567A (ja) | 1981-09-25 | 1981-09-25 | プラズマエツチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5855567A JPS5855567A (ja) | 1983-04-01 |
JPS6254191B2 true JPS6254191B2 (zh) | 1987-11-13 |
Family
ID=15504720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15080181A Granted JPS5855567A (ja) | 1980-12-11 | 1981-09-25 | プラズマエツチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5855567A (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4668338A (en) * | 1985-12-30 | 1987-05-26 | Applied Materials, Inc. | Magnetron-enhanced plasma etching process |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5915982A (ja) * | 1982-07-19 | 1984-01-27 | 松下電器産業株式会社 | グラフイツク表示装置 |
-
1981
- 1981-09-25 JP JP15080181A patent/JPS5855567A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5915982A (ja) * | 1982-07-19 | 1984-01-27 | 松下電器産業株式会社 | グラフイツク表示装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5855567A (ja) | 1983-04-01 |
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