JPH0534433B2 - - Google Patents

Info

Publication number
JPH0534433B2
JPH0534433B2 JP18270483A JP18270483A JPH0534433B2 JP H0534433 B2 JPH0534433 B2 JP H0534433B2 JP 18270483 A JP18270483 A JP 18270483A JP 18270483 A JP18270483 A JP 18270483A JP H0534433 B2 JPH0534433 B2 JP H0534433B2
Authority
JP
Japan
Prior art keywords
magnet
anode
cathode
dry etching
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP18270483A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6075589A (ja
Inventor
Haruo Okano
Yasuhiro Horiike
Takashi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP18270483A priority Critical patent/JPS6075589A/ja
Publication of JPS6075589A publication Critical patent/JPS6075589A/ja
Publication of JPH0534433B2 publication Critical patent/JPH0534433B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP18270483A 1983-09-30 1983-09-30 ドライエツチング装置 Granted JPS6075589A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18270483A JPS6075589A (ja) 1983-09-30 1983-09-30 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18270483A JPS6075589A (ja) 1983-09-30 1983-09-30 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS6075589A JPS6075589A (ja) 1985-04-27
JPH0534433B2 true JPH0534433B2 (zh) 1993-05-24

Family

ID=16122974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18270483A Granted JPS6075589A (ja) 1983-09-30 1983-09-30 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS6075589A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169418A (ja) * 1986-01-22 1987-07-25 Toshiba Corp ドライエツチング装置
JPH0831439B2 (ja) * 1986-03-05 1996-03-27 株式会社東芝 反応性イオンエッチング方法
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
JP2620553B2 (ja) * 1988-02-29 1997-06-18 東京エレクトロン株式会社 プラズマ処理装置
JP2826895B2 (ja) * 1990-09-19 1998-11-18 ティーディーケイ株式会社 永久磁石磁気回路

Also Published As

Publication number Publication date
JPS6075589A (ja) 1985-04-27

Similar Documents

Publication Publication Date Title
US4609428A (en) Method and apparatus for microwave plasma anisotropic dry etching
US6902683B1 (en) Plasma processing apparatus and plasma processing method
US6129806A (en) Plasma processing apparatus and plasma processing method
US4526643A (en) Dry etching apparatus using reactive ions
JPS5816078A (ja) プラズマエツチング装置
JP2000223299A (ja) プラズマ源
JPH0711072B2 (ja) イオン源装置
JP3081003B2 (ja) プラズマ処理装置
JPH0534433B2 (zh)
JPH05102083A (ja) ドライエツチング方法及びそのための装置
JPH0473288B2 (zh)
JP4554117B2 (ja) 表面処理装置
JP2674995B2 (ja) 基板処理方法およびその装置
JPS6063388A (ja) ドライエツチング装置
JPS5848421A (ja) ドライエツチング装置
JPS6342707B2 (zh)
JPS6011109B2 (ja) ドライエツチング方法及び装置
JPH0530301B2 (zh)
JP2606551B2 (ja) 中性粒子ビームエッチング装置
JPS6015930A (ja) プラズマ装置
JP2738810B2 (ja) プラズマ処理装置
JP3624986B2 (ja) ビーム加工方法及び装置
JPS6046378A (ja) ドライエツチング装置
JPS6182434A (ja) プラズマ処理装置
JPS6276627A (ja) ドライエツチング装置