JPH051665B2 - - Google Patents
Info
- Publication number
- JPH051665B2 JPH051665B2 JP60003514A JP351485A JPH051665B2 JP H051665 B2 JPH051665 B2 JP H051665B2 JP 60003514 A JP60003514 A JP 60003514A JP 351485 A JP351485 A JP 351485A JP H051665 B2 JPH051665 B2 JP H051665B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- receiving element
- light receiving
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60003514A JPS61161868A (ja) | 1985-01-11 | 1985-01-11 | 密着型イメ−ジセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60003514A JPS61161868A (ja) | 1985-01-11 | 1985-01-11 | 密着型イメ−ジセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61161868A JPS61161868A (ja) | 1986-07-22 |
| JPH051665B2 true JPH051665B2 (OSRAM) | 1993-01-08 |
Family
ID=11559467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60003514A Granted JPS61161868A (ja) | 1985-01-11 | 1985-01-11 | 密着型イメ−ジセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61161868A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2700247B2 (ja) * | 1988-03-26 | 1998-01-19 | 株式会社半導体エネルギー研究所 | 炭素膜がコートされた光電変換装置の作製方法 |
| JP2007255929A (ja) * | 2006-03-20 | 2007-10-04 | Kyoto Univ | 焦電型赤外線センサ |
-
1985
- 1985-01-11 JP JP60003514A patent/JPS61161868A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61161868A (ja) | 1986-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5032718A (en) | Photo sensor array and reader with hexagonal fiber bundles | |
| JPS62144459A (ja) | 完全密着型センサ− | |
| JPS6215854A (ja) | 光学的イメ−ジヤ | |
| JPH051665B2 (OSRAM) | ||
| JPS628951B2 (OSRAM) | ||
| JPH0658950B2 (ja) | 密着型イメ−ジセンサ | |
| JPS5840856A (ja) | 光センサアレイ | |
| JPS61248655A (ja) | 密着型イメ−ジセンサ | |
| JPS61161757A (ja) | 密着型イメ−ジセンサ | |
| JP2974151B2 (ja) | 密着センサ | |
| JPS61124168A (ja) | 密着型イメ−ジセンサ− | |
| JPH0747874Y2 (ja) | 密着型イメ−ジセンサ | |
| JPH09116128A (ja) | 指紋画像入力装置及びその製造方法 | |
| JPS62262563A (ja) | 密着形イメ−ジセンサ | |
| JPH0712076B2 (ja) | 密着型イメ−ジセンサ | |
| JPH01138751A (ja) | 光センサ−アレイ及び読み取り装置 | |
| JPS62186559A (ja) | 光電変換素子 | |
| JPS6236962A (ja) | 密着型イメ−ジセンサ | |
| JPS61245761A (ja) | 密着型イメ−ジセンサ | |
| JPH0456167A (ja) | 密着型イメージセンサ | |
| JPH01192167A (ja) | センサー | |
| JPH0628309B2 (ja) | 密着型イメ−ジセンサ | |
| JPS62194670A (ja) | 非晶質シリコン・イメ−ジセンサ | |
| JPH0441862B2 (OSRAM) | ||
| JP2639663B2 (ja) | 光電変換素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |