JPH0516168B2 - - Google Patents

Info

Publication number
JPH0516168B2
JPH0516168B2 JP3783584A JP3783584A JPH0516168B2 JP H0516168 B2 JPH0516168 B2 JP H0516168B2 JP 3783584 A JP3783584 A JP 3783584A JP 3783584 A JP3783584 A JP 3783584A JP H0516168 B2 JPH0516168 B2 JP H0516168B2
Authority
JP
Japan
Prior art keywords
substrate
substrate holder
partition wall
reaction
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3783584A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60182721A (ja
Inventor
Kazumi Kasai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3783584A priority Critical patent/JPS60182721A/ja
Publication of JPS60182721A publication Critical patent/JPS60182721A/ja
Publication of JPH0516168B2 publication Critical patent/JPH0516168B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP3783584A 1984-02-29 1984-02-29 気相成長方法 Granted JPS60182721A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3783584A JPS60182721A (ja) 1984-02-29 1984-02-29 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3783584A JPS60182721A (ja) 1984-02-29 1984-02-29 気相成長方法

Publications (2)

Publication Number Publication Date
JPS60182721A JPS60182721A (ja) 1985-09-18
JPH0516168B2 true JPH0516168B2 (enrdf_load_stackoverflow) 1993-03-03

Family

ID=12508586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3783584A Granted JPS60182721A (ja) 1984-02-29 1984-02-29 気相成長方法

Country Status (1)

Country Link
JP (1) JPS60182721A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2524106B2 (ja) * 1986-01-18 1996-08-14 キヤノン株式会社 超薄膜積層構造層を有する光受容部材

Also Published As

Publication number Publication date
JPS60182721A (ja) 1985-09-18

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