JPH0515647B2 - - Google Patents

Info

Publication number
JPH0515647B2
JPH0515647B2 JP63216476A JP21647688A JPH0515647B2 JP H0515647 B2 JPH0515647 B2 JP H0515647B2 JP 63216476 A JP63216476 A JP 63216476A JP 21647688 A JP21647688 A JP 21647688A JP H0515647 B2 JPH0515647 B2 JP H0515647B2
Authority
JP
Japan
Prior art keywords
superconducting
site
superconductor
bismuth oxide
superconducting compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63216476A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01278423A (ja
Inventor
Uirufuretsudo Jonson Junia Debitsuto
Furanshiisu Mazeisu Reonarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
AT&T Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Inc filed Critical AT&T Inc
Publication of JPH01278423A publication Critical patent/JPH01278423A/ja
Publication of JPH0515647B2 publication Critical patent/JPH0515647B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C01G29/006—Compounds containing bismuth, with or without oxygen or hydrogen, and containing two or more other elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
    • Y10S505/782—Bismuth-, e.g. BiCaSrCuO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/784—Bismuth-, e.g. BaKBiO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/801—Composition
    • Y10S505/809—Ceramic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/81—Compound

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
JP63216476A 1988-04-25 1988-09-01 ビスマス酸化物超伝導体と、この超伝導体からなる装置 Granted JPH01278423A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US185750 1988-04-25
US07/185,750 US4933317A (en) 1988-04-25 1988-04-25 Bismuth oxide superconductors, and devices and systems comprising such a superconductor

Publications (2)

Publication Number Publication Date
JPH01278423A JPH01278423A (ja) 1989-11-08
JPH0515647B2 true JPH0515647B2 (enExample) 1993-03-02

Family

ID=22682316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63216476A Granted JPH01278423A (ja) 1988-04-25 1988-09-01 ビスマス酸化物超伝導体と、この超伝導体からなる装置

Country Status (3)

Country Link
US (1) US4933317A (enExample)
JP (1) JPH01278423A (enExample)
CA (1) CA1340229C (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648320A (en) * 1985-05-31 1997-07-15 Jacobs; Richard L. Method of manufacturing ceramic superconductor circuit board
US5504138A (en) * 1985-05-31 1996-04-02 Jacobs; Richard Circuit board devices with superconducting bonds and lines
NZ228132A (en) * 1988-04-08 1992-04-28 Nz Government Metal oxide material comprising various mixtures of bi, tl, pb, sr, ca, cu, y and ag
EP0339886A2 (en) * 1988-04-28 1989-11-02 AT&T Corp. A-site substituted bismuth oxide superconductors, and devices and systems comprising such a superconductor
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US7323581B1 (en) 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
CA2053549A1 (en) * 1990-11-15 1992-05-16 John A. Agostinelli Construction of high temperature josephson junction device
EP0491496B1 (en) * 1990-12-19 1995-09-13 AT&T Corp. Article comprising a superconductor/insulator layer structure, and method of making the article
US5250817A (en) * 1992-08-12 1993-10-05 Microelectronics And Computer Technology Corporation Alkali barrier superconductor Josephson junction and circuit
US5413983A (en) * 1993-08-10 1995-05-09 The United States Of America As Represented By The Secretary Of The Army Millimeter wave ferrite switch utilizing a superconducting switching coil
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
CN104658993B (zh) * 2014-12-22 2017-06-20 永新电子常熟有限公司 低功耗的电子芯片

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3932315A (en) * 1974-09-24 1976-01-13 E. I. Du Pont De Nemours & Company Superconductive barium-lead-bismuth oxides

Also Published As

Publication number Publication date
US4933317A (en) 1990-06-12
JPH01278423A (ja) 1989-11-08
CA1340229C (en) 1998-12-15

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