JPH0512318B2 - - Google Patents
Info
- Publication number
- JPH0512318B2 JPH0512318B2 JP34343289A JP34343289A JPH0512318B2 JP H0512318 B2 JPH0512318 B2 JP H0512318B2 JP 34343289 A JP34343289 A JP 34343289A JP 34343289 A JP34343289 A JP 34343289A JP H0512318 B2 JPH0512318 B2 JP H0512318B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- lanthanum gallate
- annealing
- lagao
- lanthanum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 73
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 46
- 229910052746 lanthanum Inorganic materials 0.000 claims description 45
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 45
- 238000000137 annealing Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 6
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34343289A JPH03199198A (ja) | 1989-12-28 | 1989-12-28 | ランタンガレート単結晶およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34343289A JPH03199198A (ja) | 1989-12-28 | 1989-12-28 | ランタンガレート単結晶およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03199198A JPH03199198A (ja) | 1991-08-30 |
| JPH0512318B2 true JPH0512318B2 (de) | 1993-02-17 |
Family
ID=18361472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34343289A Granted JPH03199198A (ja) | 1989-12-28 | 1989-12-28 | ランタンガレート単結晶およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03199198A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210047362A (ko) * | 2012-10-26 | 2021-04-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｐｅｃｖｄ 장치 및 프로세스 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19635847C2 (de) * | 1996-09-04 | 1998-07-16 | Daimler Benz Aerospace Ag | Lenkflugkörper mit Staustrahlantrieb |
| JP5174456B2 (ja) * | 2005-03-30 | 2013-04-03 | 株式会社福田結晶技術研究所 | ガレート単結晶及びその作成方法 |
-
1989
- 1989-12-28 JP JP34343289A patent/JPH03199198A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210047362A (ko) * | 2012-10-26 | 2021-04-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｐｅｃｖｄ 장치 및 프로세스 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03199198A (ja) | 1991-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4447497A (en) | CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby | |
| JPH0512318B2 (de) | ||
| JPH04198095A (ja) | 化合物半導体薄膜成長方法 | |
| JPS5840820A (ja) | シリコン単結晶膜形成法 | |
| JPH0218974A (ja) | 超伝導体素子及びその製法 | |
| JPH02311398A (ja) | 酸化物超電導膜の製造方法 | |
| JP3152322B2 (ja) | 無双晶（Ｎｄ，Ｌａ）ＧａＯ３単結晶およびその製造方法 | |
| JPH01145397A (ja) | 酸化物超伝導薄膜の製造方法 | |
| JP2733899B2 (ja) | レアア−ス・ガリウム・ペロブスカイト単結晶の育成方法 | |
| KR100329776B1 (ko) | 실리콘웨이퍼의표면결함제거를위한반도체소자제조방법 | |
| JP2000026199A (ja) | 炭化珪素単結晶の製造方法および炭化珪素単結晶 | |
| JPH01249691A (ja) | 超電導薄膜製造法 | |
| JPH04175300A (ja) | シリコン単結晶の熱処理方法 | |
| JPH01242499A (ja) | ＺｎＳｅ単結晶の転位減少法 | |
| JP2696928B2 (ja) | ヘテロエピタキシャル成長方法 | |
| JPH03199199A (ja) | ランタンガレート単結晶基板およびランタンガレート単結晶ならびにランタンガレート単結晶基板の製造方法 | |
| JP3171476B2 (ja) | 磁性ガーネット単結晶膜の製造方法 | |
| JPH02105517A (ja) | 半導体装置の製造方法 | |
| JPH0380194A (ja) | レアアース・ガリウム・ペロブスカイト単結晶およびその製造方法 | |
| JPH01143235A (ja) | エピタキシヤル成長用結晶基板 | |
| JP2640615B2 (ja) | 圧電性結晶の製造方法 | |
| JPH04202100A (ja) | ＮｄＧａＯ↓３単結晶のエッチング方法 | |
| JPH02311397A (ja) | 酸化物超電導膜の製造方法 | |
| JPH04170389A (ja) | 酸化物超伝導薄膜合成方法 | |
| JPH0725699A (ja) | 酸化物超電導材料の製造方法 |