JPH0512310B2 - - Google Patents
Info
- Publication number
- JPH0512310B2 JPH0512310B2 JP22397782A JP22397782A JPH0512310B2 JP H0512310 B2 JPH0512310 B2 JP H0512310B2 JP 22397782 A JP22397782 A JP 22397782A JP 22397782 A JP22397782 A JP 22397782A JP H0512310 B2 JPH0512310 B2 JP H0512310B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- diameter
- shape
- shoulder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 17
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004033 diameter control Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22397782A JPS59116189A (ja) | 1982-12-22 | 1982-12-22 | 単結晶形状制御方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22397782A JPS59116189A (ja) | 1982-12-22 | 1982-12-22 | 単結晶形状制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59116189A JPS59116189A (ja) | 1984-07-04 |
| JPH0512310B2 true JPH0512310B2 (fr) | 1993-02-17 |
Family
ID=16806636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22397782A Granted JPS59116189A (ja) | 1982-12-22 | 1982-12-22 | 単結晶形状制御方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59116189A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63242991A (ja) * | 1987-03-31 | 1988-10-07 | Shin Etsu Handotai Co Ltd | 結晶径制御方法 |
-
1982
- 1982-12-22 JP JP22397782A patent/JPS59116189A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59116189A (ja) | 1984-07-04 |
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