JPS644998B2 - - Google Patents
Info
- Publication number
- JPS644998B2 JPS644998B2 JP17282082A JP17282082A JPS644998B2 JP S644998 B2 JPS644998 B2 JP S644998B2 JP 17282082 A JP17282082 A JP 17282082A JP 17282082 A JP17282082 A JP 17282082A JP S644998 B2 JPS644998 B2 JP S644998B2
- Authority
- JP
- Japan
- Prior art keywords
- heater
- single crystal
- crystal
- melt
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 239000002775 capsule Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- -1 ZnSe Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17282082A JPS5964591A (ja) | 1982-09-30 | 1982-09-30 | 単結晶引上装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17282082A JPS5964591A (ja) | 1982-09-30 | 1982-09-30 | 単結晶引上装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5964591A JPS5964591A (ja) | 1984-04-12 |
| JPS644998B2 true JPS644998B2 (fr) | 1989-01-27 |
Family
ID=15948973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17282082A Granted JPS5964591A (ja) | 1982-09-30 | 1982-09-30 | 単結晶引上装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5964591A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046993A (ja) * | 1983-08-23 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上装置 |
| JPS6046998A (ja) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上方法及びそのための装置 |
| JPS6153187A (ja) * | 1984-08-24 | 1986-03-17 | Sony Corp | 単結晶成長装置 |
| DE19959416C1 (de) | 1999-12-09 | 2001-03-15 | Freiberger Compound Mat Gmbh | Heizelement zum Beheizen von Schmelztiegeln und Anordnung von Heizelementen |
-
1982
- 1982-09-30 JP JP17282082A patent/JPS5964591A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5964591A (ja) | 1984-04-12 |
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