JPH0511652B2 - - Google Patents
Info
- Publication number
- JPH0511652B2 JPH0511652B2 JP957987A JP957987A JPH0511652B2 JP H0511652 B2 JPH0511652 B2 JP H0511652B2 JP 957987 A JP957987 A JP 957987A JP 957987 A JP957987 A JP 957987A JP H0511652 B2 JPH0511652 B2 JP H0511652B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- photosensitive resin
- semiconductor substrate
- resist
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011347 resin Substances 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP957987A JPS63177518A (ja) | 1987-01-19 | 1987-01-19 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP957987A JPS63177518A (ja) | 1987-01-19 | 1987-01-19 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63177518A JPS63177518A (ja) | 1988-07-21 |
| JPH0511652B2 true JPH0511652B2 (en, 2012) | 1993-02-16 |
Family
ID=11724220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP957987A Granted JPS63177518A (ja) | 1987-01-19 | 1987-01-19 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63177518A (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2560773B2 (ja) * | 1988-02-26 | 1996-12-04 | 三菱電機株式会社 | パターン形成方法 |
| JPH0299959A (ja) * | 1988-10-06 | 1990-04-11 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
| JPH07105334B2 (ja) * | 1989-08-28 | 1995-11-13 | 日本電気株式会社 | レジストパターンの現像方法 |
| JP2870443B2 (ja) * | 1995-02-06 | 1999-03-17 | サンケン電気株式会社 | レジストパタ−ンの形成方法 |
-
1987
- 1987-01-19 JP JP957987A patent/JPS63177518A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63177518A (ja) | 1988-07-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |