JPH05109507A - Voltage dependent non linear resistor porcelain device - Google Patents

Voltage dependent non linear resistor porcelain device

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Publication number
JPH05109507A
JPH05109507A JP3269204A JP26920491A JPH05109507A JP H05109507 A JPH05109507 A JP H05109507A JP 3269204 A JP3269204 A JP 3269204A JP 26920491 A JP26920491 A JP 26920491A JP H05109507 A JPH05109507 A JP H05109507A
Authority
JP
Japan
Prior art keywords
plating
cylinder
electrode
voltage
sized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3269204A
Other languages
Japanese (ja)
Other versions
JP2882128B2 (en
Inventor
Keiichi Noi
慶一 野井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3269204A priority Critical patent/JP2882128B2/en
Publication of JPH05109507A publication Critical patent/JPH05109507A/en
Application granted granted Critical
Publication of JP2882128B2 publication Critical patent/JP2882128B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To obtain a device which attaches no polarity to varistor voltage and produces no changes in insulation resistance by forming semiconductor ceramics in cylindrical shape and, what is more, defining the cylindrical shape of the semiconductor device in such a fashion that one terminal section of the cylinder may be larger-sized than the other terminal section. CONSTITUTION:A cylindrical shape 13 is formed with semiconductor ceramics mainly composed of SrTiO2 and having voltage dependent non linear resistant characteristics. One terminal section 10 of the cylinder 13 is larger-sized than the other terminal section 9 and formed in cylindrical shape as well. The length of the larger-sized cylinder 10 is made shorter than that of the other portion 9. In the central part of the cylinder 13 is formed a penetration hole. An inner peripheral electrode 11 is formed on the whole inner peripheral surface of the cylinder 13, thereby forming an outer peripheral electrode 12 on the whole outer peripheral surface of the small-sized portion of the cylinder 13 and on a doughnut-shaped plane in contact with the small-sized cylindrical portion 9 on the larger-sized cylinder 10. It is also acceptable to replace a part of main component Sr of the semiconductor ceramics with one element and more, such as Ca, Ba and Mg. This construction makes it possible to stabilize the electric properties and obtain high reliability devices as well.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は電気機器,電子機器で発
生する異常高電圧,ノイズ,静電気などから機器の半導
体及び回路を保護するためのコンデンサ特性とバリスタ
特性を有する電圧依存性非直線抵抗体磁器素子に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage-dependent non-linear resistance having capacitor characteristics and varistor characteristics for protecting semiconductors and circuits of equipment from abnormal high voltage, noise, static electricity, etc. generated in electric equipment and electronic equipment. The present invention relates to a body porcelain element.

【0002】[0002]

【従来の技術】従来、各種の電気機器,電子機器におけ
る異常高電圧の吸収,ノイズの除去,火花消去,静電気
対策のために電圧依存性非直線抵抗特性を有するSiC
バリスタや、ZnO系バリスタなどが使用されている。
このようなバリスタの電圧−電流特性は近似的に次式の
ように表すことができる。
2. Description of the Related Art Conventionally, SiC having a voltage-dependent non-linear resistance characteristic for absorbing abnormal high voltage, eliminating noise, eliminating sparks, and preventing static electricity in various electric and electronic devices.
Varistors and ZnO-based varistor are used.
The voltage-current characteristic of such a varistor can be approximately represented by the following equation.

【0003】[0003]

【数1】 [Equation 1]

【0004】ここで、Iは電流、Vは電圧、Cはバリス
タ固有の定数、αは電圧−電流非直線指数である。
Here, I is a current, V is a voltage, C is a constant unique to a varistor, and α is a voltage-current nonlinear index.

【0005】SiCバリスタのαは2〜7程度、ZnO
系バリスタではαが50にもおよぶものがある。このよ
うなバリスタは比較的高い電圧の吸収には優れた性能を
有しているが、誘電率が低く、固有の静電容量が小さい
ためバリスタ電圧以下の比較的低い電圧の吸収にはほと
んど効果を示さず、また誘電損失Tanδが5〜10%と
大きい。
Α of a SiC varistor is about 2 to 7, ZnO
In some system varistor, α is as high as 50. Although such a varistor has excellent performance in absorbing a relatively high voltage, it has almost no effect in absorbing a relatively low voltage below the varistor voltage due to its low dielectric constant and small intrinsic capacitance. Is not shown, and the dielectric loss Tan δ is as large as 5 to 10%.

【0006】一方、これらの低電圧のノイズなどの除去
には見かけの誘電率5×104程度で、Tanδが1%前後
の半導体コンデンサが利用されている。しかし、このよ
うな半導体コンデンサはサージなどによりある限度以上
の電圧または電流が印加されると静電容量が減少したり
破壊したりしてコンデンサとしての機能を果たさなくな
ったりする。
On the other hand, a semiconductor capacitor having an apparent dielectric constant of about 5 × 10 4 and a Tan δ of about 1% is used to remove these low-voltage noises. However, when a voltage or current exceeding a certain limit is applied due to a surge or the like, the capacitance of such a semiconductor capacitor is reduced or destroyed, and the semiconductor capacitor does not function as a capacitor.

【0007】そこで最近になってSrTiO3を主成分
とし、バリスタ特性とコンデンサ特性の両方の機能を有
するものが開発され、コンピュータなどの電子機器にお
けるIC,LSIなどの半導体素子及び回路の保護や電
子機器を相互に継ぐケーブルやコネクタなどから侵入す
るノイズの除去に利用されている。
Therefore, recently, a material containing SrTiO 3 as a main component and having functions of both varistor characteristics and capacitor characteristics has been developed, and protection of semiconductor elements and circuits such as IC and LSI in electronic devices such as computers and circuits and electronic It is used to remove noise that enters from cables and connectors that connect devices to each other.

【0008】[0008]

【発明が解決しようとする課題】前記SrTiO3を主
成分とするバリスタとコンデンサの両方の機能を有する
素子をコネクタなどから侵入するノイズの除去に使用す
る場合、素子の構成は一般的に図3のようになってい
る。図3において、1,2は電極、3はSrTiO 3
主成分とした電圧依存性非直線抵抗特性を有する半導体
セラミックからなる素子である。このような素子をコネ
クタに組み込むと一般的に図4のようになる。ところが
図4のような構成にすると、ピン4と素子3の隙間に半
田5の一部が流れ込み見掛け上の電極間距離が小さくな
り、バリスタ電圧が低くなってバリスタ電圧に極性がつ
き絶縁抵抗が低くなるといった欠点を有していた。図4
において、6は導電性接続部材としての半田、7は共通
端子である。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention3The Lord
Functions as both a varistor and a capacitor as components
Used to remove the noise that enters the element from the connector etc.
In general, the element structure is as shown in Fig. 3.
It In FIG. 3, 1 and 2 are electrodes and 3 is SrTiO 3. 3To
A semiconductor having voltage-dependent nonlinear resistance characteristics as a main component
An element made of ceramic. Connect an element like this
When assembled in the actuator, it is generally as shown in FIG. However
With the configuration shown in Fig. 4, the gap between pin 4 and element 3
A part of the field 5 flows in and the apparent distance between the electrodes becomes small.
Therefore, the varistor voltage becomes low and the varistor voltage has polarity.
It had the drawback of low insulation resistance. Figure 4
, 6 is solder as a conductive connecting member, 7 is common
It is a terminal.

【0009】そこで本発明では、ピンと素子の間の隙間
に半田の一部が流れ込んでもバリスタ電圧が変化せずバ
リスタ電圧に極性がつかず絶縁抵抗が変化しない構成の
素子を提供することを目的とするものである。
Therefore, it is an object of the present invention to provide an element having a structure in which the varistor voltage does not change even if part of the solder flows into the gap between the pin and the element, the varistor voltage does not have polarity, and the insulation resistance does not change. To do.

【0010】[0010]

【課題を解決するための手段】前記の目的を達成するた
めに本発明では、SrTiO3を主成分とした電圧依存
性非直線抵抗特性を有する半導体セラミックを全体が円
筒形でかつ円筒の一方の端部が他の部分より大きい径の
円筒状をなすとともに前記大きい径の円筒の長さが他の
部分よりも短く前記全体の円筒の中央部に円筒状の貫通
孔を有するように形成し、かつ円筒の内周面全体に一方
の電極を設けるとともに、前記円筒の外周径が小さい部
分の外周面全体及び前記大きい径の円筒の前記円筒の外
周径が小さい円筒部分に接するドーナツ状の平面に他方
の電極を設けたものである。
In order to achieve the above object, according to the present invention, a semiconductor ceramic having SrTiO 3 as a main component and having a voltage-dependent nonlinear resistance characteristic is entirely cylindrical and one of The end portion is formed into a cylindrical shape having a diameter larger than that of the other portion, and the length of the large diameter cylinder is shorter than that of the other portion so that the central portion of the entire cylinder has a cylindrical through hole. And while providing one electrode on the entire inner peripheral surface of the cylinder, in a donut-shaped plane in contact with the entire outer peripheral surface of the portion of the outer diameter of the cylinder is small and the cylindrical portion of the outer diameter of the cylinder of the large diameter cylinder is small. The other electrode is provided.

【0011】[0011]

【作用】本発明によれば、前記円筒の内周電極が一つの
電極として一体化されるため、ピンと素子の隙間に半田
や導電性接着剤などが流れ込んでも一体化された電極の
上であるため、見掛けの電極間距離は変化しない。従っ
て電気的特性は安定でバリスタ電圧は変化せずバリスタ
電圧に極性はつかず絶縁抵抗は変化しないことになる。
According to the present invention, since the inner electrode of the cylinder is integrated as one electrode, even if solder or a conductive adhesive flows into the gap between the pin and the element, it is on the integrated electrode. Therefore, the apparent distance between the electrodes does not change. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage does not have polarity, and the insulation resistance does not change.

【0012】さらに、前記円筒の外周径が小さい部分全
体に他方の電極を設けることにより、前記外周電極を共
通端子に半田や導電性接着剤などで接続した場合、接続
が容易で接着力が大きくできるとともに余分な半田や導
電性接着剤などのたれを前記全体が円筒形で円筒の一方
の端部が他の部分より大きい径の円筒状部分で止めるこ
とにより、見掛けの電極間距離は変化しないようにする
ことができる。また仮に半田などの導電性接着剤がたれ
込んでも他方の電極から離れる方向にたれ込むことか
ら、見掛けの電極間距離は変化しない。また前記大きい
径の円筒の前記円筒の外周径が小さい円筒部分に接する
ドーナツ状の平面に他方の電極を設けたことにより、共
通端子を導電性接着剤などで接続する場合接触する面積
が大きくなり接続が容易で、二方向から接続することが
できるため共通端子と素子の間の接着力を強くすること
ができ、機械的強度を向上させることができるととも
に、温度サイクル試験による特性の劣化を小さくするこ
とができ、信頼性を向上させることができる。また内周
電極,外周電極、及び共通端子の最上層を半田メッキに
することにより、例えばピンと内周電極の隙間や外周電
極と共通端子の隙間を小さくしておけば、導電性接着部
材がなくても加熱処理するだけで内周電極及び外周電
極,共通端子の最上層の半田メッキが互いに溶融して接
続させることができる。また素子の電気的特性を十分に
引き出すためにはCuメッキ,Niメッキ,Crメッ
キ,Snメッキ,Pbメッキ,Auメッキ,Agメッ
キ,Pdメッキ,半田メッキのうちの少なくとも1つを
重ねた構成にすることにより、素子と電極の界面にバリ
ヤーを形成することなく素子の電気的特性を十分に引き
出すことができるとともに、容易に半田付けでき、複数
の種類の多層メッキ構造にすることにより半田耐熱性を
向上させることができる。
Further, by providing the other electrode over the entire portion of the cylinder having a small outer diameter, when the outer electrode is connected to the common terminal with solder or a conductive adhesive, the connection is easy and the adhesive strength is large. The apparent inter-electrode distance does not change by stopping the sagging of excess solder or conductive adhesive with a cylindrical part with a cylindrical shape whose one end is larger than the other part. You can Further, even if the conductive adhesive such as solder falls down, it falls down in the direction away from the other electrode, so that the apparent distance between the electrodes does not change. Further, by providing the other electrode on the doughnut-shaped flat surface in contact with the cylindrical portion having a small outer diameter of the large diameter cylinder, the contact area becomes large when the common terminal is connected by a conductive adhesive or the like. Connection is easy, and since it can be connected from two directions, the adhesive force between the common terminal and the element can be strengthened, the mechanical strength can be improved, and the deterioration of characteristics due to the temperature cycle test can be reduced. It is possible to improve reliability. If the innermost electrode, the outermost electrode, and the uppermost layer of the common terminal are plated with solder, for example, the gap between the pin and the innermost electrode and the gap between the outermost electrode and the common terminal are reduced, the conductive adhesive member is eliminated. However, the inner peripheral electrode, the outer peripheral electrode, and the solder plating on the uppermost layer of the common terminal can be melted and connected to each other only by heat treatment. Further, in order to sufficiently bring out the electrical characteristics of the element, at least one of Cu plating, Ni plating, Cr plating, Sn plating, Pb plating, Au plating, Ag plating, Pd plating, and solder plating should be stacked. By doing so, the electrical characteristics of the element can be sufficiently drawn out without forming a barrier at the interface between the element and the electrode, and it can be easily soldered. Can be improved.

【0013】[0013]

【実施例】(実施例1)以下に実施例を挙げて具体的に
説明する。
Embodiments (Embodiment 1) Hereinafter, embodiments will be specifically described.

【0014】まずSrCO3,CaCO3,BaCO3
MgCO3,TiO2を下記の(表1)及び(表2)に示
すように組成比を種々変えて秤量し、ボールミルなどで
34h混合する。次に、乾燥した後、1050℃で10
h焼成し、再びボールミルなどで34h粉砕した後乾燥
し第1成分とする。
First, SrCO 3 , CaCO 3 , BaCO 3 ,
MgCO 3 and TiO 2 are weighed with various composition ratios changed as shown in (Table 1) and (Table 2) below, and mixed for 34 h by a ball mill or the like. Next, after drying, it is heated at 1050 ° C. for 10 minutes.
After baking for h, it is crushed again by a ball mill for 34 h and then dried to obtain the first component.

【0015】[0015]

【表1】 [Table 1]

【0016】[0016]

【表2】 [Table 2]

【0017】次に、第1成分,第2成分,第3成分を下
記の(表1),(表2)に示した組成比になるように秤
量し、ボールミルなどで34h混合した後、乾燥し、ポ
リビニルアルコールなどの有機バインダーを10wt%添
加して造粒した後、1(t/cm2)のプレス圧力で円筒
の外周径が小さい部分は外径4mmφ内径1.4mmφ高さ
2.5mmt,円筒の外周径が大きい部分は外径6mmφ内
径1.4mmφ高さ0.5mmtの円筒状に成形し、空気中
で1230℃で15h焼成し脱バインダーする。次に、
還元性雰囲気、例えばN2:H2=9:1のガス中で14
15℃で4h焼成する。さらにその後、酸化性雰囲気、
例えば空気中で1135℃で4h焼成する。こうして得
られた焼結体の内周面にZnなどからなるオーミック性
の導電性ペーストを、例えばローラー転写などの方法に
より設け、前記円筒の外周径が小さい部分の外周面全体
にZnなどからなるオーミック性の導電性ペーストを、
例えばローラー転写などの方法により設け、さらに前記
大きい径の円筒の前記円筒の外周径が小さい円筒部分に
接するドーナツ状の平面にZnなどからなるオーミック
性の導電性ペーストを、例えばローラー転写などの方法
により他方の電極を設ける。その後120℃で10分間
乾燥させ、さらにその上から非オーミック性の導電性ペ
ーストを同様にしてローラー転写などの方法により設
け、120℃で10分間乾燥させ、630℃,3分で焼
成し、内周電極,外周電極を形成する。図1はこのよう
にして得られた素子を示し、11は円筒の内周面全面に
設けられた内周電極、12は円筒の外周径が小さい部分
の外周面全体及び大きい径の円筒上で前記円筒の外周径
が小さい円筒部分に接するドーナツ状の平面に設けられ
た外周電極、13はSrTiO3を主成分とした電圧依
存性非直線抵抗特性を有する半導体セラミックからなる
素子であり、円筒の中央部に円筒状の貫通孔が形成され
ている。次に、図2に示したように半田や導電性接着剤
などの導電性接続部材14,15によりピン16及び共
通端子17を取り付け、ブタジエンゴムなどの樹脂を充
填し、加熱硬化する。なお、18はケースである。
Next, the first component, the second component, and the third component were weighed so that the composition ratios shown in the following (Table 1) and (Table 2) were obtained, mixed with a ball mill for 34 hours, and then dried. Then, after adding 10 wt% of an organic binder such as polyvinyl alcohol to granulate, the portion with a small outer diameter of the cylinder at a press pressure of 1 (t / cm 2 ) has an outer diameter of 4 mm, an inner diameter of 1.4 mm, and a height of 2.5 mm. t, the outside diameter is larger portion of the cylinder is formed into a cylindrical shape having an outer diameter 6mmφ inner diameter 1.4mmφ height 0.5 mm t, to debinder and 15h fired at 1230 ° C. in air. next,
14 in a reducing atmosphere such as N 2 : H 2 = 9: 1 gas
Bake for 4 hours at 15 ° C. After that, an oxidizing atmosphere,
For example, it is baked in air at 1135 ° C. for 4 hours. An ohmic conductive paste made of Zn or the like is provided on the inner peripheral surface of the thus obtained sintered body by, for example, a method such as roller transfer, and the entire outer peripheral surface of the portion where the outer peripheral diameter of the cylinder is small is made of Zn or the like. Ohmic conductive paste,
For example, an ohmic conductive paste made of Zn or the like is provided on a donut-shaped flat surface which is provided by a method such as roller transfer and is in contact with a cylindrical portion having a small outer diameter of the cylinder having the large diameter, and a method such as roller transfer is used. To provide the other electrode. After that, it is dried at 120 ° C. for 10 minutes, and a non-ohmic conductive paste is similarly provided thereon by a method such as roller transfer, dried at 120 ° C. for 10 minutes, and baked at 630 ° C. for 3 minutes. A peripheral electrode and an outer peripheral electrode are formed. FIG. 1 shows an element thus obtained, 11 is an inner peripheral electrode provided on the entire inner peripheral surface of the cylinder, 12 is the entire outer peripheral surface of the portion where the outer peripheral diameter of the cylinder is small and on the large diameter cylinder. An outer peripheral electrode provided on a doughnut-shaped flat surface in contact with the cylindrical portion having a small outer peripheral diameter, and 13 is an element made of a semiconductor ceramic containing SrTiO 3 as a main component and having voltage-dependent nonlinear resistance characteristics. A cylindrical through hole is formed in the center. Next, as shown in FIG. 2, the pins 16 and the common terminal 17 are attached by the conductive connecting members 14 and 15 such as solder or a conductive adhesive, and a resin such as butadiene rubber is filled and heat-cured. In addition, 18 is a case.

【0018】(実施例2)実施例1と同様にして焼成体
を得た後、内周面にZnなどからなるオーミック性の導
電性ペーストを、例えばローラー転写などの方法により
設け、前記円筒の外周径が小さい部分の外周面全体にZ
nなどからなるオーミック性の導電性ペーストを、例え
ばローラー転写などの方法により設け、さらに前記大き
い径の円筒の前記円筒の外周径が小さい円筒部分に接す
るドーナツ状の平面にZnなどからなるオーミック性の
導電性ペーストを、例えばローラー転写などの方法によ
り他方の電極を設けた後、120℃で10分間乾燥さ
せ、630℃,3分で焼成する。
(Example 2) After obtaining a fired body in the same manner as in Example 1, an ohmic conductive paste made of Zn or the like is provided on the inner peripheral surface by, for example, a roller transfer method or the like, Z on the entire outer peripheral surface of the part where the outer diameter is small
An ohmic conductive paste composed of n or the like is provided by, for example, a method such as roller transfer, and further, a ohmic property composed of Zn or the like is formed on a donut-shaped flat surface in contact with a cylindrical portion having a small outer diameter of the cylinder having the large diameter. After the other electrode is provided by, for example, a method such as roller transfer, the conductive paste of (1) is dried at 120 ° C. for 10 minutes and baked at 630 ° C. for 3 minutes.

【0019】次に、弱酸などにより導電部分を活性化
し、無電解により活性化した部分にのみCuメッキ−N
iメッキを施し、さらにその上に電解半田メッキして三
層構造にし、内周電極11,外周電極12を形成する。
次に、実施例1と同様に半田などの導電性接続部材1
4,15などによりピン16及び共通端子17を取り付
け、ブタジエンゴムなどの樹脂を充填し、加熱硬化す
る。このようにして得られた素子の特性を素子単品とコ
ネクタ組み立て後について(表3),(表4)に示す。
Next, the conductive portion is activated by a weak acid or the like, and only the portion activated by electroless is Cu-plated-N.
Then, i-plating is performed, and electrolytic solder plating is performed on the i-plating to form a three-layer structure to form the inner peripheral electrode 11 and the outer peripheral electrode 12.
Next, as in Example 1, a conductive connecting member 1 such as solder
The pin 16 and the common terminal 17 are attached with 4, 15, and the like, a resin such as butadiene rubber is filled, and the resin is cured by heating. The characteristics of the element thus obtained are shown in (Table 3) and (Table 4) after assembling the element alone and the connector.

【0020】[0020]

【表3】 [Table 3]

【0021】[0021]

【表4】 [Table 4]

【0022】なお、V1mAは1mAの電流を流した時に素
子の両端にかかる電圧であり、V1mAの極性は正方向の
V1mAと負方向のV1mAの差を正方向のV1mAで割った
値であり、絶縁抵抗は印加電圧12VDCの時のピン1
6と共通端子17の間の絶縁抵抗値である。
V1mA is a voltage applied to both ends of the element when a current of 1mA is applied, and the polarity of V1mA is a value obtained by dividing the difference between V1mA in the positive direction and V1mA in the negative direction by V1mA in the positive direction. Insulation resistance is pin 1 when applied voltage is 12VDC
6 is an insulation resistance value between 6 and the common terminal 17.

【0023】なお、上記実施例においては、第1成分の
Srの一部をCa,Ba,Mgで置換する割合は、実施
例では一部しか示さなかったが、素子の特性としてバリ
スタ特性とコンデンサ特性を同時に持つ範囲内であれば
どのようなものであってもかまわない。また第2成分,
第3成分は実施例では一部の組み合わせについてのみ示
したが、素子の特性としてバリスタ特性とコンデンサ特
性を同時に持つ範囲内であればどのような成分であって
もかまわない。また、オーミック性の電極としてはZn
以外にAg,Cu,Niなどがあるが、これら以外でも
素子と電極との界面でオーミック接続がとれるものであ
ればどのようなものであってもかまわない。また、メッ
キする成分及びその組合せについては一部についてのみ
示したがこれら以外の成分及び組合せで同様の効果が得
られるものであれば、これらに限定されない。またメッ
キ方法は電解でも無電解でもかまわないし、酸性メッキ
でも塩基性メッキでも中性メッキでもかまわない。ま
た、電圧依存性非直線抵抗体磁器素子に、例えばフェラ
イト,コイル,トロイダルコイルなどからなるインダク
タンスを接続する構成にし、ノイズ除去効果を改善する
ことができる。
In the above-mentioned embodiments, the ratio of substituting Ca, Ba, and Mg for a part of Sr of the first component is only partially shown in the embodiments, but the varistor characteristics and the capacitor are the characteristics of the element. It does not matter as long as it has the characteristics at the same time. The second component,
Although the third component is shown only for some combinations in the embodiments, any component may be used as long as it is within the range of simultaneously having varistor characteristics and capacitor characteristics as the element characteristics. Zn is used as the ohmic electrode.
Other than these, there are Ag, Cu, Ni and the like, but any other material may be used as long as ohmic contact can be made at the interface between the element and the electrode. Also, only a part of the components to be plated and the combination thereof are shown, but the components and combinations other than these are not limited to these as long as similar effects can be obtained. The plating method may be electrolytic or electroless, acidic plating, basic plating or neutral plating. Further, it is possible to improve the noise removing effect by connecting the voltage-dependent nonlinear resistor porcelain element to an inductance such as a ferrite, a coil, a toroidal coil.

【0024】[0024]

【発明の効果】以上に示したように本発明によれば、円
筒の内周電極が一つの電極として一体化されるため、ピ
ンと素子の隙間に半田などの導電性接続部材が流れ込ん
でも一体化された電極の上であるため、見掛けの電極間
距離は変化しない。
As described above, according to the present invention, since the cylindrical inner peripheral electrode is integrated as one electrode, it is integrated even if a conductive connecting member such as solder flows into the gap between the pin and the element. The apparent inter-electrode distance does not change because it is on the separated electrodes.

【0025】従って電気的特性は安定でバリスタ電圧が
変化せず、バリスタ電圧に極性はつかず絶縁抵抗は変化
しない。また、円筒の外周径が小さい部分全体に他方の
電極を設けると共に、大きい径の円筒の外周径が小さい
円筒部分に接するドーナツ状の平面に他方の電極を設け
たことにより、共通端子を導電性接続部材などで接続す
る場合、接触する面積が大きくなり接続が容易で、共通
端子の上下二方向から接続することができるため、共通
端子と素子の間の接着力を強くすることができ、機械的
強度を向上させることができるとともに、特に温度サイ
クル試験による特性の劣化を小さくすることができ、信
頼性を向上させることができる。
Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, and the insulation resistance does not change. In addition, the other electrode is provided on the entire portion of the cylinder with a small outer diameter, and the other electrode is provided on the doughnut-shaped flat surface in contact with the portion of the large diameter cylinder with a small outer diameter. When connecting with a connecting member, etc., the contact area is large and connection is easy, and since it is possible to connect from the upper and lower sides of the common terminal, it is possible to increase the adhesive force between the common terminal and the element. In addition to improving the mechanical strength, it is possible to reduce the deterioration of the characteristics due to the temperature cycle test and improve the reliability.

【0026】さらに、円筒の外周径が小さい部分全体に
他方の電極を設けることにより、外周電極を共通端子に
半田などの導電性接続部材で接続した場合、接続が容易
で接着力が大きくできるとともに、余分な半田や導電性
接着剤などのたれを前記全体が円筒形で円筒の一方の端
子が他の部分より大きい径の円筒状部分で止めることに
より、見掛けの電極間距離は変化しないようにすること
ができる。また仮に半田や導電性接着剤などがたれ込ん
でも他方の電極から離れる方向にたれ込むことから、見
掛けの電極間距離は変化しない。
Furthermore, by providing the other electrode on the entire portion of the cylinder having a small outer diameter, when the outer electrode is connected to the common terminal by a conductive connecting member such as solder, the connection is easy and the adhesive force can be increased. To prevent the apparent inter-electrode distance from changing by stopping the sagging of excess solder or conductive adhesive at the cylindrical part where the whole is cylindrical and one terminal of the cylinder is larger in diameter than the other part. can do. Even if the solder, the conductive adhesive, or the like drips, the apparent distance between the electrodes does not change because the drips in the direction away from the other electrode.

【0027】しかも全体が円筒形で円筒の一方の端部が
他の部分より大きい径の円筒状部分を設けることによ
り、表面絶縁距離を広くとることができるため電気的特
性は安定でバリスタ電圧は変化せずバリスタ電圧に極性
はつかず絶縁抵抗は変化せず、素子をコネクタに組み立
てても組立て前後の特性の変化は極めて小さく安定にな
るという効果が得られ、課電寿命特性を改善することが
でき、信頼性を向上させることができる。
Moreover, by providing a cylindrical portion having a whole cylindrical shape and one end of the cylinder having a diameter larger than that of the other portion, the surface insulation distance can be widened so that the electrical characteristics are stable and the varistor voltage is small. The varistor voltage does not change, the polarity does not change, the insulation resistance does not change, and even if the element is assembled into the connector, the change in the characteristics before and after assembly is extremely small and stable, and it is possible to improve the life span characteristics. Therefore, the reliability can be improved.

【0028】また、内周電極及び外周電極,共通端子の
最上層を半田メッキにすることにより、例えばピンと内
周電極の隙間や外周電極と共通端子の隙間を小さくして
おけば、導電性接着剤がなくても加熱処理するだけで、
内周電極及び外周電極,共通端子の最上層の半田メッキ
が互いに溶融して接続させることができる。
If the uppermost layers of the inner and outer peripheral electrodes and the common terminal are plated with solder, for example, the gap between the pin and the inner peripheral electrode and the gap between the outer peripheral electrode and the common terminal can be made small, the conductive bonding can be achieved. Even if there is no agent, just heat treatment,
The innermost electrode, the outermost electrode, and the solder plating of the uppermost layer of the common terminal can be melted and connected to each other.

【0029】さらに、素子の電気的特性を十分に引き出
すためにはCuメッキ,Niメッキ,Crメッキ,Sn
メッキ,Pbメッキ,Auメッキ,Agメッキ,Pdメ
ッキ,半田メッキのうちの少なくとも1つを重ねた構成
にすることにより、素子と電極の界面にバリヤーを形成
することなく素子の電気的特性を十分に引き出すことが
できるとともに、容易に半田付けでき、さらに複数の種
類の多層メッキ構造にすることにより半田耐熱性を向上
させることができる。また、素子の形状を円筒状にする
ことにより素子の長さは長くなるが、素子の半径方向に
は寸法を小さくできるため、コネクタのピン間隔を小さ
くすることが可能で、コネクタを小型化するのに有効で
ある。
Further, in order to sufficiently bring out the electrical characteristics of the element, Cu plating, Ni plating, Cr plating, Sn
By stacking at least one of plating, Pb plating, Au plating, Ag plating, Pd plating, and solder plating, the electric characteristics of the element can be sufficiently improved without forming a barrier at the interface between the element and the electrode. In addition, the solder heat resistance can be improved by adopting a multi-layered plating structure of a plurality of types. Further, although the length of the element is increased by making the element cylindrical, the size of the element can be reduced in the radial direction, so that the pin interval of the connector can be reduced and the connector can be miniaturized. It is effective for

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による電圧依存性非直線抵抗
体磁器素子を示す断面図
FIG. 1 is a cross-sectional view showing a voltage-dependent nonlinear resistor ceramic element according to an embodiment of the present invention.

【図2】同素子をコネクタに組み立てた時の断面図FIG. 2 is a cross-sectional view when the same element is assembled into a connector.

【図3】従来の電圧依存性非直線抵抗体磁器素子を示す
断面図
FIG. 3 is a cross-sectional view showing a conventional voltage-dependent nonlinear resistor ceramic element.

【図4】同素子をコネクタに組み立てた時の断面図FIG. 4 is a cross-sectional view when the same element is assembled into a connector.

【符号の説明】[Explanation of symbols]

11 内周電極 12 外周電極 13 素子 11 inner peripheral electrode 12 outer peripheral electrode 13 element

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】SrTiO3を主成分とした電圧依存性非
直線抵抗特性を有する半導体セラミックを全体が円筒形
でかつ円筒の一方の端部が他の部分より大きい径の円筒
状をなすとともに前記大きい径の円筒の長さが他の部分
よりも短く前記全体の円筒の中央部に円筒状の貫通孔を
有するように形成し、かつ前記円筒の内周面全体に一方
の電極を設けるとともに、前記円筒の外周径が小さい部
分の外周面全体及び前記大きい径の円筒の前記円筒の外
周径が小さい円筒部分に接するドーナツ状の平面に他方
の電極を設けたことを特徴とする電圧依存性非直線抵抗
体磁器素子。
1. A semiconductor ceramic comprising SrTiO 3 as a main component and having a voltage-dependent nonlinear resistance characteristic, which has a cylindrical shape as a whole, and one end of which has a diameter larger than that of the other portion. A cylinder having a large diameter is formed to have a cylindrical through hole in the central portion of the entire cylinder having a shorter length than other portions, and with one electrode provided on the entire inner peripheral surface of the cylinder, The other electrode is provided on a doughnut-shaped flat surface that is in contact with the entire outer peripheral surface of the portion having a small outer diameter of the cylinder and the cylindrical portion having a small outer diameter of the cylinder of the large diameter cylinder. Linear resistor porcelain element.
【請求項2】電極は、下地がオーミック性電極で、上地
が非オーミック性電極であることを特徴とする請求項1
記載の電圧依存性非直線抵抗体磁器素子。
2. The electrode is characterized in that the base is an ohmic electrode and the upper layer is a non-ohmic electrode.
The voltage-dependent nonlinear resistor porcelain element described.
【請求項3】電極は、下地がオーミック性電極で、上地
がCuメッキ,Niメッキ,Crメッキ,Snメッキ,
Pbメッキ,Auメッキ,Agメッキ,Pdメッキ,半
田メッキのうちの少なくとも1つを重ねたものであるこ
とを特徴とする請求項1記載の電圧依存性非直線抵抗体
磁器素子。
3. An electrode is an ohmic electrode as a base, and an upper layer is Cu-plated, Ni-plated, Cr-plated, Sn-plated,
2. The voltage-dependent nonlinear resistor ceramic element according to claim 1, wherein at least one of Pb plating, Au plating, Ag plating, Pd plating, and solder plating is laminated.
【請求項4】電極は、Cuメッキ,Niメッキ,Crメ
ッキ,Snメッキ,Pbメッキ,Auメッキ,Agメッ
キ,Pdメッキ,半田メッキのうちの少なくとも1つを
重ねたものであることを特徴とする請求項1記載の電圧
依存性非直線抵抗体磁器素子。
4. The electrode is formed by stacking at least one of Cu plating, Ni plating, Cr plating, Sn plating, Pb plating, Au plating, Ag plating, Pd plating, and solder plating. The voltage-dependent nonlinear resistor porcelain element according to claim 1.
【請求項5】電極は最上層が半田メッキであることを特
徴とする請求項1記載の電圧依存性非直線抵抗体磁器素
子。
5. The voltage-dependent nonlinear resistor porcelain element according to claim 1, wherein the uppermost layer of the electrode is solder plating.
【請求項6】主成分のSrの一部をCa,Ba,Mgの
うち少なくとも一つ以上の元素で置換したことを特徴と
する請求項1記載の電圧依存性非直線抵抗体磁器素子。
6. The voltage-dependent nonlinear resistor porcelain element according to claim 1, wherein a part of Sr as a main component is replaced with at least one element of Ca, Ba and Mg.
JP3269204A 1991-10-17 1991-10-17 Voltage-dependent nonlinear resistor porcelain element Expired - Fee Related JP2882128B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3269204A JP2882128B2 (en) 1991-10-17 1991-10-17 Voltage-dependent nonlinear resistor porcelain element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3269204A JP2882128B2 (en) 1991-10-17 1991-10-17 Voltage-dependent nonlinear resistor porcelain element

Publications (2)

Publication Number Publication Date
JPH05109507A true JPH05109507A (en) 1993-04-30
JP2882128B2 JP2882128B2 (en) 1999-04-12

Family

ID=17469126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3269204A Expired - Fee Related JP2882128B2 (en) 1991-10-17 1991-10-17 Voltage-dependent nonlinear resistor porcelain element

Country Status (1)

Country Link
JP (1) JP2882128B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016171257A1 (en) * 2015-04-24 2016-10-27 Littelfuseジャパン合同会社 Protection element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016171257A1 (en) * 2015-04-24 2016-10-27 Littelfuseジャパン合同会社 Protection element
EP3288042A4 (en) * 2015-04-24 2018-12-05 Littelfuse Japan G.K. Protection element

Also Published As

Publication number Publication date
JP2882128B2 (en) 1999-04-12

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