JPH04958B2 - - Google Patents
Info
- Publication number
- JPH04958B2 JPH04958B2 JP58208005A JP20800583A JPH04958B2 JP H04958 B2 JPH04958 B2 JP H04958B2 JP 58208005 A JP58208005 A JP 58208005A JP 20800583 A JP20800583 A JP 20800583A JP H04958 B2 JPH04958 B2 JP H04958B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- reaction chamber
- diamond film
- plasma
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 claims description 38
- 229910003460 diamond Inorganic materials 0.000 claims description 37
- 229930195733 hydrocarbon Natural products 0.000 claims description 17
- 150000002430 hydrocarbons Chemical class 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000004215 Carbon black (E152) Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000012808 vapor phase Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58208005A JPS60103098A (ja) | 1983-11-04 | 1983-11-04 | ダイヤモンド膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58208005A JPS60103098A (ja) | 1983-11-04 | 1983-11-04 | ダイヤモンド膜の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31156392A Division JPH0742198B2 (ja) | 1992-11-20 | 1992-11-20 | ダイヤモンド膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60103098A JPS60103098A (ja) | 1985-06-07 |
| JPH04958B2 true JPH04958B2 (de) | 1992-01-09 |
Family
ID=16549090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58208005A Granted JPS60103098A (ja) | 1983-11-04 | 1983-11-04 | ダイヤモンド膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60103098A (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6265997A (ja) * | 1985-09-18 | 1987-03-25 | Nippon Soken Inc | ダイヤモンド合成方法およびその装置 |
| US6677001B1 (en) * | 1986-11-10 | 2004-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD method and apparatus |
| US5433788A (en) * | 1987-01-19 | 1995-07-18 | Hitachi, Ltd. | Apparatus for plasma treatment using electron cyclotron resonance |
| KR900008505B1 (ko) * | 1987-02-24 | 1990-11-24 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | 탄소 석출을 위한 마이크로파 강화 cvd 방법 |
| US4882138A (en) * | 1987-03-30 | 1989-11-21 | Crystallume | Method for preparation of diamond ceramics |
| US5075095A (en) * | 1987-03-30 | 1991-12-24 | Crystallume | Method for preparation of diamond ceramics |
| JPH0672306B2 (ja) | 1987-04-27 | 1994-09-14 | 株式会社半導体エネルギー研究所 | プラズマ処理装置およびプラズマ処理方法 |
| US6224952B1 (en) | 1988-03-07 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US5190824A (en) | 1988-03-07 | 1993-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating |
| US5104634A (en) * | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
| JPH0317274A (ja) * | 1990-06-01 | 1991-01-25 | Semiconductor Energy Lab Co Ltd | 被膜形成方法 |
| KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
| US5427827A (en) * | 1991-03-29 | 1995-06-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Deposition of diamond-like films by ECR microwave plasma |
| JPH07122137B2 (ja) * | 1991-03-29 | 1995-12-25 | 株式会社島津製作所 | 硬質カーボン膜形成方法 |
-
1983
- 1983-11-04 JP JP58208005A patent/JPS60103098A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60103098A (ja) | 1985-06-07 |
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