JPH0482844U - - Google Patents
Info
- Publication number
- JPH0482844U JPH0482844U JP12793290U JP12793290U JPH0482844U JP H0482844 U JPH0482844 U JP H0482844U JP 12793290 U JP12793290 U JP 12793290U JP 12793290 U JP12793290 U JP 12793290U JP H0482844 U JPH0482844 U JP H0482844U
- Authority
- JP
- Japan
- Prior art keywords
- via hole
- semiconductor device
- chip
- pattern
- indicates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
Landscapes
- Junction Field-Effect Transistors (AREA)
Description
第１図はこの考案の一実施例である半導体装置
の単一チツプパターンを示す平面図、第２図は第
１図の単一チツプパターンを複数個繰返し形成し
た場合の平面図、第３図は第１図の実施例の優位
性を説明するための他の実施例を示す平面図、第
４図は従来のＧａＡｓ ＦＥＴの斜視図、第５図
は第４図の平面図である。
図において、１はソース電極、２はゲート電極
、３はドレイン電極、６はビア・ホール、８は突
起部を示す。なお、図中、同一符号は同一、また
は相当部分を示す。
FIG. 1 is a plan view showing a single chip pattern of a semiconductor device which is an embodiment of this invention, FIG. 2 is a plan view of a case where the single chip pattern shown in FIG. 1 is repeatedly formed, and FIG. 4 is a perspective view of a conventional GaAs FET, and FIG. 5 is a plan view of FIG. 4. FIG. 4 is a perspective view of a conventional GaAs FET. In the figure, 1 is a source electrode, 2 is a gate electrode, 3 is a drain electrode, 6 is a via hole, and 8 is a protrusion. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
補正 平３．６．１４
図面の簡単な説明を次のように補正する。
明細書第７頁第７行〜第８行の「６はビア・ホ
ール、８は突起部を示す。」を「６ビア・ホール
、７はクラツク、８は突起部を示す。」と訂正す
る。Amendment 3/6/14 The brief description of the drawing is amended as follows. "6 indicates a via hole, 8 indicates a protrusion" on page 7, lines 7 to 8 of the specification is corrected to "6 indicates a via hole, 7 indicates a crack, and 8 indicates a protrusion." .
Claims (1)
、前記ビア・ホール部と対向するチツプ端面部が
他の部分より突出して突起部を形成され、前記半
導体チツプを複数個繰返し作成するマスクパター
ンが隣接する対の前記チツプパターンの突起部を
互い違いに作成したことを特徴とする半導体装置
。 In a semiconductor device having a via hole structure, an end face portion of the chip facing the via hole portion protrudes from other portions to form a protruding portion, and a mask pattern for repeatedly forming a plurality of semiconductor chips is formed between adjacent pairs. A semiconductor device characterized in that the protrusions of the chip pattern are formed alternately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12793290U JPH0482844U (en) | 1990-11-28 | 1990-11-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12793290U JPH0482844U (en) | 1990-11-28 | 1990-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0482844U true JPH0482844U (en) | 1992-07-20 |
Family
ID=31875414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12793290U Pending JPH0482844U (en) | 1990-11-28 | 1990-11-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0482844U (en) |
-
1990
- 1990-11-28 JP JP12793290U patent/JPH0482844U/ja active Pending