JPH0479993B2 - - Google Patents
Info
- Publication number
- JPH0479993B2 JPH0479993B2 JP11843886A JP11843886A JPH0479993B2 JP H0479993 B2 JPH0479993 B2 JP H0479993B2 JP 11843886 A JP11843886 A JP 11843886A JP 11843886 A JP11843886 A JP 11843886A JP H0479993 B2 JPH0479993 B2 JP H0479993B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- semiconductor
- layer
- growing
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 82
- 239000004065 semiconductor Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000007787 solid Substances 0.000 claims description 14
- 238000010899 nucleation Methods 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11843886A JPS62278187A (ja) | 1986-05-24 | 1986-05-24 | 半導体単結晶層の成長方法 |
| EP87103146A EP0235819B1 (en) | 1986-03-07 | 1987-03-05 | Process for producing single crystal semiconductor layer |
| DE8787103146T DE3779672T2 (de) | 1986-03-07 | 1987-03-05 | Verfahren zum herstellen einer monokristallinen halbleiterschicht. |
| US07/022,717 US4822752A (en) | 1986-03-07 | 1987-03-06 | Process for producing single crystal semiconductor layer and semiconductor device produced by said process |
| US07/587,500 US5371381A (en) | 1986-03-07 | 1990-09-24 | Process for producing single crystal semiconductor layer and semiconductor device produced by said process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11843886A JPS62278187A (ja) | 1986-05-24 | 1986-05-24 | 半導体単結晶層の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62278187A JPS62278187A (ja) | 1987-12-03 |
| JPH0479993B2 true JPH0479993B2 (enrdf_load_stackoverflow) | 1992-12-17 |
Family
ID=14736638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11843886A Granted JPS62278187A (ja) | 1986-03-07 | 1986-05-24 | 半導体単結晶層の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62278187A (enrdf_load_stackoverflow) |
-
1986
- 1986-05-24 JP JP11843886A patent/JPS62278187A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62278187A (ja) | 1987-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4822752A (en) | Process for producing single crystal semiconductor layer and semiconductor device produced by said process | |
| Biegelsen et al. | Laser‐induced crystallization of silicon islands on amorphous substrates: Multilayer structures | |
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| US4861418A (en) | Method of manufacturing semiconductor crystalline layer | |
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| JPS62206815A (ja) | 半導体ウエハ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |