JPH0478210B2 - - Google Patents

Info

Publication number
JPH0478210B2
JPH0478210B2 JP61255022A JP25502286A JPH0478210B2 JP H0478210 B2 JPH0478210 B2 JP H0478210B2 JP 61255022 A JP61255022 A JP 61255022A JP 25502286 A JP25502286 A JP 25502286A JP H0478210 B2 JPH0478210 B2 JP H0478210B2
Authority
JP
Japan
Prior art keywords
region
concentration impurity
photovoltaic
transistor
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61255022A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6399616A (ja
Inventor
Shigeo Akyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Publication of JPS6399616A publication Critical patent/JPS6399616A/ja
Publication of JPH0478210B2 publication Critical patent/JPH0478210B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Element Separation (AREA)
JP61255022A 1986-03-24 1986-10-27 固体リレ−及びその製造方法 Granted JPS6399616A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-68112 1986-03-24
JP6811286 1986-03-24
JP61-139911 1986-06-16

Publications (2)

Publication Number Publication Date
JPS6399616A JPS6399616A (ja) 1988-04-30
JPH0478210B2 true JPH0478210B2 (cs) 1992-12-10

Family

ID=13364329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61255022A Granted JPS6399616A (ja) 1986-03-24 1986-10-27 固体リレ−及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6399616A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013102445A (ja) * 2012-12-10 2013-05-23 Toshiba Corp ゲート駆動回路、およびパワー半導体モジュール

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910738A (en) * 1995-04-07 1999-06-08 Kabushiki Kaisha Toshiba Driving circuit for driving a semiconductor device at high speed and method of operating the same
US6037602A (en) * 1998-02-13 2000-03-14 C.P. Clare Corporation Photovoltaic generator circuit and method of making same
US6806457B2 (en) * 2001-09-28 2004-10-19 Tai-Her Yang Transistor photoelectric conversion drive circuit
JP4528321B2 (ja) * 2007-09-26 2010-08-18 シャープ株式会社 スイッチング回路、回路、並びにスイッチング回路及び駆動パルス生成回路を含む回路
EP2320544B1 (en) * 2008-08-21 2019-02-20 Mitsubishi Electric Corporation Driving circuit for power semiconductor element
DE102017007683B4 (de) * 2017-08-16 2020-05-07 Azur Space Solar Power Gmbh Empfängerbaustein
CN108418411A (zh) * 2018-03-16 2018-08-17 上海艾为电子技术股份有限公司 软启动电路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629458B2 (cs) * 1973-07-02 1981-07-08
JPS5156168A (ja) * 1974-11-13 1976-05-17 Fujitsu Ltd Parusuhatsuseikairo
JPS5849103B2 (ja) * 1976-06-16 1983-11-01 三菱電機株式会社 サイリスタのゲ−ト回路
JPS5368066A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Semiconductor switch
JPS59172B2 (ja) * 1978-06-19 1984-01-05 日本電信電話株式会社 電界効果トランジスタの駆動回路
JPS553259A (en) * 1978-06-21 1980-01-11 Fujitsu Ltd Switching circuit
JPS5529972U (cs) * 1978-08-16 1980-02-27
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
JPS57192129A (en) * 1981-05-21 1982-11-26 Omron Tateisi Electronics Co Semiconductor relay
JPS5821920A (ja) * 1981-07-31 1983-02-09 Fujitsu Ltd パルス増幅回路
US4492883A (en) * 1982-06-21 1985-01-08 Eaton Corporation Unpowered fast gate turn-off FET
JPS5955627A (ja) * 1982-09-24 1984-03-30 Sanyo Electric Co Ltd Ｍｏｓ回路
JPS59188935A (ja) * 1983-04-12 1984-10-26 Nec Corp 誘電体分離型半導体装置及びその製造方法
JPS60119124A (ja) * 1983-11-30 1985-06-26 Matsushita Electric Works Ltd 電界効果型のトランジスタの駆動回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013102445A (ja) * 2012-12-10 2013-05-23 Toshiba Corp ゲート駆動回路、およびパワー半導体モジュール

Also Published As

Publication number Publication date
JPS6399616A (ja) 1988-04-30

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