JPH0478186B2 - - Google Patents

Info

Publication number
JPH0478186B2
JPH0478186B2 JP60292969A JP29296985A JPH0478186B2 JP H0478186 B2 JPH0478186 B2 JP H0478186B2 JP 60292969 A JP60292969 A JP 60292969A JP 29296985 A JP29296985 A JP 29296985A JP H0478186 B2 JPH0478186 B2 JP H0478186B2
Authority
JP
Japan
Prior art keywords
semiconductor region
region
semiconductor
voltage
surge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60292969A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62154776A (ja
Inventor
Yutaka Hayashi
Masaaki Sato
Juji Muramatsu
Hiroaki Yoshihara
Teiji Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60292969A priority Critical patent/JPS62154776A/ja
Publication of JPS62154776A publication Critical patent/JPS62154776A/ja
Priority to US07/488,457 priority patent/US5083185A/en
Publication of JPH0478186B2 publication Critical patent/JPH0478186B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP60292969A 1985-02-15 1985-12-27 サ−ジ吸収素子 Granted JPS62154776A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60292969A JPS62154776A (ja) 1985-12-27 1985-12-27 サ−ジ吸収素子
US07/488,457 US5083185A (en) 1985-02-15 1990-02-26 Surge absorption device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60292969A JPS62154776A (ja) 1985-12-27 1985-12-27 サ−ジ吸収素子

Publications (2)

Publication Number Publication Date
JPS62154776A JPS62154776A (ja) 1987-07-09
JPH0478186B2 true JPH0478186B2 (enrdf_load_stackoverflow) 1992-12-10

Family

ID=17788768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60292969A Granted JPS62154776A (ja) 1985-02-15 1985-12-27 サ−ジ吸収素子

Country Status (1)

Country Link
JP (1) JPS62154776A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183849A (ja) * 1988-01-19 1989-07-21 Fuji Electric Co Ltd 双方向性スイッチング素子
JP2822395B2 (ja) * 1988-09-20 1998-11-11 ソニー株式会社 Ｃｃｄ
JP2614153B2 (ja) * 1991-04-18 1997-05-28 工業技術院長 サージ防護デバイスにおけるブレーク・オーバ電流または保持電流に関する設計仕様値からの誤差低減方法

Also Published As

Publication number Publication date
JPS62154776A (ja) 1987-07-09

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