JPH0478032B2 - - Google Patents

Info

Publication number
JPH0478032B2
JPH0478032B2 JP58003976A JP397683A JPH0478032B2 JP H0478032 B2 JPH0478032 B2 JP H0478032B2 JP 58003976 A JP58003976 A JP 58003976A JP 397683 A JP397683 A JP 397683A JP H0478032 B2 JPH0478032 B2 JP H0478032B2
Authority
JP
Japan
Prior art keywords
region
type
resistance
striped
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58003976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59127883A (ja
Inventor
Masanobu Takasuka
Hakobu Myoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58003976A priority Critical patent/JPS59127883A/ja
Publication of JPS59127883A publication Critical patent/JPS59127883A/ja
Publication of JPH0478032B2 publication Critical patent/JPH0478032B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP58003976A 1983-01-12 1983-01-12 感光半導体装置 Granted JPS59127883A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58003976A JPS59127883A (ja) 1983-01-12 1983-01-12 感光半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58003976A JPS59127883A (ja) 1983-01-12 1983-01-12 感光半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004045A Division JPH02224281A (ja) 1990-01-11 1990-01-11 入射位置検出用半導体装置

Publications (2)

Publication Number Publication Date
JPS59127883A JPS59127883A (ja) 1984-07-23
JPH0478032B2 true JPH0478032B2 (enrdf_load_stackoverflow) 1992-12-10

Family

ID=11572081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58003976A Granted JPS59127883A (ja) 1983-01-12 1983-01-12 感光半導体装置

Country Status (1)

Country Link
JP (1) JPS59127883A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037413B1 (en) 1996-03-11 2006-05-02 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691278B2 (ja) * 1986-03-04 1994-11-14 浜松ホトニクス株式会社 半導体位置検出装置
JPH0783133B2 (ja) * 1987-07-22 1995-09-06 松下電子工業株式会社 光半導体装置
JPS6446987A (en) * 1987-08-17 1989-02-21 Hamamatsu Photonics Kk Semiconductor position detector
JPH07118550B2 (ja) * 1987-09-02 1995-12-18 富士電機株式会社 光位置検出素子
WO1989006052A1 (en) * 1987-12-14 1989-06-29 Santa Barbara Research Center Reticulated junction photodiode having enhanced responsivity to short wavelength radiation
JP2524708Y2 (ja) * 1990-11-26 1997-02-05 シャープ株式会社 ポジションセンサ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5072591A (enrdf_load_stackoverflow) * 1973-10-29 1975-06-16
JPS52124889A (en) * 1976-04-12 1977-10-20 Matsushita Electronics Corp Semiconductor photoelectric transducer
JPS5917288A (ja) * 1982-07-20 1984-01-28 Hamamatsu Tv Kk 入射位置検出用半導体装置
MC1716A1 (fr) * 1985-08-12 1986-09-22 Toutelectric Positionneur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037413B1 (en) 1996-03-11 2006-05-02 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information

Also Published As

Publication number Publication date
JPS59127883A (ja) 1984-07-23

Similar Documents

Publication Publication Date Title
JPH04217363A (ja) 隣接する光検出領域間の光学的漏話の制御
JPS60154579A (ja) 半導体装置
JPH0117268B2 (enrdf_load_stackoverflow)
JPH0478032B2 (enrdf_load_stackoverflow)
US4129878A (en) Multi-element avalanche photodiode having reduced electrical noise
DE3637817C2 (enrdf_load_stackoverflow)
US4998155A (en) Radiation-hardened semiconductor device with surface layer
JPS646547B2 (enrdf_load_stackoverflow)
GB2051479A (en) Light-controllable transistor
JP3718223B2 (ja) 縦の溝を有する高電圧用の半導体デバイス
JPH0527997B2 (enrdf_load_stackoverflow)
JP5320610B2 (ja) マイクロチャネル・アバランシェ・フォトダイオード（変形物）
JPH02224281A (ja) 入射位置検出用半導体装置
US20040089907A1 (en) Position sensitive photo detector
JP4046995B2 (ja) 光半導体装置
KR940001293B1 (ko) 반도체 광 검출장치
JPS61231776A (ja) 光検知半導体装置
JPH026232B2 (enrdf_load_stackoverflow)
JPH0658974B2 (ja) 半導体位置検出装置
JPH0251263A (ja) 半導体装置
JPH0783133B2 (ja) 光半導体装置
JP3967083B2 (ja) 半導体受光素子
JPH0543365Y2 (enrdf_load_stackoverflow)
JP5515444B2 (ja) 半導体受光装置
JP3080223B2 (ja) 半導体装置