JPH026232B2 - - Google Patents
Info
- Publication number
- JPH026232B2 JPH026232B2 JP56192848A JP19284881A JPH026232B2 JP H026232 B2 JPH026232 B2 JP H026232B2 JP 56192848 A JP56192848 A JP 56192848A JP 19284881 A JP19284881 A JP 19284881A JP H026232 B2 JPH026232 B2 JP H026232B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- channel region
- optical trigger
- semiconductor substrate
- trigger signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192848A JPS5895866A (ja) | 1981-12-02 | 1981-12-02 | 光トリガ・スイツチング素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192848A JPS5895866A (ja) | 1981-12-02 | 1981-12-02 | 光トリガ・スイツチング素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5895866A JPS5895866A (ja) | 1983-06-07 |
| JPH026232B2 true JPH026232B2 (enrdf_load_stackoverflow) | 1990-02-08 |
Family
ID=16297974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56192848A Granted JPS5895866A (ja) | 1981-12-02 | 1981-12-02 | 光トリガ・スイツチング素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5895866A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3338234B2 (ja) * | 1995-05-17 | 2002-10-28 | 三菱電機株式会社 | 光トリガサイリスタ及びその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5320885A (en) * | 1976-08-11 | 1978-02-25 | Semiconductor Res Found | Electrostatic induction type semiconductor device |
| JPS5924546B2 (ja) * | 1977-06-10 | 1984-06-09 | 株式会社日立製作所 | 電界効果型半導体スイツチング素子 |
| JPS5460881A (en) * | 1977-10-24 | 1979-05-16 | Mitsubishi Electric Corp | Optical action type semiconductor device |
| JPS54106176A (en) * | 1978-02-08 | 1979-08-20 | Hitachi Ltd | Field effect switching element |
| JPS6013310B2 (ja) * | 1979-03-15 | 1985-04-06 | 三菱電機株式会社 | 半導体装置 |
| JPS55128870A (en) * | 1979-03-26 | 1980-10-06 | Semiconductor Res Found | Electrostatic induction thyristor and semiconductor device |
-
1981
- 1981-12-02 JP JP56192848A patent/JPS5895866A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5895866A (ja) | 1983-06-07 |
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