JPH0477710B2 - - Google Patents
Info
- Publication number
- JPH0477710B2 JPH0477710B2 JP62220437A JP22043787A JPH0477710B2 JP H0477710 B2 JPH0477710 B2 JP H0477710B2 JP 62220437 A JP62220437 A JP 62220437A JP 22043787 A JP22043787 A JP 22043787A JP H0477710 B2 JPH0477710 B2 JP H0477710B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- thermal plasma
- nozzle
- diamond
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 claims description 51
- 239000007789 gas Substances 0.000 claims description 46
- 229910003460 diamond Inorganic materials 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 239000012808 vapor phase Substances 0.000 claims description 15
- 150000001722 carbon compounds Chemical class 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 238000003786 synthesis reaction Methods 0.000 claims description 12
- 238000010891 electric arc Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000001308 synthesis method Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001868 water Inorganic materials 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 208000018459 dissociative disease Diseases 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- -1 as shown in Fig. 3 Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62220437A JPS6433096A (en) | 1987-04-03 | 1987-09-04 | Gaseous phase synthesis for diamond |
| EP88302836A EP0286306B1 (en) | 1987-04-03 | 1988-03-30 | Method and apparatus for vapor deposition of diamond |
| DE88302836T DE3884653T2 (de) | 1987-04-03 | 1988-03-30 | Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant. |
| SU884355493A RU2032765C1 (ru) | 1987-04-03 | 1988-04-01 | Способ нанесения алмазного покрытия из паровой фазы и устройство для его осуществления |
| KR1019880003737A KR910006784B1 (ko) | 1987-04-03 | 1988-04-02 | 다이어몬드 증착장치와 방법 |
| US07/177,504 US5368897A (en) | 1987-04-03 | 1988-04-04 | Method for arc discharge plasma vapor deposition of diamond |
| US07/905,226 US5403399A (en) | 1987-04-03 | 1992-06-29 | Method and apparatus for vapor deposition of diamond |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8331887 | 1987-04-03 | ||
| JP62220437A JPS6433096A (en) | 1987-04-03 | 1987-09-04 | Gaseous phase synthesis for diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6433096A JPS6433096A (en) | 1989-02-02 |
| JPH0477710B2 true JPH0477710B2 (ko) | 1992-12-09 |
Family
ID=26424365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62220437A Granted JPS6433096A (en) | 1987-04-03 | 1987-09-04 | Gaseous phase synthesis for diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6433096A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2019035438A1 (ja) * | 2017-08-15 | 2020-09-03 | 住友電気工業株式会社 | 固体炭素含有材料加工体、その製造方法およびその製造装置 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990005701A1 (en) * | 1988-11-16 | 1990-05-31 | Andrew Carey Good | Diamond production |
| US5356672A (en) * | 1990-05-09 | 1994-10-18 | Jet Process Corporation | Method for microwave plasma assisted supersonic gas jet deposition of thin films |
| US5256205A (en) * | 1990-05-09 | 1993-10-26 | Jet Process Corporation | Microwave plasma assisted supersonic gas jet deposition of thin film materials |
| JP2938552B2 (ja) * | 1990-10-17 | 1999-08-23 | 富士通株式会社 | コーティング膜の製造方法およびコーティング膜の製造装置 |
| JP2840699B2 (ja) * | 1990-12-12 | 1998-12-24 | 株式会社 半導体エネルギー研究所 | 被膜形成装置及び被膜形成方法 |
| EP0491521B1 (en) * | 1990-12-15 | 1997-03-12 | Fujitsu Limited | Process for producing diamond film |
| US5356673A (en) * | 1991-03-18 | 1994-10-18 | Jet Process Corporation | Evaporation system and method for gas jet deposition of thin film materials |
| US5565249A (en) * | 1992-05-07 | 1996-10-15 | Fujitsu Limited | Method for producing diamond by a DC plasma jet |
| US5571332A (en) * | 1995-02-10 | 1996-11-05 | Jet Process Corporation | Electron jet vapor deposition system |
| CN102015529B (zh) * | 2008-02-28 | 2014-04-30 | 巴斯夫欧洲公司 | 纳米石墨片和组合物 |
| US9217195B2 (en) | 2011-04-20 | 2015-12-22 | Ntn Corporation | Amorphous carbon film and method for forming same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5930709A (ja) * | 1982-08-13 | 1984-02-18 | Toa Nenryo Kogyo Kk | 炭素膜及び／又は炭素粒子の製造方法 |
| JPS60118693A (ja) * | 1983-11-25 | 1985-06-26 | Mitsubishi Metal Corp | ダイヤモンドの低圧合成方法 |
| JPS60127299A (ja) * | 1983-12-14 | 1985-07-06 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
| JPS61183198A (ja) * | 1984-12-29 | 1986-08-15 | Kyocera Corp | ダイヤモンド膜の製法 |
| JPS61222915A (ja) * | 1985-03-29 | 1986-10-03 | Asahi Chem Ind Co Ltd | ダイヤモンドの気相合成方法 |
| JPS62158195A (ja) * | 1985-12-27 | 1987-07-14 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
-
1987
- 1987-09-04 JP JP62220437A patent/JPS6433096A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5930709A (ja) * | 1982-08-13 | 1984-02-18 | Toa Nenryo Kogyo Kk | 炭素膜及び／又は炭素粒子の製造方法 |
| JPS60118693A (ja) * | 1983-11-25 | 1985-06-26 | Mitsubishi Metal Corp | ダイヤモンドの低圧合成方法 |
| JPS60127299A (ja) * | 1983-12-14 | 1985-07-06 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
| JPS61183198A (ja) * | 1984-12-29 | 1986-08-15 | Kyocera Corp | ダイヤモンド膜の製法 |
| JPS61222915A (ja) * | 1985-03-29 | 1986-10-03 | Asahi Chem Ind Co Ltd | ダイヤモンドの気相合成方法 |
| JPS62158195A (ja) * | 1985-12-27 | 1987-07-14 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2019035438A1 (ja) * | 2017-08-15 | 2020-09-03 | 住友電気工業株式会社 | 固体炭素含有材料加工体、その製造方法およびその製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6433096A (en) | 1989-02-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071209 Year of fee payment: 15 |