JPH0476238B2 - - Google Patents
Info
- Publication number
- JPH0476238B2 JPH0476238B2 JP1493785A JP1493785A JPH0476238B2 JP H0476238 B2 JPH0476238 B2 JP H0476238B2 JP 1493785 A JP1493785 A JP 1493785A JP 1493785 A JP1493785 A JP 1493785A JP H0476238 B2 JPH0476238 B2 JP H0476238B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- light
- laser
- stem
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 95
- 238000012544 monitoring process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 description 8
- 238000003776 cleavage reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1493785A JPS61174688A (ja) | 1985-01-29 | 1985-01-29 | 半導体レ−ザ用発光性半導体チツプのダイボンデング位置設定方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1493785A JPS61174688A (ja) | 1985-01-29 | 1985-01-29 | 半導体レ−ザ用発光性半導体チツプのダイボンデング位置設定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61174688A JPS61174688A (ja) | 1986-08-06 |
JPH0476238B2 true JPH0476238B2 (de) | 1992-12-03 |
Family
ID=11874878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1493785A Granted JPS61174688A (ja) | 1985-01-29 | 1985-01-29 | 半導体レ−ザ用発光性半導体チツプのダイボンデング位置設定方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61174688A (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6340387A (ja) * | 1986-08-05 | 1988-02-20 | Sharp Corp | 半導体レ−ザ装置 |
JPH0746747B2 (ja) * | 1986-09-09 | 1995-05-17 | 松下電器産業株式会社 | 半導体レーザのボンディング方法 |
-
1985
- 1985-01-29 JP JP1493785A patent/JPS61174688A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61174688A (ja) | 1986-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5481082A (en) | Apparatus and method for die bonding semiconductor element | |
US6678292B2 (en) | Top contact VCSEL with monitor | |
US6970491B2 (en) | Planar and wafer level packaging of semiconductor lasers and photo detectors for transmitter optical sub-assemblies | |
US5881193A (en) | Low profile optical subassembly | |
US7139296B2 (en) | Semiconductor laser chip unit and semiconductor laser module using the same | |
US20200185877A1 (en) | Optical module | |
JPH02254783A (ja) | 半導体レーザ装置 | |
JPH0476238B2 (de) | ||
US6990262B2 (en) | Optical module | |
JPH0476518B2 (de) | ||
US20040141699A1 (en) | Optical module | |
EP1267459A1 (de) | Kühlkörper für Laser im Elektronikgehäuse | |
JP2970580B2 (ja) | 半導体チップ、光受信モジュールおよび光受信モジュールの製造方法 | |
JPH05183239A (ja) | 半導体レーザ装置 | |
JP3723249B2 (ja) | 半導体レーザ装置およびその製法 | |
JPS5979588A (ja) | 発光半導体装置 | |
JPS6154689A (ja) | 光半導体装置 | |
JPS61174689A (ja) | 電子部品用半導体チツプのダイボンデング位置設定方法 | |
KR100583651B1 (ko) | 광송신 모듈의 패키징 방법 | |
JP3771609B2 (ja) | 半導体レーザ装置及びその組立方法 | |
JPS6213088A (ja) | 発光半導体装置 | |
KR102091338B1 (ko) | 엘디 패키지 | |
JPS6381988A (ja) | 光電子装置 | |
JPS62188293A (ja) | 半導体レ−ザ装置 | |
JPS6015987A (ja) | 発光素子 |