JPH0475669B2 - - Google Patents

Info

Publication number
JPH0475669B2
JPH0475669B2 JP57009746A JP974682A JPH0475669B2 JP H0475669 B2 JPH0475669 B2 JP H0475669B2 JP 57009746 A JP57009746 A JP 57009746A JP 974682 A JP974682 A JP 974682A JP H0475669 B2 JPH0475669 B2 JP H0475669B2
Authority
JP
Japan
Prior art keywords
active layer
region
gate
anode
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57009746A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58127379A (ja
Inventor
Yasuhisa Oomura
Katsutoshi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57009746A priority Critical patent/JPS58127379A/ja
Publication of JPS58127379A publication Critical patent/JPS58127379A/ja
Publication of JPH0475669B2 publication Critical patent/JPH0475669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57009746A 1982-01-25 1982-01-25 絶縁ゲ−ト形トランジスタ Granted JPS58127379A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57009746A JPS58127379A (ja) 1982-01-25 1982-01-25 絶縁ゲ−ト形トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57009746A JPS58127379A (ja) 1982-01-25 1982-01-25 絶縁ゲ−ト形トランジスタ

Publications (2)

Publication Number Publication Date
JPS58127379A JPS58127379A (ja) 1983-07-29
JPH0475669B2 true JPH0475669B2 (cs) 1992-12-01

Family

ID=11728865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57009746A Granted JPS58127379A (ja) 1982-01-25 1982-01-25 絶縁ゲ−ト形トランジスタ

Country Status (1)

Country Link
JP (1) JPS58127379A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278771A (ja) * 1989-04-20 1990-11-15 Matsushita Electron Corp 薄膜トランジスタ
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
KR940022907A (ko) * 1993-03-31 1994-10-21 이헌조 비대칭 엘디디(ldd) 접합 박막트랜지스터

Also Published As

Publication number Publication date
JPS58127379A (ja) 1983-07-29

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