JPH0473611B2 - - Google Patents
Info
- Publication number
- JPH0473611B2 JPH0473611B2 JP20800885A JP20800885A JPH0473611B2 JP H0473611 B2 JPH0473611 B2 JP H0473611B2 JP 20800885 A JP20800885 A JP 20800885A JP 20800885 A JP20800885 A JP 20800885A JP H0473611 B2 JPH0473611 B2 JP H0473611B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- photoresist film
- forming
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 23
- 229920006254 polymer film Polymers 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 49
- 239000010410 layer Substances 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20800885A JPS6266634A (ja) | 1985-09-18 | 1985-09-18 | 微細パタ−ン形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20800885A JPS6266634A (ja) | 1985-09-18 | 1985-09-18 | 微細パタ−ン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6266634A JPS6266634A (ja) | 1987-03-26 |
JPH0473611B2 true JPH0473611B2 (ko) | 1992-11-24 |
Family
ID=16549140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20800885A Granted JPS6266634A (ja) | 1985-09-18 | 1985-09-18 | 微細パタ−ン形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6266634A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006101458A1 (en) * | 2005-03-22 | 2006-09-28 | National University Of Singapore | Method for patterning ferrelectric/piezoelectric films |
-
1985
- 1985-09-18 JP JP20800885A patent/JPS6266634A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6266634A (ja) | 1987-03-26 |
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