JPH0473312B2 - - Google Patents

Info

Publication number
JPH0473312B2
JPH0473312B2 JP58112169A JP11216983A JPH0473312B2 JP H0473312 B2 JPH0473312 B2 JP H0473312B2 JP 58112169 A JP58112169 A JP 58112169A JP 11216983 A JP11216983 A JP 11216983A JP H0473312 B2 JPH0473312 B2 JP H0473312B2
Authority
JP
Japan
Prior art keywords
film
electrode
resistance
photoelectric conversion
conversion member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58112169A
Other languages
English (en)
Japanese (ja)
Other versions
JPS604274A (ja
Inventor
Katsumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58112169A priority Critical patent/JPS604274A/ja
Publication of JPS604274A publication Critical patent/JPS604274A/ja
Publication of JPH0473312B2 publication Critical patent/JPH0473312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP58112169A 1983-06-22 1983-06-22 光電変換部材 Granted JPS604274A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58112169A JPS604274A (ja) 1983-06-22 1983-06-22 光電変換部材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58112169A JPS604274A (ja) 1983-06-22 1983-06-22 光電変換部材

Publications (2)

Publication Number Publication Date
JPS604274A JPS604274A (ja) 1985-01-10
JPH0473312B2 true JPH0473312B2 (enrdf_load_html_response) 1992-11-20

Family

ID=14579970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58112169A Granted JPS604274A (ja) 1983-06-22 1983-06-22 光電変換部材

Country Status (1)

Country Link
JP (1) JPS604274A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982246A (en) * 1989-06-21 1991-01-01 General Electric Company Schottky photodiode with silicide layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same
JPS558092A (en) * 1978-07-04 1980-01-21 Nec Corp Fine film solar cell and its production method
JPS5640284A (en) * 1979-09-10 1981-04-16 Matsushita Electric Ind Co Ltd Preparation of semiconductor heterojunction element
JPS55151329A (en) * 1979-05-14 1980-11-25 Shunpei Yamazaki Fabricating method of semiconductor device

Also Published As

Publication number Publication date
JPS604274A (ja) 1985-01-10

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