JPH0473311B2 - - Google Patents

Info

Publication number
JPH0473311B2
JPH0473311B2 JP58112168A JP11216883A JPH0473311B2 JP H0473311 B2 JPH0473311 B2 JP H0473311B2 JP 58112168 A JP58112168 A JP 58112168A JP 11216883 A JP11216883 A JP 11216883A JP H0473311 B2 JPH0473311 B2 JP H0473311B2
Authority
JP
Japan
Prior art keywords
film
electrode
photoelectric conversion
conversion member
ito
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58112168A
Other languages
English (en)
Japanese (ja)
Other versions
JPS604273A (ja
Inventor
Katsumi Suzuki
Yoshio Yamaoka
Hirobumi Sakashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58112168A priority Critical patent/JPS604273A/ja
Publication of JPS604273A publication Critical patent/JPS604273A/ja
Publication of JPH0473311B2 publication Critical patent/JPH0473311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP58112168A 1983-06-22 1983-06-22 光電変換部材 Granted JPS604273A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58112168A JPS604273A (ja) 1983-06-22 1983-06-22 光電変換部材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58112168A JPS604273A (ja) 1983-06-22 1983-06-22 光電変換部材

Publications (2)

Publication Number Publication Date
JPS604273A JPS604273A (ja) 1985-01-10
JPH0473311B2 true JPH0473311B2 (enrdf_load_html_response) 1992-11-20

Family

ID=14579943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58112168A Granted JPS604273A (ja) 1983-06-22 1983-06-22 光電変換部材

Country Status (1)

Country Link
JP (1) JPS604273A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236159A (ja) * 1985-04-12 1986-10-21 Ricoh Co Ltd 非晶質シリコン光センサ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same
JPS558092A (en) * 1978-07-04 1980-01-21 Nec Corp Fine film solar cell and its production method
JPS5640284A (en) * 1979-09-10 1981-04-16 Matsushita Electric Ind Co Ltd Preparation of semiconductor heterojunction element
JPS55151329A (en) * 1979-05-14 1980-11-25 Shunpei Yamazaki Fabricating method of semiconductor device

Also Published As

Publication number Publication date
JPS604273A (ja) 1985-01-10

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