JPH0245344B2 - - Google Patents

Info

Publication number
JPH0245344B2
JPH0245344B2 JP58007666A JP766683A JPH0245344B2 JP H0245344 B2 JPH0245344 B2 JP H0245344B2 JP 58007666 A JP58007666 A JP 58007666A JP 766683 A JP766683 A JP 766683A JP H0245344 B2 JPH0245344 B2 JP H0245344B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
transparent electrode
heat treatment
reading element
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58007666A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59132654A (ja
Inventor
Mario Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58007666A priority Critical patent/JPS59132654A/ja
Publication of JPS59132654A publication Critical patent/JPS59132654A/ja
Publication of JPH0245344B2 publication Critical patent/JPH0245344B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)
JP58007666A 1983-01-20 1983-01-20 長尺薄膜原稿読取素子の製造方法 Granted JPS59132654A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58007666A JPS59132654A (ja) 1983-01-20 1983-01-20 長尺薄膜原稿読取素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58007666A JPS59132654A (ja) 1983-01-20 1983-01-20 長尺薄膜原稿読取素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59132654A JPS59132654A (ja) 1984-07-30
JPH0245344B2 true JPH0245344B2 (enrdf_load_html_response) 1990-10-09

Family

ID=11672125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58007666A Granted JPS59132654A (ja) 1983-01-20 1983-01-20 長尺薄膜原稿読取素子の製造方法

Country Status (1)

Country Link
JP (1) JPS59132654A (enrdf_load_html_response)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635407A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Manufacture of amorphous silicon film
JPS5721875A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor

Also Published As

Publication number Publication date
JPS59132654A (ja) 1984-07-30

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