JPS5635407A - Manufacture of amorphous silicon film - Google Patents

Manufacture of amorphous silicon film

Info

Publication number
JPS5635407A
JPS5635407A JP11020279A JP11020279A JPS5635407A JP S5635407 A JPS5635407 A JP S5635407A JP 11020279 A JP11020279 A JP 11020279A JP 11020279 A JP11020279 A JP 11020279A JP S5635407 A JPS5635407 A JP S5635407A
Authority
JP
Japan
Prior art keywords
film
manufacture
amorphous silicon
sputtering
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11020279A
Other languages
Japanese (ja)
Inventor
Nobuyoshi Takagi
Kiyoshi Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11020279A priority Critical patent/JPS5635407A/en
Publication of JPS5635407A publication Critical patent/JPS5635407A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To manufacture an amorphous silicon film of desired photoconductive properties, by performing electron beam evaporation coating or sputtering to make the film, injecting a prescribed dose of hydrogen ions into the film and then heating it at a prescried temperature. CONSTITUTION:An amorphous film is produced on a glass substrate or the like by electron beam evaporation coating or sputtering. The substrate is then put in an ion injection unit to inject hydrogen ions at the rate of 17X10<17> ions per cm<2> into the film. After that, the film is heated at a temperature of 200-380 deg.C. This results in providing the film with desired photoconductive properties. Elements different in photoconductivity, dark resistivity and wavelength sensitivity can be manufactured in the identical film by accurately controlling the quantity of the hydrogen. Therefore, the film is appropriate to be used as a light sensor, an image sensor or the like.
JP11020279A 1979-08-31 1979-08-31 Manufacture of amorphous silicon film Pending JPS5635407A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11020279A JPS5635407A (en) 1979-08-31 1979-08-31 Manufacture of amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11020279A JPS5635407A (en) 1979-08-31 1979-08-31 Manufacture of amorphous silicon film

Publications (1)

Publication Number Publication Date
JPS5635407A true JPS5635407A (en) 1981-04-08

Family

ID=14529632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11020279A Pending JPS5635407A (en) 1979-08-31 1979-08-31 Manufacture of amorphous silicon film

Country Status (1)

Country Link
JP (1) JPS5635407A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132654A (en) * 1983-01-20 1984-07-30 Fuji Xerox Co Ltd Manufacture of continuous thin film manuscript read-out element
US6921685B2 (en) 2001-04-10 2005-07-26 Nec Lcd Technologies, Ltd. Method of fabricating thin film transistor
USRE39394E1 (en) 1997-11-10 2006-11-14 Aisin Seiki Kabushiki Kaisha Seat apparatus with air flow
JP2007178028A (en) * 2005-12-27 2007-07-12 Takenaka Komuten Co Ltd Ductless seat air conditioning system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132654A (en) * 1983-01-20 1984-07-30 Fuji Xerox Co Ltd Manufacture of continuous thin film manuscript read-out element
JPH0245344B2 (en) * 1983-01-20 1990-10-09 Fuji Xerox Co Ltd
USRE39394E1 (en) 1997-11-10 2006-11-14 Aisin Seiki Kabushiki Kaisha Seat apparatus with air flow
US6921685B2 (en) 2001-04-10 2005-07-26 Nec Lcd Technologies, Ltd. Method of fabricating thin film transistor
JP2007178028A (en) * 2005-12-27 2007-07-12 Takenaka Komuten Co Ltd Ductless seat air conditioning system

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