JPS643525A - Infrared detecting element - Google Patents

Infrared detecting element

Info

Publication number
JPS643525A
JPS643525A JP62159986A JP15998687A JPS643525A JP S643525 A JPS643525 A JP S643525A JP 62159986 A JP62159986 A JP 62159986A JP 15998687 A JP15998687 A JP 15998687A JP S643525 A JPS643525 A JP S643525A
Authority
JP
Japan
Prior art keywords
thin film
rays
high sensitivity
obtd
polarization direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62159986A
Other languages
Japanese (ja)
Inventor
Kenji Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62159986A priority Critical patent/JPS643525A/en
Publication of JPS643525A publication Critical patent/JPS643525A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE:To obtain an element which can be formed at a low temp. and has high sensitivity to IR rays by forming a thin film of Pb5Ge2SiO11 as a pyroelectric material and providing electrodes on a face perpendicular to the polarization direction of the thin film. CONSTITUTION:An Si wafer is used as a thin film substrate 1 and the lower electrode 2 consisting of a thin platinum film is formed by high-frequency sputtering. The thin film 3 is then formed by high-frequency sputtering using Pb5Ge2SiO11 powder as a target. The upper electrode 4 is further formed on the thin film 3 by vapor deposition of a nichrome electrode. After the thin film 3 is subjected to a polarization treatment, the substrate in a photodetecting part is removed by etching to form an aperture 5, by which the IR detecting element is obtd. The element formed in such a manner has the high sensitivity to the detection of the IR rays projected from the polarization direction and the Curie temp. thereof exhibits a high value. The formation of the element at the low temp. is thereby enabled and the element capable of detecting IR rays with the high sensitivity is obtd.
JP62159986A 1987-06-26 1987-06-26 Infrared detecting element Pending JPS643525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62159986A JPS643525A (en) 1987-06-26 1987-06-26 Infrared detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62159986A JPS643525A (en) 1987-06-26 1987-06-26 Infrared detecting element

Publications (1)

Publication Number Publication Date
JPS643525A true JPS643525A (en) 1989-01-09

Family

ID=15705500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62159986A Pending JPS643525A (en) 1987-06-26 1987-06-26 Infrared detecting element

Country Status (1)

Country Link
JP (1) JPS643525A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446284A (en) * 1994-01-25 1995-08-29 Loral Infrared & Imaging Systems, Inc. Monolithic detector array apparatus
US5834776A (en) * 1995-06-07 1998-11-10 Texas Instruments Incorporated Microbolometer cell structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446284A (en) * 1994-01-25 1995-08-29 Loral Infrared & Imaging Systems, Inc. Monolithic detector array apparatus
US5834776A (en) * 1995-06-07 1998-11-10 Texas Instruments Incorporated Microbolometer cell structure

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