JPS643525A - Infrared detecting element - Google Patents
Infrared detecting elementInfo
- Publication number
- JPS643525A JPS643525A JP62159986A JP15998687A JPS643525A JP S643525 A JPS643525 A JP S643525A JP 62159986 A JP62159986 A JP 62159986A JP 15998687 A JP15998687 A JP 15998687A JP S643525 A JPS643525 A JP S643525A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- rays
- high sensitivity
- obtd
- polarization direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
PURPOSE:To obtain an element which can be formed at a low temp. and has high sensitivity to IR rays by forming a thin film of Pb5Ge2SiO11 as a pyroelectric material and providing electrodes on a face perpendicular to the polarization direction of the thin film. CONSTITUTION:An Si wafer is used as a thin film substrate 1 and the lower electrode 2 consisting of a thin platinum film is formed by high-frequency sputtering. The thin film 3 is then formed by high-frequency sputtering using Pb5Ge2SiO11 powder as a target. The upper electrode 4 is further formed on the thin film 3 by vapor deposition of a nichrome electrode. After the thin film 3 is subjected to a polarization treatment, the substrate in a photodetecting part is removed by etching to form an aperture 5, by which the IR detecting element is obtd. The element formed in such a manner has the high sensitivity to the detection of the IR rays projected from the polarization direction and the Curie temp. thereof exhibits a high value. The formation of the element at the low temp. is thereby enabled and the element capable of detecting IR rays with the high sensitivity is obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62159986A JPS643525A (en) | 1987-06-26 | 1987-06-26 | Infrared detecting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62159986A JPS643525A (en) | 1987-06-26 | 1987-06-26 | Infrared detecting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS643525A true JPS643525A (en) | 1989-01-09 |
Family
ID=15705500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62159986A Pending JPS643525A (en) | 1987-06-26 | 1987-06-26 | Infrared detecting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS643525A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5446284A (en) * | 1994-01-25 | 1995-08-29 | Loral Infrared & Imaging Systems, Inc. | Monolithic detector array apparatus |
US5834776A (en) * | 1995-06-07 | 1998-11-10 | Texas Instruments Incorporated | Microbolometer cell structure |
-
1987
- 1987-06-26 JP JP62159986A patent/JPS643525A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5446284A (en) * | 1994-01-25 | 1995-08-29 | Loral Infrared & Imaging Systems, Inc. | Monolithic detector array apparatus |
US5834776A (en) * | 1995-06-07 | 1998-11-10 | Texas Instruments Incorporated | Microbolometer cell structure |
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