JPS5450383A - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JPS5450383A JPS5450383A JP11705877A JP11705877A JPS5450383A JP S5450383 A JPS5450383 A JP S5450383A JP 11705877 A JP11705877 A JP 11705877A JP 11705877 A JP11705877 A JP 11705877A JP S5450383 A JPS5450383 A JP S5450383A
- Authority
- JP
- Japan
- Prior art keywords
- infrared detector
- thin film
- produce
- sides
- metal electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 abstract 3
- 239000002033 PVDF binder Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Abstract
PURPOSE:To provide an infrared detector having a high sensitivity and responsive speed, while eliminating the density treatment, by forming metal electrodes having a sufficiently small preset thickness upon the both sides of a ferroelectric thin film. CONSTITUTION:Metal electrodes 22 and 23 such as a thin film of Ni having a thickness of about 0.01 microns are formed on the both sides of a ferroelectric thin film 21 such as polyvinylidene fluoride (PVF2) thereby to produce an infrared detector element. An amplifier for impedance conversion and a lead-out pin are attached to produce the detector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11705877A JPS5450383A (en) | 1977-09-28 | 1977-09-28 | Infrared detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11705877A JPS5450383A (en) | 1977-09-28 | 1977-09-28 | Infrared detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5450383A true JPS5450383A (en) | 1979-04-20 |
Family
ID=14702376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11705877A Pending JPS5450383A (en) | 1977-09-28 | 1977-09-28 | Infrared detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5450383A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02141833U (en) * | 1981-07-17 | 1990-11-29 | ||
CN102610758A (en) * | 2012-03-19 | 2012-07-25 | 中国科学院上海技术物理研究所 | Ferroelectric tunnel junction room-temperature infrared detector and preparation method |
-
1977
- 1977-09-28 JP JP11705877A patent/JPS5450383A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02141833U (en) * | 1981-07-17 | 1990-11-29 | ||
JPH0511472Y2 (en) * | 1981-07-17 | 1993-03-22 | ||
CN102610758A (en) * | 2012-03-19 | 2012-07-25 | 中国科学院上海技术物理研究所 | Ferroelectric tunnel junction room-temperature infrared detector and preparation method |
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