JPH0469599B2 - - Google Patents

Info

Publication number
JPH0469599B2
JPH0469599B2 JP4567487A JP4567487A JPH0469599B2 JP H0469599 B2 JPH0469599 B2 JP H0469599B2 JP 4567487 A JP4567487 A JP 4567487A JP 4567487 A JP4567487 A JP 4567487A JP H0469599 B2 JPH0469599 B2 JP H0469599B2
Authority
JP
Japan
Prior art keywords
crystal
temperature
bab
phase
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4567487A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63215598A (ja
Inventor
Norio Oonishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP4567487A priority Critical patent/JPS63215598A/ja
Publication of JPS63215598A publication Critical patent/JPS63215598A/ja
Publication of JPH0469599B2 publication Critical patent/JPH0469599B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP4567487A 1987-02-27 1987-02-27 低温相硼酸バリウム単結晶の育成方法 Granted JPS63215598A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4567487A JPS63215598A (ja) 1987-02-27 1987-02-27 低温相硼酸バリウム単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4567487A JPS63215598A (ja) 1987-02-27 1987-02-27 低温相硼酸バリウム単結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS63215598A JPS63215598A (ja) 1988-09-08
JPH0469599B2 true JPH0469599B2 (de) 1992-11-06

Family

ID=12725936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4567487A Granted JPS63215598A (ja) 1987-02-27 1987-02-27 低温相硼酸バリウム単結晶の育成方法

Country Status (1)

Country Link
JP (1) JPS63215598A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH085741B2 (ja) * 1989-04-19 1996-01-24 日本電気株式会社 単結晶育成方法
JP2807282B2 (ja) * 1989-09-22 1998-10-08 住友金属鉱山株式会社 ベータ型メタホウ酸バリウム単結晶の製造方法
US5343827A (en) * 1992-02-19 1994-09-06 Crystal Technology, Inc. Method for crystal growth of beta barium boratean
CN102383182A (zh) * 2011-10-23 2012-03-21 福建福晶科技股份有限公司 一种减少bbo晶体中心包络的熔盐生长法

Also Published As

Publication number Publication date
JPS63215598A (ja) 1988-09-08

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term