JPH0469422B2 - - Google Patents

Info

Publication number
JPH0469422B2
JPH0469422B2 JP58176781A JP17678183A JPH0469422B2 JP H0469422 B2 JPH0469422 B2 JP H0469422B2 JP 58176781 A JP58176781 A JP 58176781A JP 17678183 A JP17678183 A JP 17678183A JP H0469422 B2 JPH0469422 B2 JP H0469422B2
Authority
JP
Japan
Prior art keywords
heat treatment
defect
wafer
density
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58176781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6066827A (ja
Inventor
Yasushi Shimanuki
Hisaaki Suga
Mitsuhiro Kainuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP58176781A priority Critical patent/JPS6066827A/ja
Publication of JPS6066827A publication Critical patent/JPS6066827A/ja
Publication of JPH0469422B2 publication Critical patent/JPH0469422B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58176781A 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法 Granted JPS6066827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58176781A JPS6066827A (ja) 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58176781A JPS6066827A (ja) 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法

Publications (2)

Publication Number Publication Date
JPS6066827A JPS6066827A (ja) 1985-04-17
JPH0469422B2 true JPH0469422B2 (https=) 1992-11-06

Family

ID=16019724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58176781A Granted JPS6066827A (ja) 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法

Country Status (1)

Country Link
JP (1) JPS6066827A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293621A (ja) * 1986-06-12 1987-12-21 Nec Corp 半導体集積回路素子
JPH0750713B2 (ja) * 1990-09-21 1995-05-31 コマツ電子金属株式会社 半導体ウェーハの熱処理方法
JP2006032799A (ja) * 2004-07-20 2006-02-02 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハおよびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435818A1 (fr) * 1978-09-08 1980-04-04 Ibm France Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs

Also Published As

Publication number Publication date
JPS6066827A (ja) 1985-04-17

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