JPH0469410B2 - - Google Patents

Info

Publication number
JPH0469410B2
JPH0469410B2 JP8811483A JP8811483A JPH0469410B2 JP H0469410 B2 JPH0469410 B2 JP H0469410B2 JP 8811483 A JP8811483 A JP 8811483A JP 8811483 A JP8811483 A JP 8811483A JP H0469410 B2 JPH0469410 B2 JP H0469410B2
Authority
JP
Japan
Prior art keywords
film
coating
ray
absorbing member
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8811483A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59213131A (ja
Inventor
Katsuhiro Kawabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58088114A priority Critical patent/JPS59213131A/ja
Publication of JPS59213131A publication Critical patent/JPS59213131A/ja
Publication of JPH0469410B2 publication Critical patent/JPH0469410B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58088114A 1983-05-19 1983-05-19 Ｘ線露光用マスクの製造方法 Granted JPS59213131A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58088114A JPS59213131A (ja) 1983-05-19 1983-05-19 Ｘ線露光用マスクの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58088114A JPS59213131A (ja) 1983-05-19 1983-05-19 Ｘ線露光用マスクの製造方法

Publications (2)

Publication Number Publication Date
JPS59213131A JPS59213131A (ja) 1984-12-03
JPH0469410B2 true JPH0469410B2 (fr) 1992-11-06

Family

ID=13933858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58088114A Granted JPS59213131A (ja) 1983-05-19 1983-05-19 Ｘ線露光用マスクの製造方法

Country Status (1)

Country Link
JP (1) JPS59213131A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715877B2 (ja) * 1985-07-19 1995-02-22 日本電信電話株式会社 Ｘ線マスク
JPS6446927A (en) * 1987-08-18 1989-02-21 Matsushita Electronics Corp Manufacture of x-ray mask
US5051326A (en) * 1989-05-26 1991-09-24 At&T Bell Laboratories X-Ray lithography mask and devices made therewith

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57185437A (en) * 1981-05-11 1982-11-15 Nec Corp Production of x-ray exposure mask
JPS585744A (ja) * 1981-07-02 1983-01-13 Dainippon Ink & Chem Inc 原稿の分類方法と装置並びに電子色分解機のト−ンセツトアツプ方法とそれに使用する装置
JPS5887821A (ja) * 1981-11-20 1983-05-25 Toshiba Corp Ｘ線露光用マスクの製造方法
JPS5890729A (ja) * 1981-11-25 1983-05-30 Nec Corp Ｘ線マスク製作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57185437A (en) * 1981-05-11 1982-11-15 Nec Corp Production of x-ray exposure mask
JPS585744A (ja) * 1981-07-02 1983-01-13 Dainippon Ink & Chem Inc 原稿の分類方法と装置並びに電子色分解機のト−ンセツトアツプ方法とそれに使用する装置
JPS5887821A (ja) * 1981-11-20 1983-05-25 Toshiba Corp Ｘ線露光用マスクの製造方法
JPS5890729A (ja) * 1981-11-25 1983-05-30 Nec Corp Ｘ線マスク製作方法

Also Published As

Publication number Publication date
JPS59213131A (ja) 1984-12-03

Similar Documents

Publication Publication Date Title
US5580615A (en) Method of forming a conductive film on an insulating region of a substrate
JPH0469410B2 (fr)
EP0103844B1 (fr) Masque pour rayons-X
JPH05216216A (ja) ステンシルマスク形成方法
JP2904145B2 (ja) 荷電ビーム描画装置用アパチャおよびその製造方法
JP3226250B2 (ja) 転写マスク
JP3297996B2 (ja) Ｘ線マスク及びその製造方法
JP2874683B2 (ja) 電子ビ−ム装置用マスク及びその製造方法
JP2762104B2 (ja) Ｘ線露光用マスクの製造方法
JPH0312452B2 (fr)
JPH0744147B2 (ja) アスペクト比の高い吸収体パターンを含む解像力の高いｘ線マスク
JP3280074B2 (ja) Ｘ線マスク製造方法
JPS5923104B2 (ja) 軟ｘ線露光用マスクの製造方法
JPH11119431A (ja) 金属パターンの形成方法
JPS60120526A (ja) 微細パタン形成法
JP3114286B2 (ja) Ｘ線露光用マスク及びそれの製造方法
JP2771542B2 (ja) 露光用マスクの製造方法
JPS5934632A (ja) Ｘ線マスクの製造方法
JPS62250655A (ja) 半導体装置およびその製造方法
JPH02138722A (ja) Ｘ線リソグラフィ用マスクの製造方法
JPS62106626A (ja) 露光マスクの製造方法
JPS5989422A (ja) Ｘ線マスクの製造方法
JPH07283113A (ja) アパーチャ及びその製造方法
JPS61245162A (ja) Ｘ線マスク
JPS6084817A (ja) Ｓｏｒ光露光用マスク