JPH0467336B2 - - Google Patents
Info
- Publication number
- JPH0467336B2 JPH0467336B2 JP55084885A JP8488580A JPH0467336B2 JP H0467336 B2 JPH0467336 B2 JP H0467336B2 JP 55084885 A JP55084885 A JP 55084885A JP 8488580 A JP8488580 A JP 8488580A JP H0467336 B2 JPH0467336 B2 JP H0467336B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal semiconductor
- single crystal
- semiconductor layer
- insulating film
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
- H01L29/78657—SOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8488580A JPS5710267A (en) | 1980-06-23 | 1980-06-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8488580A JPS5710267A (en) | 1980-06-23 | 1980-06-23 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5710267A JPS5710267A (en) | 1982-01-19 |
| JPH0467336B2 true JPH0467336B2 (fr) | 1992-10-28 |
Family
ID=13843210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8488580A Granted JPS5710267A (en) | 1980-06-23 | 1980-06-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710267A (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58153850A (ja) * | 1982-03-08 | 1983-09-13 | 極東鋼弦コンクリ−ト振興株式会社 | リング状ｐｃ鋼材の緊張・定着用ブロツク |
| US5753542A (en) * | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
| US5962869A (en) * | 1988-09-28 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
| US5264720A (en) * | 1989-09-22 | 1993-11-23 | Nippondenso Co., Ltd. | High withstanding voltage transistor |
| JPH06151859A (ja) * | 1992-09-15 | 1994-05-31 | Canon Inc | 半導体装置 |
| JP2891325B2 (ja) * | 1994-09-01 | 1999-05-17 | 日本電気株式会社 | Ｓｏｉ型半導体装置およびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513947A (en) * | 1978-07-17 | 1980-01-31 | Seiko Epson Corp | Semiconductor integrated circuit device |
-
1980
- 1980-06-23 JP JP8488580A patent/JPS5710267A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513947A (en) * | 1978-07-17 | 1980-01-31 | Seiko Epson Corp | Semiconductor integrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5710267A (en) | 1982-01-19 |
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