JPH0465534B2 - - Google Patents
Info
- Publication number
- JPH0465534B2 JPH0465534B2 JP62130595A JP13059587A JPH0465534B2 JP H0465534 B2 JPH0465534 B2 JP H0465534B2 JP 62130595 A JP62130595 A JP 62130595A JP 13059587 A JP13059587 A JP 13059587A JP H0465534 B2 JPH0465534 B2 JP H0465534B2
- Authority
- JP
- Japan
- Prior art keywords
- ball
- wire
- alloy wire
- alloy
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000956 alloy Substances 0.000 claims description 40
- 229910045601 alloy Inorganic materials 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 32
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 238000007712 rapid solidification Methods 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 229910052745 lead Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 8
- 239000006104 solid solution Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 239000010953 base metal Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910020658 PbSn Inorganic materials 0.000 description 2
- 101150071746 Pbsn gene Proteins 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005482 strain hardening Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62130595A JPS63301535A (ja) | 1987-01-30 | 1987-05-27 | 半導体材料の接続方法及びそれに用いる接続材料 |
GB8800518A GB2201545B (en) | 1987-01-30 | 1988-01-11 | Method for connecting semiconductor material |
US07/970,232 US5384090A (en) | 1987-01-30 | 1992-10-30 | Fine wire for forming bump electrodes using a wire bonder |
US08/315,575 US5514334A (en) | 1987-01-30 | 1994-09-30 | Fine lead alloy wire for forming bump electrodes |
US08/315,577 US5514912A (en) | 1987-01-30 | 1994-09-30 | Method for connecting semiconductor material and semiconductor device used in connecting method |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2120287 | 1987-01-30 | ||
JP62-21202 | 1987-01-30 | ||
JP62130595A JPS63301535A (ja) | 1987-01-30 | 1987-05-27 | 半導体材料の接続方法及びそれに用いる接続材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63301535A JPS63301535A (ja) | 1988-12-08 |
JPH0465534B2 true JPH0465534B2 (zh) | 1992-10-20 |
Family
ID=26358236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62130595A Granted JPS63301535A (ja) | 1987-01-30 | 1987-05-27 | 半導体材料の接続方法及びそれに用いる接続材料 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63301535A (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2891432B2 (ja) * | 1989-12-27 | 1999-05-17 | 田中電子工業株式会社 | 半導体材料の接続方法,それに用いる接続材料及び半導体装置 |
JPH04299544A (ja) * | 1991-03-28 | 1992-10-22 | Nec Corp | フィルムキャリヤ半導体装置の製造方法 |
-
1987
- 1987-05-27 JP JP62130595A patent/JPS63301535A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63301535A (ja) | 1988-12-08 |
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