JPH0464174B2 - - Google Patents

Info

Publication number
JPH0464174B2
JPH0464174B2 JP59000603A JP60384A JPH0464174B2 JP H0464174 B2 JPH0464174 B2 JP H0464174B2 JP 59000603 A JP59000603 A JP 59000603A JP 60384 A JP60384 A JP 60384A JP H0464174 B2 JPH0464174 B2 JP H0464174B2
Authority
JP
Japan
Prior art keywords
solution
growth
supersaturation
degree
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59000603A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60144933A (ja
Inventor
Yasuo Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59000603A priority Critical patent/JPS60144933A/ja
Publication of JPS60144933A publication Critical patent/JPS60144933A/ja
Publication of JPH0464174B2 publication Critical patent/JPH0464174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2907Materials being Group IIIA-VA materials
    • H10P14/2909Phosphides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP59000603A 1984-01-06 1984-01-06 液相成長装置 Granted JPS60144933A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59000603A JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59000603A JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Publications (2)

Publication Number Publication Date
JPS60144933A JPS60144933A (ja) 1985-07-31
JPH0464174B2 true JPH0464174B2 (enExample) 1992-10-14

Family

ID=11478305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59000603A Granted JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Country Status (1)

Country Link
JP (1) JPS60144933A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1363006A (en) * 1971-09-21 1974-08-14 Morgan Refractories Ltd Cermet articles

Also Published As

Publication number Publication date
JPS60144933A (ja) 1985-07-31

Similar Documents

Publication Publication Date Title
US3809584A (en) Method for continuously growing epitaxial layers of semiconductors from liquid phase
JP2743377B2 (ja) 半導体薄膜の製造方法
JPS6255688B2 (enExample)
JPH0464174B2 (enExample)
JPH0217519B2 (enExample)
US4692194A (en) Method of performing solution growth of a GaAs compound semiconductor crystal layer under control of conductivity type thereof
JPS61181124A (ja) 液相成長方法
van Oirschot et al. LPE growth of DH laser structures with the double source method
JPS63164309A (ja) 液相成長方法
EP0742582A2 (en) Doping procedure for semiconductor growth processes
JPS598698A (ja) 縦型液相エピタキシヤル成長装置
JPH065428Y2 (ja) 液相エピタキシャル成長用溶媒金属
JP2810175B2 (ja) 気相成長方法
JPH035054B2 (enExample)
JPH01305892A (ja) Si分子線源
JPS6028799B2 (ja) 液相エピタキシヤル成長方法
JPS6066423A (ja) 液相エピタキシャル成長方法
JPS57155727A (en) Manufacture of semiconductor device
JP2773339B2 (ja) 液相エピタキシャル成長方法
JPH0361636B2 (enExample)
JPS63119227A (ja) 液相成長方法
JPH01246193A (ja) 液相エピタキシャル成長装置
JPH0697098A (ja) 半導体結晶の成長方法
JPS60192339A (ja) 液相エピタキシヤル成長方法
JPS59225518A (ja) 液相エピタキシヤル成長方法